Paul F. Ndione

Low-temperature, solution-processed molybdenum oxide hole-collection layer for organic photovoltaics

We have utilized a commercially available metal–organic precursor to develop a new, low-temperature, solution-processed molybdenum oxide (MoOx) hole-collection layer (HCL) for organic photovoltaic (OPV) devices that is compatible with high-throughput roll-to-roll manufacturing. Thermogravimetric analysis indicates complete decomposition of the metal–organic precursor by 115 °C in air. Acetonitrile solutions spin-cast in a N2 atmosphere and annealed in air yield continuous thin films of MoOx. Ultraviolet, inverse, and X-ray photoemission spectroscopies confirm the formation of MoOx and, along with Kelvin probe measurements, provide detailed information about the energetics of the MoOx thin films. Incorporation of these films into conventional architecture bulk heterojunction OPV devices with poly(3-hexylthiophene) and [6,6]-phenyl-C61 butyric acid methyl ester afford comparable power conversion efficiencies to those obtained with the industry-standard material for hole injection and collection: poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). The MoOx HCL devices exhibit slightly reduced open circuit voltages and short circuit current densities with respect to the PEDOT:PSS HCL devices, likely due in part to charge recombination at Mo5+ gap states in the MoOx HCL, and demonstrate enhanced fill factors due to reduced series resistance in the MoOx HCL.

Stability of inverted organic solar cells with ZnO contact layers deposited from precursor solutions

We report on investigations of the stability of inverted organic solar cells with ZnO electron collecting interlayer that are solution-processed from zinc acetate (ZnAc) or diethylzinc (deZn) precursors. Characterization of the respective solar cells suggests that the two materials initially function similarly in devices, however, we find that devices with ZnO from the deZn precursor are more stable under long-term illumination and load than devices with ZnO from the ZnAc precursor. A dipolar phosphonic acid that reduces the ZnO work function also improved device performance and stability when compared with unmodified ZnAc-based ZnO, but was problematic for deZn-based ZnO. The long-term device degradation analyses shows that the improved devices had increased and significantly more stable open-circuit voltage and fill factor characteristics. Chemical analyses suggests that defects in the ZnO films, most likely interstitial zinc, may be responsible for the observed disparities in stability within organic solar cells.

Defect‐Driven Interfacial Electronic Structures at an Organic/Metal‐Oxide Semiconductor Heterojunction

The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.

Metal-Insulator-Metal Diodes: Role of the Insulator Layer on the Rectification Performance

Metal–Insulator–Metal (MIM) diodes are actively investigated as high-frequency rectifi ers [ 2 , 4 , 15–18 ] for these applications, complemented by other related devices such as metal/double-insulator/ metal (MIIM) diodes, [ 13 , 19 ] geometric diodes, [ 20 , 21 ] and molecular diodes. [ 22 , 23 ] Quantum-based electron-transport (tunneling based) are targeted for the rectifi cation mechanism in suitably designed MIM structures [ 24 ] because the tunneling process yields time constants in the range of femto seconds (10 − 15 s). A well-designed MIM structures can therefore potentially rectify frequencies as high as 10 15 Hz. Signifi cant progress has been made to fabricate nano-sized MIM diodes, a geometric requirement for THz frequency applications. [ 15 , 16 ] For MIM systems, numerous works have been reported which provide an understanding of the transport mechanism, [ 25 , 26 ] the theory of device operation [ 27 , 28 ] and suitability of MIM for energy harvesting applications. [ 29 ] However, systematic experimental studies to correlate material properties to MIM rectifi cation performance have been largely absent. Consequently, materials-design rules to help choose suitable materials for the MIM stack that favor the desired rectifi cation behavior are lacking. In a recent review article, Miskovsky et al., highlighted the importance of investigating material properties and designing new materials to optimize MIM high-frequency rectifi cation performance. [ 30 ]

Development and application of an instrument for spatially resolved Seebeck coefficient measurements.

The Seebeck coefficient is a key indicator of the majority carrier type (electrons or holes) in a material. The recent trend toward the development of combinatorial materials research methods has necessitated the development of a new high-throughput approach to measuring the Seebeck coefficient at spatially distinct points across any sample. The overall strategy of the high-throughput experiments is to quickly identify the region of interest on the sample at some expense of accuracy, and then study this region by more conventional techniques. The instrument for spatially resolved Seebeck coefficient measurements reported here relies on establishing a temperature difference across the entire compositionally graded thin-film and consecutive mapping of the resulting voltage as a function of position, which facilitates the temperature-dependent measurements up to 400 °C. The results of the designed instrument are verified at ambient temperature to be repeatable over 10 identical samples and accurate to within 10% versus conventional Seebeck coefficient measurements over the -100 to +150 μV/K range using both n-type and p-type conductive oxides as test cases. The developed instrument was used to determine the sign of electrical carriers of compositionally graded Zn-Co-O and Ni-Co-O libraries prepared by combinatorial sputtering. As a result of this study, both cobalt-based materials were determined to have p-type conduction over a broad single-phase region of chemical compositions and small variation of the Seebeck coefficient over the entire investigated range of compositions and temperature.

