Ajaya K. Sigdel

Low-temperature, solution-processed molybdenum oxide hole-collection layer for organic photovoltaics

We have utilized a commercially available metal–organic precursor to develop a new, low-temperature, solution-processed molybdenum oxide (MoOx) hole-collection layer (HCL) for organic photovoltaic (OPV) devices that is compatible with high-throughput roll-to-roll manufacturing. Thermogravimetric analysis indicates complete decomposition of the metal–organic precursor by 115 °C in air. Acetonitrile solutions spin-cast in a N2 atmosphere and annealed in air yield continuous thin films of MoOx. Ultraviolet, inverse, and X-ray photoemission spectroscopies confirm the formation of MoOx and, along with Kelvin probe measurements, provide detailed information about the energetics of the MoOx thin films. Incorporation of these films into conventional architecture bulk heterojunction OPV devices with poly(3-hexylthiophene) and [6,6]-phenyl-C61 butyric acid methyl ester afford comparable power conversion efficiencies to those obtained with the industry-standard material for hole injection and collection: poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). The MoOx HCL devices exhibit slightly reduced open circuit voltages and short circuit current densities with respect to the PEDOT:PSS HCL devices, likely due in part to charge recombination at Mo5+ gap states in the MoOx HCL, and demonstrate enhanced fill factors due to reduced series resistance in the MoOx HCL.

Orientation of phenylphosphonic acid self-assembled monolayers on a transparent conductive oxide: a combined NEXAFS, PM-IRRAS, and DFT study.

Self-assembled monolayers (SAMs) of dipolar phosphonic acids can tailor the interface between organic semiconductors and transparent conductive oxides. When used in optoelectronic devices such as organic light emitting diodes and solar cells, these SAMs can increase current density and photovoltaic performance. The molecular ordering and conformation adopted by the SAMs determine properties such as work function and wettability at these critical interfaces. We combine angle-dependent near-edge X-ray absorption fine structure (NEXAFS) spectroscopy and polarization modulation infrared reflection absorption spectroscopy (PM-IRRAS) to determine the molecular orientations of a model phenylphosphonic acid on indium zinc oxide, and correlate the resulting values with density functional theory (DFT). We find that the SAMs are surprisingly well-oriented, with the phenyl ring adopting a well-defined tilt angle of 12-16° from the surface normal. We find quantitative agreement between the two experimental techniques and density functional theory calculations. These results not only provide a detailed picture of the molecular structure of a technologically important class of SAMs, but also resolve a long-standing ambiguity regarding the vibrational-mode assignments for phosphonic acids on oxide surfaces, thus improving the utility of PM-IRRAS for future studies.

Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating

We report a rapid method of depositing phosphonic acid molecular groups onto conductive metal oxide surfaces. Solutions of pentafluorobenzyl phosphonic acid (PFBPA) were deposited on indium tin oxide, indium zinc oxide, nickel oxide, and zinc oxide by spray coating substrates heated to temperatures between 25 and 150 °C using a 60 s exposure time. Comparisons of coverage and changes in work function were made to the more conventional dip-coating method utilizing a 1 h exposure time. The data show that the work function shifts and surface coverage by the phosphonic acid were similar to or greater than those obtained by the dip-coating method. When the deposition temperature was increased, the magnitude of the surface coverage and work function shift was also found to increase. The rapid exposure of the spray coating was found to result in less etching of zinc-containing oxides than the dip-coating method. Bulk heterojunction solar cells made of polyhexylthiophene (P3HT) and bis-indene-C60 (ICBA) were tested with PFBPA dip and spray-modified ITO substrates as well as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS)-modified ITO. The spray-modified ITO solar cells showed a similar open circuit voltage (VOC) and fill factor (FF) and a less than 5% lower short circuit current density (JSC) and power conversion efficiency (PCE) than the dip- and PEDOT:PSS-modified ITO. These results demonstrate a potential path to a scalable method to deposit phosphonic acid surface modifiers on metal oxides while overcoming the limitations of other techniques that require long exposure and post-processing times.

