Aleksandar Matković

Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

Scalably grown and transferred graphene is a highly promising material for organic electronic applications, but controlled interfacing of graphene thereby remains a key challenge. Here, we study the growth characteristics of the important organic semiconductor molecule para-hexaphenyl (6P) on chemical vapor deposited graphene that has been transferred with polymethylmethacrylate (PMMA) onto oxidized Si wafer supports. A particular focus is on the influence of PMMA residual contamination, which we systematically reduce by H2 annealing prior to 6P deposition. We find that 6P grows in a flat-lying needle-type morphology, surprisingly independent of the level of PMMA residue and of graphene defects. Wrinkles in the graphene typically act as preferential nucleation centers. Residual PMMA does however limit the length of the resulting 6P needles by restricting molecular diffusion/attachment. We discuss the implications for organic device fabrication, with particular regard to contamination and defect tolerance.

Atomic force microscopy based manipulation of graphene using dynamic plowing lithography

Tapping mode atomic force microscopy (AFM) is employed for dynamic plowing lithography of exfoliated graphene on silicon dioxide substrates. The shape of the graphene sheet is determined by the movement of the vibrating AFM probe. There are two possibilities for lithography depending on the applied force. At moderate forces, the AFM tip only deforms the graphene and generates local strain of the order of 0.1%. For sufficiently large forces the AFM tip can hook graphene and then pull it, thus cutting the graphene along the direction of the tip motion. Electrical characterization by AFM based electric force microscopy, Kelvin probe force microscopy and conductive AFM allows us to distinguish between the truly separated islands and those still connected to the surrounding graphene.

Spectroscopic imaging ellipsometry and Fano resonance modeling of graphene

In this work, we have examined the optical properties of exfoliated graphene on an Si/SiO2 substrate using spectroscopic imaging ellipsometry in the visible range (360–800 nm). Measured spectra were analyzed by an optical model based on the Fresnel coefficient equations. The optical model was supported by correlated Raman and atomic force microscopy measurements. The complex refractive index of graphene was obtained by inversion of the measured ellipsometry data. The Fano line-shape was used to parameterize the optical properties. Measurements were highly reliable due to the numerous advantages of the spectroscopic imaging ellipsometric technique combined with the proper choice of substrate and experimental set-up. Thickness maps of the graphene sample were obtained from spatially resolved imaging ellipsometry spectra with a spot size of 1 μm. The data showed the presence of a water layer on the surface of the sample, and the thickness was mapped showing the distribution of water over graphene in ambient ...

Influence of transfer residue on the optical properties of chemical vapor deposited graphene investigated through spectroscopic ellipsometry

In this study, we have examined the effects of transfer residue and sample annealing on the optical properties of chemical vapor deposited graphene, transferred onto a sapphire substrate. The optical absorption of graphene was obtained from point-by-point inversion of spectroscopic ellipsometry measurements in the visible and ultraviolet ranges (250–800 nm). Measured spectra were analyzed by optical models based on the Fresnel coefficient equations. The optical models were supported by correlated Raman, scanning electron microscopy, and atomic force microscopy measurements. The obtained data were phenomenologically described by a Fano model. Our results show that a residue layer left on graphene can significantly increase its optical absorption in the visible range, compared to an annealed sample.

Spectroscopic ellipsometry and the Fano resonance modeling of graphene optical parameters

We investigate the optical response of graphene via spectroscopic ellipsometry in the ultraviolet and visible ranges. The optical conductance of graphene is described by a Fano model. The parameters of this model are extracted from our spectroscopic ellipsometry measurements, and the complex refractive index of graphene is obtained. Graphenes dispersion relation shows that the density of states function has a logarithmic van Hove singularity corresponding to the M point of the Brillouin zone. The exciton binding energy is calculated as the difference between the resonant and the saddle point energies.

Enhanced structural stability of DNA origami nanostructures by graphene encapsulation

We demonstrate that a single-layer graphene replicates the shape of DNA origami nanostructures very well. It can be employed as a protective layer for the enhancement of structural stability of DNA origami nanostructures. Using the AFM based manipulation, we show that the normal force required to damage graphene encapsulated DNA origami nanostructures is over an order of magnitude greater than for the unprotected ones. In addition, we show that graphene encapsulation offers protection to the DNA origami nanostructures against prolonged exposure to deionized water, and multiple immersions. Through these results we demonstrate that graphene encapsulated DNA origami nanostructures are strong enough to sustain various solution phase processing, lithography and transfer steps, thus extending the limits of DNA-mediated bottom-up fabrication.

Effect of Water Layer at the SiO2/Graphene Interface on Pentacene Morphology

Atomic force microscopy has been used to examine early stages of pentacene growth on exfoliated single-layer graphene transferred to SiO2 substrates. We have observed 2D growth with mean height of 1.5 ± 0.2 nm on as-transferred graphene. Three-dimensional islands of pentacene with an average height of 11 ± 2 nm were observed on graphene that was annealed at 350 °C prior to pentacene growth. Compellingly similar 3D morphology has been observed on graphene transferred onto SiO2 that was treated with hexamethyldisilazane prior to the transfer of graphene. On multilayer graphene we have observed 2D growth, regardless of the treatment of SiO2. We interpret this behavior of pentacene molecules in terms of the influence of the dipolar field that emerges from the water monolayer at the graphene/SiO2 interface on the surface energy of graphene.

Femtosecond laser induced periodic surface structures on multi-layer graphene

In this work, we present an observation of laser induced periodic surface structures (LIPSS) on graphene. LIPSS on other materials have been observed for nearly 50 years, but until now, not on graphene. Our findings for LIPSS on multi-layer graphene were consistent with previous reports of LIPSS on other materials, thus classifying them as high spatial frequency LIPSS. LIPSS on multi-layer graphene were generated in an air environment by a linearly polarized femtosecond laser with excitation wavelength λ of 840 nm, pulse duration τ of ∼150 fs, and a fluence F of ∼4.3–4.4 mJ/cm2. The observed LIPSS were perpendicular to the laser polarization and had dimensions of width w of ∼30–40 nm and length l of ∼0.5–1.5 μm, and spatial periods Λ of ∼70–100 nm (∼λ/8–λ/12), amongst the smallest of spatial periods reported for LIPSS on other materials. The spatial period and width of the LIPSS were shown to decrease for an increased number of laser shots. The experimental results support the leading theory behind high s...

Temperature dependent growth morphologies of parahexaphenyl on SiO2 supported exfoliated graphene

The growth of small conjugated molecules on graphene is of increasing interest, since the latter bears the potential to serve as a transparent electrode for organic solar cells and light emitting diodes. Here, parahexaphenyl thin films have been grown by hot wall epitaxy on SiO2 supported exfoliated graphene. The arising morphologies—studied by atomic force microscopy—exhibit a strong dependence on deposition temperature. At temperatures from 280 K–333 K, islands consisting of almost upright standing molecules and needles composed from lying molecules coexist on the graphene flake. Between 363 and 423 K solely needles—consisting of lying molecules—are present on the graphene. The needles form well-ordered networks with relative orientation angles of ∼30°, ∼60°, and ∼90° reflecting the symmetry of the graphene substrate.

Damage effects on multi-layer graphene from femtosecond laser interaction

We present a study on the damage effects of femtosecond laser interaction on exfoliated multi-layer graphene using the techniques of optical microscopy, atomic force microscopy, and Raman spectroscopy. Various effects of the interaction were observed. The ablation threshold was found to be ?4 mJ cm?2, and was slightly higher in transmission mode than in reflection mode. This work also demonstrates the feasibility of ultrafast laser patterning of exfoliated multi-layer graphene.