Ahmed Maarouf

Carbon nanotube thin film transistors on flexible substrates

Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 μA/μm) and on-off ratios (∼105) with mobility values ranging from 10-35 cm2/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity.

Low-Energy Coherent Transport in Metallic Carbon Nanotube Junctions

We study the low-energy electronic properties of a junction made of two crossed metallic carbon nanotubes of general chiralities. We derive a tight binding tunneling matrix element that couples low-energy states on the two tubes, which allows us to calculate the contact conductance of the junction. We find that the intrinsic asymmetries of the junction cause the forward and backward hopping probabilities from one tube to another to be different. This defines a zero-field Hall conductance for the junction, which we find to scale inversely with the junction contact conductance. Through a systematic study of the dependence of the junction conductance on different junction parameters, we find that the crossing angle is the dominant factor which determines the magnitude of the conductance.

Crown Graphene Nanomeshes: Highly Stable Chelation-Doped Semiconducting Materials

Graphene nanomeshes (GNMs) formed by the creation of pore superlattices in graphene are a possible route to graphene-based electronics due to their semiconducting properties, including the emergence of fractional electronvolt band gaps. The utility of GNMs would be markedly increased if a scheme to stably and controllably dope them was developed. In this work, a chemically motivated approach to GNM doping based on selective pore-perimeter passivation and subsequent ion chelation is proposed. It is shown by first-principles calculations that ion chelation leads to stable doping of the passivated GNMs-both n- and p-doping are achieved within a rigid-band picture. Such chelated or crown GNM structures are stable, high mobility semiconducting materials possessing intrinsic doping-concentration control; these can serve as building blocks for edge-free graphene nanoelectronics including GNM-based complementary metal oxide semiconductor (CMOS)-type logic switches.