Alexandre Garreau

40-Gb/s Colorless Reflective Amplified Modulator

In this letter, we demonstrate a colorless reflective amplified modulator operating within the C- and L-band spectral ranges with the modulation data rate up to 40 Gb/s. We obtain a stable, open eye performance of the device at the temperature until 85°C. The presented device is fabricated using an indium phosphide (InP) monolithic integration platform, which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth, and low-parasitic RC semi-insulating buried heterostructures.

Hybrid silicon photonics flip-chip laser integration with vertical self-alignment

We present a flip-chip integration process in which the vertical alignment is guaranteed by a mechanical contact between pedestals defined in a recess etched into a silicon photonics chip and a laser or semiconductor optical amplifier. By selectively etching up to the active region of the III-V materials, we can make the accuracy of vertical alignment independent on the process control applied to layer thicknesses during silicon photonics or III-V chip fabrication, enabling alignment tolerances below ±10 nm in the vertical (Z-)direction.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range

Summary form only given. We report the first GaSb-based laser monolithically grown on Silicon substrate working in CW mode at room temperature with an emission in the telecom wavelength range. We will present the laser design, Silicon ex-situ preparation, technology process and electro-optics characterization. Broad-area laser diodes exhibit threshold-current densities 700 A/cm2. 10 μm × 1 mm diodes operate up to above 35 °C under continuous wave operation with an emission wavelength at 1.59 μm.

WDM transceiver with semiconductor mode locked laser

We demonstrate a Silicon Photonics transmitter/receiver pair wire bonded to chip-scale electronics and operated with a single section semiconductor mode locked laser. The compact WDM system supports twelve independent error free (BER<;1e-12) 14 Gbps channels without error correction, preemphasis or equalization.

Telecom & Energy Supplying System for robots in nuclear environment

TESS research project solves communication and energy issues for remote machines in nuclear environment. The energy and communication signal are transported by an optical cable from the control post to a relay on the working zone. Working robots are remotely controlled by the relay, which broadcasts wireless transmission. Working robots can recharge their batteries by plugging on the relay, without leaving the working zone. The proof of concept of the telecom architecture has been done. The relay is not realized.

Reflective amplified modulator operating at 40 Gbps up to 85°C as colorless transceiver for optical access networks

In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85°C within the C- and L-band spectral ranges. The presented device was fabricated using an indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bi-directional transmission. This 40 Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of a colorless transceiver.