Alexei Nazarov

Reduced electric field in junctionless transistors

The electric field perpendicular to the current flow is found to be significantly lower in junctionless transistors than in regular inversion-mode or accumulation-mode field-effect transistors. Since inversion channel mobility in metal-oxide-semionductor transistors is reduced by this electric field, the low field in junctionless transistor may give them an advantage in terms of current drive for nanometer-scale complementary metal-oxide semiconductor applications. This observation still applies when quantum confinement is present.

Low subthreshold slope in junctionless multigate transistors

The improvement of subthreshold slope due to impact ionization is compared between “standard” inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope.

Semiconductor-on-insulator materials for nanoelectronics applications

New semiconductor-on-insulator materials.- Physics of modern SemOI devices.- Diagnostics of the SOI devices.- Sensors and MEMS on SOI.

Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

The processes of electro- (EL) and photoluminescence (PL) and charge trapping in Er-implanted SiO2 containing silicon nanoclusters have been studied. It is shown that in Er-doped SiO2 with an excess of silicon nanoclusters of 10 at. %, a strong energy transfer from silicon nanoclusters results in a ten-fold increase of the PL peak at 1540 nm from Er luminescent centers, whereas the EL is strongly quenched by the excess silicon nanoclusters. It is further shown that the implantation of Er creates in the oxide positive charge traps with a giant cross section (σh0>10−13cm2). Introducing subsequent silicon nanocrystals in the oxide leads to the formation of negative charge traps of a giant cross section (σe0>10−13cm2). The possible reason for the EL quenching in the Er-doped SiO2 by silicon nanoclusters is discussed.

Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure

The strong blue and red electroluminescence from Eu-implanted SiO2 layers were investigated as a function of implantation and annealing conditions. It is shown that the red electroluminescence assigned to Eu3+ ions is favored by low Eu concentrations, low annealing temperatures, and short annealing times. Based on a more quantitative analysis of the electroluminescence spectra this preference is explained by a shorter supply of oxygen for higher Eu concentrations and the growth of Europium or Europium oxide clusters with increasing annealing temperatures and annealing times. The correlation between electroluminescence and microstructure is supported by transmission electron microscopy investigations and demonstrates that the electroluminescence of Eu-implanted SiO2 layers can serve as a probe for the microstructural development in the active layer of the light emitter.

Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment

Part I: Technology and Economics. High temperature electronics - cluster effects C. Johnston and A. Crossley. On the evolution of SOI materials and devices J.P. Colinge.SOI Technology as a basis for microphotonic-microelectronic integrated devices M.Yu. Barabanenkov et al. Part II: SOI Material Technologies. Smart Cut Technology: the path for advanced SOI substrates H. Moriceau et al. Porous silicon based SOI: history and prospects V. Bondarenko et al. Achievement of SiGe-on-insulator technology Y. Ishikawaet al. CVD diamond substrates for SOI technologies V. Ralchenko et al. Radical-beam quasiepitaxy technology for fabrication of wide-band gap semiconductors on insulator G. Natsvlishvili et al. Impact of hydrostatic pressure during annealing of Si:O on creation of SIMOX-like structures A. Misiuk et al. SiO2 and Si3N4 phase formation by ion implantation with in-situ ultrasound treatment O. Martinyuk et al. Fabrication and characterisation of Silicon On Insulator substrates incorporating thermal vias M.F. Bain et al.Part III: Reliability and Operation of SOI Devices in Harsh Environment. Reliability and electrical fluctuations in advanced SOI CMOS devices J. Jomaah and F. Balestra. Hydrogen and high-temperature charge instability of SOI structures and MOSFETs A. Nazarov. Recent advances in SOI MOSFET devices and circuits for ultra-low power / high temperature applications D. Levacq et al. Silicon-on-insulator circuits for application at high temperatures V. Nakov. High-voltage SOI devices for automotive applications J. Olsson. Heat generation analysis in SOI LDMOS power transistors J. Roig et al. Novel SOI MOSFET structure for operation over a wide range of temperatures V.Ya. Uritsky. MOSFETs scaling down: advantages and disadvantages for high temperature applications V. Kilchytska et al. Temperature dependence of RF losses in HR SOI substrates D. Lederer and J.-P. Raskin. Part IV: Radiation Effects.Review ofradiation effects in single- and multiple-gate SOI MOSFETs S. Cristoloveanu. Radiation effects in SOI: Irradiation by high energy ions and electrons I. Antonova et al.Radiation characteristics of the short p-channel MOSFETs on SOI substrates A. Evtukh et al.Total dose behavior of partially depleted DeleCut SOI MOSFETs O.V. Naumova et al. Radiation effect on electrical properties of fully-depleted UNIBOND SOI MOSFETs Y. Houk et al.Part V : Characterization and Simulation of SOI Devices Operating under Harsh Environment. Low cost high temperature test system for SOI devices G. Russell et al. Characterization of carrier generation in thin-film SOI devices by reverse gated-diode technique and its application at high temperatures T.E. Rudenko et al. Back-gate induced noise overshoot in partially-depleted SOI MOSFETs N. Lukyanchikova et al.Part VI: Novel SOI Devices and Sensors Operating at Harsh Conditions. SiGe heterojunction bipolar transistors on insulating substrates S. Hall et al. Silicon-on-Insulator substrates with buried ground planes M. Bain et al. High-voltage high-current DMOS transistor compatible with high-temperature thin-film SOI CMOS applications P. Godignon et al. A novel low leakage EEPROM cell for application in an extended temperature range (-40 C up to 225 C) S. G. M. Richter et al. Design, fabrication and characterization of SOI pixel detectors of ionizing radiation D. Tomashevski et al. Polysilicon-on-insulator layers at cryogenic temperatures and high magnetic fields A.A. Druzhinin et al. Planar photomagnetic effect SOI sensors for various applications with low detection limit V.N. Dobrovolsky and V. Rossokhaty. Theoretical limit for the SiO2 thickness in silicon MOS devices B. Majkusiak, J. Walczak. Compact model of the nanoscale gate-all-around MOSFET D. Jimenez. Self-assembled semiconductor nanowires on silicon and insulating substrates: Experimental behavior T. Kamins, S.

Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

Negative and positive charge trapping in a constant current regime under high-field electron injection both from Al electrode and Si substrate in high-dose Ge+ ion implanted and then rapid thermal annealed thin-film dioxide has been studied. Negatively charged traps as well as generated positive charges with effective capture cross sections of σ1(−)>10−14 cm2, σ2(−)≈1.8×10−15, σ3(−)≈2×10−16, and σ4(−)≈3×10−18 cm2, as well as σ1(+)≈(5–7)×10−15 and σ2(+)≈3.3×10−16 cm2, respectively, are shown to be introduced into the oxide layer. A good correlation of the electron trap concentration with a cross section of σ1(−)>10−14 cm2 and the concentration of the implanted Ge atoms, determined by Rutherford backscattering spectrometry inside the oxide, is observed. The decrease of Ge concentration within the oxide layer with increasing duration of rapid thermal annealing is associated with Ge atom outdiffusion from the oxide at high-temperature annealing. The generated positive charge is shown to be collected near the ...

Random telegraph-signal noise in junctionless transistors

Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature. It is shown that the RTN in JL MOSFETs increases significantly when an accumulation layer is formed. The amplitude of RTN is considerably smaller in JL devices than in inversion-mode MOSFET fabricated using similar fabrication parameters. A measurement technique is developed to extract the main parameters of the traps, including the average charge capture and emission time from the traps.

Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions

The trapping effects of negative and positive charge in Ge-enriched SiO2 layers during high-field electron injection from the Si substrate of Al–SiO2–Si structures are studied. The capture cross section and the concentration of negatively and positively charged traps are estimated and the location of the positively charged traps is determined. It is shown that increasing rapid thermal annealing time from 6 to 150 s at 1000 °C leads to an enhanced diffusion of Ge towards the SiO2–Si interface and an increase in negatively and positively charged trap concentration. The mechanisms of the trap generation are discussed.

The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices

The effect of rare-earth clustering in dielectric media on the electroluminescence (EL) intensity, the charge trapping and the EL quenching was investigated using the example of Tb and Eu-implanted SiO2 layers. It was shown that the increase in the REOX cluster size induced by an increase in the furnace annealing temperature resulted in an increase in the concentration of electron traps with capture cross sections from 2×10−15 to 2×10−18 cm2. This is probably associated with an increase in the concentration of oxygen deficiency centers as well as with strained and dangling bonds in the SiO2 matrix which leads to an enhanced scattering of hot electrons and a decrease in the excitation cross section of the main EL lines of RE3+ ions. For the main EL lines of Tb3+ and Eu3+ ions the relation of the EL quenching to negative and positive charge generation in the SiO2 was considered. It was demonstrated that in case of REOX nanoclusters with small sizes (up to 5 nm) the EL quenching process can mainly be explain...