Ahad Syed

Electron-beam lithography of gold nanostructures for surface-enhanced Raman scattering

The fabrication of nanostructured substrates with precisely controlled geometries and arrangements plays an important role in studies of surface-enhanced Raman scattering (SERS). Here, we present two processes based on electron-beam lithography to fabricate gold nanostructures for SERS. One process involves making use of metal lift-off and the other involves the use of the plasma etching. These two processes allow the successful fabrication of gold nanostructures with various kinds of geometrical shapes and different periodic arrangements. 4-mercaptopyridine (4-MPy) and Rhodamine 6G (R6G) molecules are used to probe SERS signals on the nanostructures. The SERS investigations on the nanostructured substrates demonstrate that the gold nanostructured substrates have resulted in large SERS enhancement, which is highly dependent on the geometrical shapes and arrangements of the gold nanostructures.

Improved surface-enhanced Raman scattering on arrays of gold quasi-3D nanoholes

Arrays of gold quasi-3D nanoholes were proposed and fabricated as substrates for surface-enhanced Raman scattering (SERS). By detecting rhodamine 6G (R6G) molecules, the gold quasi-3D nanoholes demonstrated an SERS intensity that was 25–62 times higher than that of two-dimensional nanoholes with the same geometrical shapes and periodicities. The larger SERS enhancement of the quasi-3D nanoholes is attributed to the enhanced electromagnetic field on the top-layer nanohole, the bottom nanodiscs and the field coupling between the two layers. In addition, the investigation of the shape dependence of the SERS on the quasi-3D nanoholes demonstrated that the quadratic, circular, triangular and rhombic holes exhibited different SERS properties. Numerical simulations of the electromagnetic properties on the nanostructures were performed with CST Microwave Studio, and the results agree with the experimental observations. (Some figures may appear in colour only in the online journal)

Red to Near-Infrared Emission from InGaN/GaN Quantum-Disks-in-Nanowires LED

The InGaN/GaN quantum-disks-in-nanowire light-emitting diode (LED) with emission centered at ∼830nm, the longest emission wavelength ever reported in the InGaN/GaN system, and spectral linewidth of 290nm, has been fabricated with p-side-down on a Cu substrate.

Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.

Gain-Enhanced On-Chip Folded Dipole Antenna Utilizing Artificial Magnetic Conductor at 94 GHz

On-chip antennas suffer from low gain values and distorted radiation patterns due to the lossy and high permittivity Si substrate. An ideal solution would be to isolate the lossy Si substrate from the antenna through a perfect electric conductor ground plane. However, the typical CMOS stack up that has multiple metal layers embedded in a thin oxide layer does not permit this. In this letter, an artificial magnetic conductor (AMC) reflecting surface has been utilized to isolate the Si substrate from the antenna. Contrary to the previous reports, the AMC structure is completely embedded in the thin oxide layer with the ground plane above the Si substrate. In this approach, the AMC surface acts for the first time as both a reflector and a silicon shield. As a result, the antenna radiation pattern is not distorted and its gain is improved by 8 dB. The fabricated prototype demonstrates good impedance and radiation characteristics.

A planar and tunable bandpass filter on a ferrite substrate with integrated windings

Tunable Filters that are based on ferrite materials are often biased by external magnets or coils which are large and bulky. In this work a completely planar, CPW-based bandpass filter is presented with integrated windings. Due to these windings the size of the filter is only 26mm × 34mm × 0.38mm which is orders of magnitude smaller than the traditional designs with external windings. The filter is realized by electroplating of Copper over seed layers of Titanium and Gold over a YIG substrate. The fabricated filter achieves a tunability of 3.4% without any external magnets or coils. A good insertion loss of 2.3 dBs and rejection greater than 50 dBs have been obtained. To the best of the authors knowledge, this design is the first ferrite-based design that is completely planar and self-biased.

Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.

Raman study of localized recrystallization of amorphous silicon induced by laser beam

The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter.