Aleksandra Malko

A 175 GHz HBV Frequency Quintupler With 60 mW Output Power

In this letter, we present a fixed tuned 175 GHz frequency quintupler with 60 mW output power. The peak efficiency is 6.3% and the 3 dB bandwidth is 8 GHz. The multiplier is based on a single Heterostructure Barrier Varactor (HBV) diode that is flip-chip soldered into a microtsrip matching circuit. All the matching is done “on-chip” and there is no need for dc bias. The multiplier block is very compact (25 × 9 × 8 mm3).

Silicon Integrated InGaAs/InAlAs/AlAs HBV Frequency Tripler

We present an integrated heterostructure barrier varactor frequency tripler on silicon substrate. The InGaAs/InAlAs/AlAs material structure is transferred onto the silicon wafer using low-temperature plasma-assisted bonding. The presented multiplier operates in the W-band (90-110 GHz). The module delivers 22.6 dBm, with a conversion loss of 6 dB, and 9% 3-dB bandwidth.

A 474 GHz HBV Frequency Quintupler Integrated on a 20

We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( ×5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 μm) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.

\mu{\hbox{m}}

We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) frequency tripler operating in the W-band frequency range. The device utilizes series connection of four HBV diode mesas, with total 12 barriers, and a cross section area of 700 μm2. The presented tripler withstands 800 mW input power, while delivering 185 mW of output power at 107 GHz. The corresponding conversion efficiency was measured to be 23% and the circuit exhibited 15% 3-dB bandwidth.

Thick Silicon Substrate

We present the development of integrated submillimeter wave receivers and transmitters based on Schottky- and HBV-diode technology at Chalmers University of technology.

High efficiency and broad-band operation of monolithically integrated W-Band HBV frequency tripler

There is a high demand for compact, room-temperature sources operating at millimeter-wave and terahertz (THz) frequencies for space instruments and terrestrial applications. This part of the electromagnetic spectrum is by far the least explored because of the difficulty of generating energy at these frequencies. Continuous-wave oscillators based on either electronics or photonics are limited in output power for fundamental reasons. Varistor and varactor frequency multipliers have shown outstanding performance in terms of output power, but further technical development will be essential to solve the lack of efficient and compact terahertz sources. In this paper, we present the status of heterostructure barrier varactor (HBV) diode frequency multipliers. The performance and prospects for THz applications in which HBV diode technology can offer advantages over conventional solutions are discussed. For instance, such a device can be easily scaled by increasing the number of barriers to produce and handle higher power. The inherent symmetry confines the power generation to odd harmonics, thereby simplifying the design of high-order frequency multipliers. For example, high-power triplers (

Integrated terahertz electronics for imaging and sensing

\times 3

Status and Prospects of High-Power Heterostructure Barrier Varactor Frequency Multipliers

), quintuplers (

Heterogeneous integration of terahertz diode circuits

\times 5

Effect of bismuth on structural and electrical properties of InAs films grown on GaAs substrates by MBE

), nonlinear transmission lines (NLTLs) and grid multipliers utilizing HBV diodes are presented. Overall, HBV technology is a natural stepping stone from high-power microwave amplifiers to higher frequencies and can both simplify and improve the performance of terahertz sources.