Ali Kökce

Solution of the inverse electromagnetic problem of spontaneous potential (SP) by very fast simulated reannealing (VFSR)

Very Fast Simulated Reannealing (VFSR) is applied to the solution of an inverse electromagnetic problem. The problem is to model the distribution of dipole current sources in a finitely resistive infinite half space. Modelling is done using the observed electrical potential on the interface between the half space and the free space. This method is known as Spontaneous Potential (SP) and is widely used for geophysical prospecting. Object of the VFSR algorithm is a quadratic error function between measured and synthetic data. Method is tested on a field data.

Time-dependent quantum study of three-dimensional inelastic scattering of I-H2

Abstract We have calculated the state-to-state inelastic scattering probabilities for three-dimensional inelastic scattering of I+H2(v,j)→I+H2(v′,j′) at zero total angular momentum. The state-to-state probabilities show broad oscillations with some large resonances imposed on them. The total reaction probability which is unity in the low energy region drops down in the high energy region where the H2 molecule tends to dissociate.

A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods

Three different thicknesses (50, 150 and 500 nm) Zn-doped polyvinyl alcohol (PVA) was deposited on n-4H-SiC wafer as interlayer by electrospinning method and so, Au/(Zn-doped PVA)/n-4H-SiC metal–polymer–semiconductor structures were fabricated. The thickness effect of Zn-doped PVA on the dielectric constant (

Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts

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Temperature dependent ideality factor and barrier height of Ni/n-GaAs/In Schottky diodes

ε′), dielectric loss (

Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room temperature

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