Aaron Voon-Yew Thean

Opportunities and Challenges of Multiscale Heterogeneous Material Integration on Si Platforms for Enhanced Functionality and Performance

Abstract With the growing need to pack more functionality into a smaller form factor while providing significant power-performance benefits, future electronics will need fairly disruptive solutions to overcome the mounting limits of Si CMOS scaling. At the core of the hardware innovations will be new process technologies that allow for not only more power-efficient CMOS transistors but also specialized devices to enable new on-chip functionality, for example, sensors, high-speed I/O, optoelectronics, power management, and RF.

A surface potential based compact model for two-dimensional field effect transistors with disorders induced transition behaviors

A surface potential based compact model for two-dimensional field effect transistors (2D-FETs) is proposed to incorporate the structural disorders induced transition behaviors among variable range hopping (VRH), nearest neighbor hopping (NNH), and band-like transport in most 2D materials. These functions coupled with effective transport energy and multiple trapping and releasing theory enable our developed model to predict the temperature and carrier density dependent current characteristics. Its validity is confirmed by the experimental results such as the metal insulator transition (MIT) in transition metal dichalcogenides and VRH-NNH transition in black phosphorus nanoribbon. Based on this model, the band-tail effects on the crossover gate voltage of MIT behavior are quantitatively investigated. It is found that the transition behavior is closely related to the distribution of the band-tail states. Furthermore, this model is implemented in Verilog-A for circuit-level prediction and evaluation of 2D-FETs to provide deeper insight into the relationship between material properties, device physics, and circuit performances.A surface potential based compact model for two-dimensional field effect transistors (2D-FETs) is proposed to incorporate the structural disorders induced transition behaviors among variable range hopping (VRH), nearest neighbor hopping (NNH), and band-like transport in most 2D materials. These functions coupled with effective transport energy and multiple trapping and releasing theory enable our developed model to predict the temperature and carrier density dependent current characteristics. Its validity is confirmed by the experimental results such as the metal insulator transition (MIT) in transition metal dichalcogenides and VRH-NNH transition in black phosphorus nanoribbon. Based on this model, the band-tail effects on the crossover gate voltage of MIT behavior are quantitatively investigated. It is found that the transition behavior is closely related to the distribution of the band-tail states. Furthermore, this model is implemented in Verilog-A for circuit-level prediction and evaluation of 2D-FET...

Percolation theory based statistical resistance model for resistive random access memory

A comprehensive understanding of the disorder-induced transport characteristics in resistive random-access memory (RRAM) is critical for its thermal stability analysis and analog switching for the coming neuromorphic computing application. Superior to the previous transport mechanisms which are only valid within their respective ranges of temperatures, we propose a unified physics-based model that can accurately predict the transport dependence on all temperature ranges up to 300 K. By utilizing percolation theory and the Fermi Golden Rule, the probability distributions for both the tunnel junction energy barrier and gap distance based statistical resistance model are described. It is found that different programming cycles and resistance states contribute to transition behavior between various low-temperature transport mechanisms. Moreover, the model can also investigate the dependence of electrical characteristics on defect generation like radiation damage. Therefore, it quantitatively relates the therm...

An Analytical Model of MOS Admittance for Border Trap Density Extraction in High-

In this paper, we have developed a straightforward MOS admittance-based technique for defect density extraction, utilizing analytical equations for MOS capacitors with border traps (BTs). We show that these equations can provide an efficient technique to obtain the BT density directly from the measured data without any requirement of numerically involved techniques. This is demonstrated by applying the methodology on measured C-V data from Al2O3- and HfO2-based MOSCAPs. The extracted densities show less than 5% difference from the values extracted using the fitting-based methodology used in previous reports. We show that, due to the analytical nature of these equations, they can be used to understand the impact of each defect parameter on the admittance. We extensively prove the applicability of the analytical solution for a very wide range of parameter values. In addition, we lay out a methodology for defect density extraction, which can be easily automated for the characterization of large scale data sets of high-k dielectrics on III-V MOS devices.