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Dive into the research topics where Akinobu Yoshida is active.

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Featured researches published by Akinobu Yoshida.


AIP Advances | 2017

Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform

Kohei Chiba; Katsuhiro Tomioka; Akinobu Yoshida; Junichi Motohisa

Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a μm-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio.


Journal of Crystal Growth | 2017

Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy

Akinobu Yoshida; Katsuhiro Tomioka; Fumiya Ishizaka; Junichi Motohisa


PRiME 2016/230th ECS Meeting (October 2-7, 2016) | 2016

Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications

Akinobu Yoshida; Katsuhiro Tomioka; Fumiya Ishizaka; Kohei Chiba; Junichi Motohisa


Journal of Crystal Growth | 2019

Growth and characterization of GaAs nanowires on Ge(1 1 1) substrates by selective-area MOVPE

Yusuke Minami; Akinobu Yoshida; Junichi Motohisa; Katsuhiro Tomioka


The Japan Society of Applied Physics | 2018

InGaAs nanowires with various In compositions for vertical transistor application

Akinobu Yoshida; Katsuhiro Tomioka; Kohei Chiba; Junichi Motohisa


The Japan Society of Applied Physics | 2018

High-performance InAs nanowire vertical FET on Si

Hironori Gamo; Katsuhiro Tomioka; Akinobu Yoshida; Kohei Chiba; Junichi Motohisa


The Japan Society of Applied Physics | 2017

Selective-area growth of InGaAs nanowires with various In compositions

Akinobu Yoshida; Katsuhiro Tomioka; Fumiya Ishizaka; Junichi Motohisa


The Japan Society of Applied Physics | 2017

Selective-Area MOVPE of GaAs Nanowires on Ge(111) Substrate

Yusuke Minami; Akinobu Yoshida; Katsuhiro Tomioka; Junichi Motohisa


The Japan Society of Applied Physics | 2017

InAsP Nanowire Quantum Dots Emitting at Telecom Wavelength

Masahiro Sasaki; Kohei Chiba; Akinobu Yoshida; Katsuhiro Tomioka; Junichi Motohisa


The Japan Society of Applied Physics | 2017

Demonstration of InGaAs nanowire array photodiode on Si substrate

Kohei Chiba; Akinobu Yoshida; Katsuhiro Tomioka; Junichi Motohisa

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