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Dive into the research topics where Akira Ichida is active.

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Featured researches published by Akira Ichida.


Materials and Manufacturing Processes | 1994

CVD Tungsten and Tungsten-Rhenium Alloys for Structural Applications

Takehiko Hayashi; Shigehiko Takaoka; Akira Ichida; Hisanori Ohara; Takashi Yoshioka

Abstract The microstructures of CVD tungsten and tungsten-rhenium alloys have been investigated to evaluate their suitability as high temperature materials. We found that the partial pressure in the reaction chamber affected the microstructure and surface roughness of deposited pure tungsten and tungsten-rhenium alloys. Grain sizes smaller than 0.5 im were obtained for both deposited pure tungsten and tungsten-rhenium alloys. Fine-grained tungsten proved to have greater hardness (Hv>1000 at room temperature (R.T.)) bending strength (δ = 700-1230 MPa at R.T.-l 175 K) and thermal coefficient of linear expansion (β = 4.5-4.9 xl06K−1 at 575-1175 K) characteristics than tungsten with columnar structure.


2003 International Electronic Packaging Technical Conference and Exhibition, Volume 1 | 2003

Effect of Ni Coating Over Cu Ball on the Microstructure of Flip Chip Joints With Cu-Cored Solder Balls

Ikuo Shohji; Yuji Shiratori; Hiroshi Yoshida; Masahiko Mizukami; Akira Ichida

Effect of Ni coating over the Cu core of Cu-cored Sn-5mass%Ag balls was investigated on the microstructures of flip chip joints with Ni/Au plated Cu pads after reflow soldering and the subsequent heat exposure at 423 K. For joints using Cu-cored Sn-5Ag balls with Ni coating over the Cu core, a Ni-Sn reaction layer forms at the Cu core/Sn-5Ag interface. A similar Ni-Sn reaction layer forms at the interface between the Sn-5Ag solder and the Ni/Au plated Cu pad. Although the Ni-Sn reaction layers grow with increasing the thermal exposure time, the growth rate is slower than that of a Cu-Sn reaction layer formed at the Cu core/Sn-5Ag interface in the joint with the Cu-cored Sn-5Ag ball without Ni coating over the Cu core.Copyright


Archive | 1993

Plastic-packaged semiconductor device having a heat sink matched with a plastic package

Tadashi Arikawa; Mitsuru Tsuchiya; Akira Ichida; Tadashi Igarashi


Archive | 2001

Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same

Mitsuo Osada; Akira Ichida; Norio Hirayama; Kiyoshi Asai; Hidetoshi Maesato; Tadashi Arikawa


Archive | 1993

MANUFACTURE OF HEAT RADIATING SUBSTRATE FOR SEMICONDUCTOR DEVICE

Tadashi Arikawa; Yoshihiko Doi; Takehiko Hayashi; Akira Ichida; Kenichiro Shibata; 良彦 土井; 晃 市田; 正 有川; 武彦 林; 憲一郎 柴田


Archive | 2000

Semiconductor package using micro balls and production method thereof

Akira Ichida; Hiroshi Yoshida; Masahiko Mizukami; Yoshihiko Doi


Archive | 2003

Semiconductor package and method for producing heat-radiating substrate for it

Norio Hirayama; Mitsuo Osada; Akira Ichida; Yoshinari Amano; Kiyoshi Asai; Hidetoshi Maesato; Tadashi Arikawa; Kenji Sakimae


Archive | 2001

Plasma facing components of nuclear fusion reactors employing tungsten materials

Masato Akiba; Kazuyuki Nakamura; Akira Ichida; Takehiko Hayashi


Archive | 1999

Heat radiating substrate and manufacture thereof

Tadashi Arikawa; Akira Ichida; Yasuo Yamabuchi; 保夫 山淵; 晃 市田; 正 有川


Archive | 1996

Heat radiating substrate of laminated structure and its manufacture

Tadashi Arikawa; Akira Ichida; 晃 市田; 正 有川

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Mitsuo Osada

Sumitomo Electric Industries

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Takehiko Hayashi

Sumitomo Electric Industries

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Yoshinari Amano

Sumitomo Electric Industries

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Shigehiko Takaoka

Sumitomo Electric Industries

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Hisanori Ohara

Sumitomo Electric Industries

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Kazuyuki Nakamura

Japan Atomic Energy Research Institute

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Kenichiro Shibata

Sumitomo Electric Industries

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Masato Akiba

Japan Atomic Energy Research Institute

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