Nickel oxide interlayer films from nickel formate–ethylenediamine precursor: influence of annealing on thin film properties and photovoltaic device performance

An organometallic ink based on the nickel formate–ethylenediamine (Ni(O2CH)2(en)2) complex forms high performance NiOx thin film hole transport layers (HTL) in organic photovoltaic (OPV) devices. Improved understanding of these HTLs functionality can be gained from temperature-dependent decomposition/oxidation chemistries during film formation and corresponding chemical structure-function relationships for energetics, charge selectivity, and transport in photovoltaic platforms. Investigations of as-cast films annealed in air (at 150 °C–350 °C), with and without subsequent O2-plasma treatment, were performed using thermogravimetric analysis, Fourier transform infrared spectroscopy, ultraviolet and X-ray photoelectron spectroscopy, and spectroscopic ellipsometry to elucidate the decomposition and oxidation of the complex to NiOx. Regardless of the anneal temperature, after exposure to O2-plasma, these HTLs exhibit work functions greater than the ionization potential of a prototype donor polymer poly(N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole) (PCDTBT), thereby meeting a primary requirement of energy level alignment. Thus, bulk-heterojunction (BHJ), OPV solar cells made on this series of NiOx HTLs all exhibit similar open circuit voltages (Voc). In contrast, the short circuit currents increase significantly from 1.7 to 11.2 mA cm−2 upon increasing the anneal temperature from 150 °C to 250 °C. Concomitantly, increased conductivity and electrical homogeneity of NiOx thin films are observed at the nanoscale using conductive tip-AFM. Similar Voc observed for all the O2-plasma treated NiOx interlayers and variations to nanoscale conductivity suggest that the HTLs all form charge selective contacts and that their carrier extraction efficiency is determined by the amount of precursor conversion to NiOx. The separation of these two properties: selectivity and conductivity, sheds further light on charge selective interlayer functionality.

Third-order nonlinear optical properties of methylammonium lead halide perovskite films

We report third-order nonlinear coefficient values and decay time kinetics vs. halide composition (CH3NH3PbBr3 and CH3NH3PbBr2I), temperature, and excitation wavelength. The maximum values of the third-order nonlinear susceptibility χ(3) (∼1.6 × 10−6 esu) are similar to or larger than many common third-order materials. The source of the nonlinearity is shown to be primarily excitonic in the tribromide film by virtue of its strong enhancement near the exciton resonance. Nonresonant excitation reduces the nonlinearity significantly, as does increasing the temperature. Substitution of one I for one Br also reduces the nonlinearity by at least one order of magnitude, presumably due to the lack of strong exciton resonance in the substituted form. The thin films are stable, highly homogenous (lacking significant light scattering), and simple and inexpensive to fabricate, making them potentially useful in a variety of optoelectronic applications in which wavelength selectivity is important.

Effects of alloying on the optical properties of organic–inorganic lead halide perovskite thin films

Complex refractive index and dielectric function spectra of organic–inorganic lead halide perovskite alloy thin films are presented, together with the critical-point parameter analysis (energy and broadening) of the respective composition. Thin films of methylammonium lead halide alloys (MAPbI3, MAPbBr3, MAPbBr2I, and MAPbBrI2), formamidinium lead halide alloys (FAPbI3, FAPbBr3, and FAPbBr2I), and formamidinium cesium lead halide alloys [FA0.85Cs0.15PbI3, FA0.85Cs0.15PbBrI2, and FA0.85Cs0.15Pb(Br0.4I0.6)3] were studied. The complex refractive index and dielectric functions were determined by spectroscopic ellipsometry (SE) in the photon energy range of 0.7–6.5 eV. Critical point energies and optical transitions were obtained by lineshape fitting to the second-derivative of the complex dielectric function data of these thin films as a function of alloy composition. Absorption onset in the vicinity of the bandgap, as well as critical point energies and optical band transition shift toward higher energies as the concentration of Br in the films increases. Cation alloying (Cs+) has less effect on the optical properties of the thin films compared to halide mixed alloys. The reported optical properties can help to understand the fundamental properties of the perovskite materials and also be used for optimizing or designing new devices.

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structures favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.

Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films

The utilization of radio-frequency (RF) superimposed direct-current (DC) magnetron sputtering deposition on the properties of gallium doped ZnO (GZO) based transparent conducting oxides has been examined. The GZO films were deposited using 76.2 mm diameter ZnO:Ga2O3 (5 at. % Ga vs. Zn) ceramic oxide target on heated non-alkaline glass substrates by varying total power from 60 W to 120 W in steps of 20 W and at various power ratios of RF to DC changing from 0 to 1 in steps of 0.25. The GZO thin films grown with pure DC, mixed approach, and pure RF resulted in conductivities of 2200 ± 200 S/cm, 3920 ± 600 S/cm, and 3610 ± 400 S/cm, respectively. X-ray diffraction showed all films have wurtzite ZnO structure with the c-axis oriented perpendicular to the substrate. The films grown with increasing RF portion of the total power resulted in the improvement of crystallographic texture with smaller full-width half maximum in χ and broadening of optical gap with increased carrier concentration via more efficient do...