Tomas Bryllert

Vertical high-mobility wrap-gated InAs nanowire transistor

In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 /spl times/ 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V/sub ds/=0.15 V (V/sub g/=0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.

Penetrating 3-D Imaging at 4- and 25-m Range Using a Submillimeter-Wave Radar

We show experimentally that a high-resolution imaging radar operating at 576-605 GHz is capable of detecting weapons concealed by clothing at standoff ranges of 4-25 m. We also demonstrate the critical advantage of 3-D image reconstruction for visualizing hidden objects using active-illumination coherent terahertz imaging. The present system can image a torso with <1 cm resolution at 4 m standoff in about five minutes. Greater standoff distances and much higher frame rates should be achievable by capitalizing on the bandwidth, output power, and compactness of solid state Schottky-diode based terahertz mixers and multiplied sources.

Vertical wrap-gated nanowire transistors

We present a process for fabricating a field-effect transistor based on vertically standing InAs nanowires and demonstrate initial device characteristics. The wires are grown by chemical beam epitaxy at lithographically defined locations. Wrap gates are formed around the base of the wires through a number of deposition and etch steps. The fabrication is based on standard III–V processing and includes no random elements or single nanowire manipulation.

Confocal Ellipsoidal Reflector System for a Mechanically Scanned Active Terahertz Imager

We present the design of a reflector system that can rapidly scan and refocus a terahertz beam for high-resolution standoff imaging applications. The proposed optical system utilizes a confocal Gregorian geometry with a small mechanical rotating mirror and an axial displacement of the feed. For operation at submillimeter wavelengths and standoff ranges of many meters, the imaging targets are electrically very close to the antenna aperture. Therefore the main reflector surface must be an ellipse, instead of a parabola, in order to achieve the best imaging performance. Here we demonstrate how a simple design equivalence can be used to generalize the design of a Gregorian reflector system based on a paraboloidal main reflector to one with an ellipsoidal main reflector. The system parameters are determined by minimizing the optical path length error, and the results are validated with numerical simulations from the commercial antenna software package GRASP. The system is able to scan the beam over 0.5 m in cross-range at a 25 m standoff range with less than 1% increase of the half-power beam-width.

Vertical high mobility wrap-gated inas nanowire transistor

We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm2/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of Vg = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude

High peak-to-valley ratios observed in InAs/InP resonant tunneling quantum dot stacks

Resonant tunneling was observed through single InAs quantum dot (QD) stacks embedded in InP barriers with peak-to-valley ratios as high as 85 at 7 K. Negative differential resistance in the current–voltage [I(V)] characteristics was obtained up to a point above the temperature of liquid nitrogen. These features were observed in measurements on low-density QD stacks, in which a macroscopic ohmic contact covered less than 150 QD stacks. Due to the design of the structure, the upper QD in the stack has the function of a zero-dimensional emitter. Electrons easily fill the upper dot, whereas tunneling through the entire structure is only allowed when two states in the dots align energetically, resulting in sharp resonant tunneling peaks with high peak-to-valley ratios.

Integrated 200–240-GHz FMCW Radar Transceiver Module

We present a 220-GHz homodyne transceiver module intended for frequency modulated continuous wave radar applications. The RF transceiver circuits are fabricated on 3-μm-thick GaAs membranes, and consist of a Schottky diode based transmitter frequency doubler that simultaneously operates as a sub-harmonic down-converting mixer. Two circuits are used in a balanced configuration to improve the noise performance. The output power is > 3 dBm over a 40-GHz bandwidth (BW) centered at 220 GHz, and the receiver function is characterized by a typical mixer conversion loss of 16 dB. We present radar images at 4-m target distance with up to 60-dB dynamic range using a 30-μs chirp time, and near-BW-limited range resolution. The module is intended for applications in high-resolution real-time 3-D radar imaging, and the unit is therefore designed so that it can be assembled into 1-D or 2-D arrays.

A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHz

We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal dissipation and high efficiency. To verify simulations, the device was flip-chip soldered onto embedding microstrip circuitry on an aluminum nitride substrate. This hybrid circuit was then mounted in a waveguide block without any movable tuners. From the resulting RF measurements, the maximum output power was 195 mW at 113 GHz, with a conversion efficiency of 15%. The measured 3-dB bandwidth was 1.5%

Optimum barrier thickness study for the InGaAs∕InAlAs∕AlAs heterostructure barrier varactor diodes

This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the destructive current leaking over and through the barrier is investigated for different biases and operating temperatures. The authors found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current.

InAs quantum dots grown on InAlGaAs lattice matched to InP

In this paper, we present InAs quantum dots prepared on an InxAlyGa1-x-yAs surface by metal organic vapor phase epitaxy. Atomic force microscopy measurements indicate that dots grown on material with higher Al content are smaller, and that the local dot densities on step-bunched facets formed on the vicinal (0 0 1) surfaces increase. We find that these dots show luminescence at very long wavelengths, lambda(room temperature) approximate to 2.1 mum, and that the emission wavelengths are blue-shifted when the Al content is increased in the layer onto which dot material is deposited