Defect‐Driven Interfacial Electronic Structures at an Organic/Metal‐Oxide Semiconductor Heterojunction

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

Development and application of an instrument for spatially resolved Seebeck coefficient measurements.

The Seebeck coefficient is a key indicator of the majority carrier type (electrons or holes) in a material. The recent trend toward the development of combinatorial materials research methods has necessitated the development of a new high-throughput approach to measuring the Seebeck coefficient at spatially distinct points across any sample. The overall strategy of the high-throughput experiments is to quickly identify the region of interest on the sample at some expense of accuracy, and then study this region by more conventional techniques. The instrument for spatially resolved Seebeck coefficient measurements reported here relies on establishing a temperature difference across the entire compositionally graded thin-film and consecutive mapping of the resulting voltage as a function of position, which facilitates the temperature-dependent measurements up to 400 °C. The results of the designed instrument are verified at ambient temperature to be repeatable over 10 identical samples and accurate to within 10% versus conventional Seebeck coefficient measurements over the -100 to +150 μV/K range using both n-type and p-type conductive oxides as test cases. The developed instrument was used to determine the sign of electrical carriers of compositionally graded Zn-Co-O and Ni-Co-O libraries prepared by combinatorial sputtering. As a result of this study, both cobalt-based materials were determined to have p-type conduction over a broad single-phase region of chemical compositions and small variation of the Seebeck coefficient over the entire investigated range of compositions and temperature.

Surface Treatment of NiO Hole Transport Layers for Organic Solar Cells

Recent advances in the power-conversion efficiency of organic photovoltaics (OPVs) has largely been realized through the development of conjugated polymer absorber materials that provide for increased overlap with the solar spectrum as well as proper energy level offset with the electron acceptor. These allow for increased photocurrent and photovoltage, thus resulting in increased performance. Such systems could further be improved through the application of contact materials that have been tuned to minimize losses in carrier and potential losses at the charge-extraction interfaces. To date, these devices continue to use contacts that have not been optimized for the specific active layer components employed. Here, we demonstrate that the electrical and contact properties of NiO can be tuned through careful control of the deposition parameters as well as through surface treatments. The effects of the NiO thin-film processing and properties are investigated for application as a hole transport layer (HTL) in poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester OPV devices. Devices based on the NiO HTLs demonstrate equal performance to those employing poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) HTLs. Furthermore, the NiO HTLs enable the application of zinc-oxide-based materials as transparent electrodes.

Nickel oxide interlayer films from nickel formate–ethylenediamine precursor: influence of annealing on thin film properties and photovoltaic device performance

An organometallic ink based on the nickel formate–ethylenediamine (Ni(O2CH)2(en)2) complex forms high performance NiOx thin film hole transport layers (HTL) in organic photovoltaic (OPV) devices. Improved understanding of these HTLs functionality can be gained from temperature-dependent decomposition/oxidation chemistries during film formation and corresponding chemical structure-function relationships for energetics, charge selectivity, and transport in photovoltaic platforms. Investigations of as-cast films annealed in air (at 150 °C–350 °C), with and without subsequent O2-plasma treatment, were performed using thermogravimetric analysis, Fourier transform infrared spectroscopy, ultraviolet and X-ray photoelectron spectroscopy, and spectroscopic ellipsometry to elucidate the decomposition and oxidation of the complex to NiOx. Regardless of the anneal temperature, after exposure to O2-plasma, these HTLs exhibit work functions greater than the ionization potential of a prototype donor polymer poly(N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole) (PCDTBT), thereby meeting a primary requirement of energy level alignment. Thus, bulk-heterojunction (BHJ), OPV solar cells made on this series of NiOx HTLs all exhibit similar open circuit voltages (Voc). In contrast, the short circuit currents increase significantly from 1.7 to 11.2 mA cm−2 upon increasing the anneal temperature from 150 °C to 250 °C. Concomitantly, increased conductivity and electrical homogeneity of NiOx thin films are observed at the nanoscale using conductive tip-AFM. Similar Voc observed for all the O2-plasma treated NiOx interlayers and variations to nanoscale conductivity suggest that the HTLs all form charge selective contacts and that their carrier extraction efficiency is determined by the amount of precursor conversion to NiOx. The separation of these two properties: selectivity and conductivity, sheds further light on charge selective interlayer functionality.

