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Featured researches published by Albert J. P. Theuwissen.


international electron devices meeting | 1991

A 2.2 M pixel FT-CCD imager according to the Eureka HDTV standard

Albert J. P. Theuwissen; Herman L. Peek; M.J.H. van de Steeg; R.M.G. Boesten; P.B. Hartog; A.L. Kokshorn; E.A. De Koning; J.M.A.M. Oppers; F.F. Vledder; P.G.M. Centen; H. Blom; W. Haar

The first frame transfer CCD (charge coupled device) imager with 2.2 Mpixel, developed for use in HDTV (high-definition television) applications according to the Eureka HDTV standard, is reported with 1250 lines/frame, 1920 pixels/line, 50 fields/sec, aspect ratio of 16:9, and 2:1 interlacing. The image section of the CCD fits an optical system of 1 in., corresponding to a diagonal of 16 mm. The total chip area is 240 mm/sup 2/. This huge HDTV sensor has tackled successfully some typical technological challenges: high RC-value of the poly-silicon CCD gates; the high pixel count resulting in an output rate of 72 MHz; providing the device with a highly sensitive, low-noise, and high-bandwidth output amplifier; and a compact and efficient CCD cell combining the photo conversion, CCD transport, vertical anti-blooming, and electronic charge reset. >


IEEE Solid-state Circuits Magazine | 2010

Better Pictures Through Physics

Albert J. P. Theuwissen

Over the last decade, CMOS image sensor technology has made huge progress. Not only has the imagers performance improved drastically, but there has also been great commercial success since the introduction of mobile phones with onboard cameras. Many scientists and marketing specialists predicted 15 years ago that CMOS image sensors were going to take over completely from charge coupled device (CCD) imagers, just as CCD imagers took over the imaging business from tubes in the mid-1980s [1].


IEEE Transactions on Electron Devices | 2002

Frame transfer CCDs for digital still cameras: concept, design, and evaluation

J.T. Bosiers; A.C. Kleimann; H. van Kuijk; L. Le Cam; Herman L. Peek; Joris P. Maas; Albert J. P. Theuwissen

Digital still cameras are becoming a widely used alternative for conventional silver-halide cameras. This paper presents first the concept of frame-transfer CCD imagers designed for consumer digital cameras. Next, the different modes of operation are explained in detail and compared with alternative approaches. Finally, extensive evaluation results on four different imagers using this new concept are presented. It will be demonstrated that the flexible modes of operation, the high dynamic range, and excellent optical properties of FT-CCDs make them very suited for this type of electronic imaging.


international electron devices meeting | 1993

Groove-fill of tungsten and poly-Si membrane technology for high performance (HDTV) FT-CCD imagers

Herman L. Peek; Albert J. P. Theuwissen; Andre L. Kokshoorn; E.J.M. Daemen

Key technologies necessary for the manufacturing of a HDTV Frame Transfer CCD sensor are reported: a groove-fill titanium-tungsten/tungsten shunt wiring technology, directly resulting in a planar surface; non-overlapping poly-Si transfer gate method; very thin poly-Si gate-electrodes (membrane poly-gates technology). With these technologies HDTV FT-CCD an image sensor with a high vertical frame-shift frequency of 25 MHz, a low on-chip power dissipation of 560 mW, and a high sensitivity in general (especially in blue), has been fabricated succesfully.<<ETX>>


IEEE Transactions on Electron Devices | 1991

The tacking CCD: a new CCD concept

Jacques G. C. Bakker; Leonard J. M. Esser; Herman L. Peek; Colm John Sweeney; Andre L. Kokshoorn; Albert J. P. Theuwissen

The tacking CCD is a new type of charge transport mechanism that is suitable for junction- and MOS-type CCDs. A specific form, the trenched tacking CCD (TTCCD), promises high pixel density and high charge handling capability per unit of surface area. The charge handling capability is improved by using a trench to increase the charge storage area. With the new design concept it becomes possible to put the gates entirely into trenches, while simultaneously using the trenches as channel stops. The TTCCD structure is suitable for making new types of solid-state image sensors with increased light sensitivity, and it may be possible to incorporate a vertical overflow drain. First samples of the TTCCD have been realized, and its functionality has been confirmed. >


international electron devices meeting | 1995

An mK/spl times/nK modular image sensor design

G. Kreider; Jan T. Bosiers; B. Dillen; J. van der Heijden; W. Hoekstra; A.C. Kleimann; P. Opmeer; J.M.A.M. Oppers; Herman L. Peek; R. Pellens; Albert J. P. Theuwissen

A 1 K/spl times/2 K full frame sensor demonstrates a new modular sensor design. Each imager in the family is built from smaller, abutable blocks which are exposed in the correct position during lithography. These blocks can be stacked to form sensors of arbitrary size, all based on the same pixel structure. These pixels have a high charge handling capability, vertical anti-blooming, electronic shuttering, a high light sensitivity, and low dark current.


Archive | 1998

Philips Imaging Technology and the MK×NK Image Sensor

Albert J. P. Theuwissen; J. W. Beletic; P. Amico

Through timely research, development and production of application-specific image sensors, Philips Imaging Technology wants to supply quality products, including adequate support, to its customers according to their needs and satisfaction.


Optics & Photonics News | 1995

CONSUMER CCDS: MASTERPIECES OF 3-D INTEGRATION

Albert J. P. Theuwissen; Jan T. Bosiers

The development of CCDs for consumer applications is driven by cost reduction considerations. In this very competitive, high-volume market (over 10 million CCDs per year) the drive is toward an ever lower cost for a CCD camera while maintaining (or even improving) performance and adding extra features.


Intelligent Robots and Computer Vision XIII: 3D Vision, Product Inspection, and Active Vision | 1994

Real-time imaging with mega-pixel charge-coupled devices

Albert J. P. Theuwissen; Jan T. Bosiers; H. Heijns; Gregory Kreider; Herman L. Peek; Edwin Roks; Chris J. Schaeffer; Holger Stoldt

A technology is described which allows the application of real-time imaging in combination with mega-pixel CCDs. This technology is based on the following characteristics: high-speed transport of the video information through the parallel CCDs in the imaging section, very high-speed transport of the charge packets through the serial section of the devices, and high- speed conversion of the electrons to a measurable voltage by the output amplifier. Key competencies to comply with these requirements are: low-resistive CCD gates, low- capacitance CCD gates and high bandwidth and low noise floor output stages.


Archive | 2007

SINGLE SLOPE ANALOG-TO-DIGITAL CONVERTER

Martijn F. Snoeij; Adrianus J. Mierop; Albert J. P. Theuwissen; Johannes H. Huijsing

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