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Dive into the research topics where Alex Q. Huang is active.

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Featured researches published by Alex Q. Huang.


Materials Science Forum | 2018

Shielded Gate SiC Trench Power MOSFET with Ultra-Low Switching Loss

Xuan Li; Xing Tong; Alex Q. Huang; Shi Qiu; Xu She; Xiao Сhuan Deng; Bo Zhang

A shielded gate trench silicon carbide (SiC) metal oxide semiconductor field effect transistor (SG-TMOS) is proposed and investigated by simulation in this paper. The impact of shielded gate design in SG-TMOS on Miller charge (Qgd) as well as conduction resistance (Ron) are comprehensively discussed, showing a tradeoff between Qgd and Ron. Furthermore, the Huang’s Figure of Merit (HFOM) of the SG-TMOS with reasonable design of SG is reduced more than 20%, compared with the conventional trench MOSFET (C-TMOS). Therefore, the proposed SG-TMOS is a competitive next generation device structure for ultra-high switching speed SiC MOSFET.


IEEE Transactions on Industry Applications | 2017

15-kV/40-A FREEDM Supercascode: A Cost-Effective SiC High-Voltage and High-Frequency Power Switch

Xiaoqing Song; Alex Q. Huang; Soumik Sen; Liqi Zhang; Pengkun Liu; Xijun Ni

High-voltage wide bandgap semiconductor devices such as the 15xa0kV SiC mosfet have attracted great attention because of their potential applications in high-voltage and high-frequency power converters. However, these devices are not commercially available at the moment, and their high cost due to expensive material growth and fabrication may limit their widespread adoption in the future. In this paper, a 15-kV 40-A SiC three-terminal power switch, the Future Renewable Electric Energy Delivery and Management (FREEDM) supercascode, is reported for the first time, which is based on a series connection of 1.2-kV SiC power devices. Compared with the monolithic 15-kV SiC mosfet, the FREEDM supercascode demonstrates obvious advantages in cost and thermal conductivity. The design and voltage-balancing mechanism of the FREEDM supercascode are introduced, and the performance including the voltage balancing, conduction characteristics over a wide range of temperatures, and dynamic switching performance, is analyzed. The FREEDM supercascodes low cost and excellent thermal dissipation capability will facilitate early applications of SiC in very high voltage and high frequency power converters.


IEEE Transactions on Industry Applications | 2017

Active Damping of Ultrafast Mechanical Switches for Hybrid AC and DC Circuit Breakers

Chang Peng; Landon Mackey; Iqbal Husain; Alex Q. Huang; Wensong Yu; Bruno Lequesne; Roger Briggs

An active damping method for Thomson coil actuated ultrafast mechanical switches is proposed, including its control. Ultrafast mechanical switches are crucial for both dc and ac circuit breakers that require fast-acting current-limiting capabilities. However, fast motion means high velocity at the end of travel resulting in over-travel, bounce, fatigue, and other undesirable effects. The active damping proposed in this paper not only avoids such issues but actually enables faster travel by removing limitations that would otherwise be necessary. This active damping mechanism is applicable in particular to medium- and high-voltage circuit breakers, but can be extended to actuators in general. A 15 kV/630 A/1 ms mechanical switch designed to enable the fast protection of medium voltage dc circuits is used as a testbed for the concept. The switch is based on the principle of repulsion forces (Thomson coil actuator). By energizing a second coil, higher opening speeds can be damped, resulting in limited over-travel range of the movable contact. The overall structure is simple and the size of the overall switch is minimized. To validate the concept and to study the timing control for best active damping performance, both finite element modeling and experimental studies have been carried out.


Journal of Physics D | 2018

The 2018 GaN power electronics roadmap

Hiroshi Amano; Y Baines; Matteo Borga; T Bouchet; Paul R. Chalker; M Charles; Kevin J. Chen; Nadim Chowdhury; Rongming Chu; Carlo De Santi; Maria Merlyne De Souza; Stefaan Decoutere; L Di Cioccio; Bernd Eckardt; Takashi Egawa; Patrick Fay; Joseph J. Freedsman; Louis J. Guido; Oliver Häberlen; Geoff Haynes; Thomas Heckel; Dilini Hemakumara; P.A. Houston; Jie Hu; Mengyuan Hua; Qingyun Huang; Alex Q. Huang; Sheng Jiang; Hiroji Kawai; Dan Kinzer


IEEE Transactions on Electron Devices | 2018

SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode

Xuan Li; Xing Tong; Alex Q. Huang; Hong Tao; Kun Zhou; Yifan Jiang; Junning Jiang; Xiaochuan Deng; Xu She; Bo Zhang; Yourun Zhang; Qi Tian


ieee/pes transmission and distribution conference and exposition | 2018

A Study of Physical Limitation of Reactive Power Output Capability of Modern PV Inverters

Lan Ma; Yizhe Xu; Alex Q. Huang


ieee transportation electrification conference and expo | 2018

Three-phase Medium Voltage DC Fast Charger based on Single-stage Soft-switching Topology

Soumik Sen; Liqi Zhang; Tianxiang Chen; Jiucai Zhang; Alex Q. Huang


device research conference | 2018

High Voltage Vertical Gallium Nitride Pseudo-Junction-Barrier-Schottky Diode with Ion Implantation

Sizhen Wang; Alex Q. Huang


applied power electronics conference | 2018

A single-stage bidirectional dual-active-bridge AC-DC converter based on enhancement mode GaN power transistor

Tianxiang Chen; Ruiyang Yu; Qingyun Huang; Alex Q. Huang


applied power electronics conference | 2018

Performance optimization of A 1.2kV SiC high density half bridge power module in 3D package

Xin Zhao; Bo Gao; Liqi Zhang; Douglas C. Hopkins; Alex Q. Huang

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Liqi Zhang

North Carolina State University

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Qingyun Huang

University of Texas at Austin

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Soumik Sen

University of Texas at Austin

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Xiaoqing Song

North Carolina State University

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Pengkun Liu

University of Texas at Austin

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Tianxiang Chen

University of Texas at Austin

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Xin Zhao

North Carolina State University

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Bo Zhang

University of Electronic Science and Technology of China

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Xing Tong

University of Electronic Science and Technology of China

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