PM-IRRAS Determination of Molecular Orientation of Phosphonic Acid Self-Assembled Monolayers on Indium Zinc Oxide

Self-assembled monolayers (SAMs) of phosphonic acids (PAs) on transparent conductive oxide (TCO) surfaces can facilitate improvement in TCO/organic semiconductor interface properties. When ordered PA SAMs are formed on oxide substrates, interface dipole and electronic structure are affected by the functional group properties, orientation, and binding modes of the modifiers. Choosing octylphosphonic acid (OPA), F13-octylphosphonic acid (F13OPA), pentafluorophenyl phosphonic acid (F5PPA), benzyl phosphonic acid (BnPA), and pentafluorobenzyl phosphonic acid (F5BnPA) as a representative group of modifiers, we report polarization modulation-infrared reflection-absorption spectroscopy (PM-IRRAS) of binding and molecular orientation on indium-doped zinc oxide (IZO) substrates. Considerable variability in molecular orientation and binding type is observed with changes in PA functional group. OPA exhibits partially disordered alkyl chains but on average the chain axis is tilted ∼57° from the surface normal. F13OPA tilts 26° with mostly tridentate binding. The F5PPA ring is tilted 23° from the surface normal with a mixture of bidentate and tridentate binding; the BnPA ring tilts 31° from normal with a mixture of bidentate and tridentate binding, and the F5BnPA ring tilts 58° from normal with a majority of bidentate with some tridenate binding. These trends are consistent with what has been observed previously for the effects of fluorination on orientation of phosphonic acid modifiers. These results from PM-IRRAS are correlated with recent results on similar systems from near-edge X-ray absorption fine structure (NEXAFS) and density functional theory (DFT) calculations. Overall, these results indicate that both surface binding geometry and intermolecular interactions play important roles in dictating the orientation of PA modifiers on TCO surfaces. This work also establishes PM-IRRAS as a routine method for SAM orientation determination on complex oxide substrates.

Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films

The utilization of radio-frequency (RF) superimposed direct-current (DC) magnetron sputtering deposition on the properties of gallium doped ZnO (GZO) based transparent conducting oxides has been examined. The GZO films were deposited using 76.2 mm diameter ZnO:Ga2O3 (5 at. % Ga vs. Zn) ceramic oxide target on heated non-alkaline glass substrates by varying total power from 60 W to 120 W in steps of 20 W and at various power ratios of RF to DC changing from 0 to 1 in steps of 0.25. The GZO thin films grown with pure DC, mixed approach, and pure RF resulted in conductivities of 2200 ± 200 S/cm, 3920 ± 600 S/cm, and 3610 ± 400 S/cm, respectively. X-ray diffraction showed all films have wurtzite ZnO structure with the c-axis oriented perpendicular to the substrate. The films grown with increasing RF portion of the total power resulted in the improvement of crystallographic texture with smaller full-width half maximum in χ and broadening of optical gap with increased carrier concentration via more efficient do...

Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface

Despite significant interest in hybrid organic/inorganic semiconductor interfaces, little is known regarding the fate of charge carriers at metal oxide interfaces, particularly on ultrafast time scales. Using core-hole clock spectroscopy, we investigate the ultrafast charge carrier dynamics of conductive ZnO films at a hybrid interface with an organic semiconductor. The adsorption of C60 on the ZnO surface strongly suppresses the ultrafast carrier delocalization and increases the charge carrier residence time from 400 attoseconds to nearly 30 fs. Here, we show that a new hybridized interfacial density of states with substantial molecular character is formed, fundamentally altering the observed carrier dynamics. The remarkable change in the dynamics sheds light on the fate of carriers at hybrid organic/inorganic semiconductor interfaces relevant to organic optoelectronics and provides for the first time an atomistic picture of the electronically perturbed near-interface region of a metal oxide.