Ahmet Faruk Özdemir

The double Gaussian distribution of barrier heights in Au/n-GaAs schottky diodes from I-V-T characteristics

The current?voltage (I?V) and capacitance?voltage (C?V) characteristics of Au/n-GaAs contacts have been measured in the temperature range of 80?300 K. An abnormal decrease in the experimental BH ?b and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been attributed to the barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the metal?semiconductor interface. The temperature-dependent I?V characteristics of the Au/n-GaAs contact have shown a double Gaussian distribution giving mean barrier heights of 0.967 and 0.710 eV and standard deviations of 0.105 and 0.071 V, respectively. A modified ln(I0/T2) ? q2?2s/2k2T2 versus 1/T plot for the two temperature regions then gives and A* as 0.976 and 0.703 eV, and 13.376 and 8.110 A cm?2 K?2, respectively. Furthermore, a value of ?0.674 meV K?1 for the temperature coefficient has been obtained, and the value of ?0.674 meV K?1 for the Au/n-GaAs Schottky diode is in close agreement with those in the literature.

A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

Three different thicknesses (50, 150 and 500 nm) Zn-doped polyvinyl alcohol (PVA) was deposited on n-4H-SiC wafer as interlayer by electrospinning method and so, Au/(Zn-doped PVA)/n-4H-SiC metal–polymer–semiconductor structures were fabricated. The thickness effect of Zn-doped PVA on the dielectric constant (

Electrical properties of Al/conducting polymer (P2ClAn)/p-Si/Al contacts

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Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

ε′), dielectric loss (

Analysis of current–voltage and capacitance–voltage-frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer

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The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure

ε′′), loss-tangent (tan