Alexei Zakharov

Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation.

Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 square root(3) x 6 square root(3))R30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer graphene turns into a decoupled bilayer. The intercalation is stable in air and can be reversed by annealing to around 900 degrees C.

Graphene Synthesis on Cubic SiC/Si Wafers. Perspectives for Mass Production of Graphene-Based Electronic Devices

The outstanding properties of graphene, a single graphite layer, render it a top candidate for substituting silicon in future electronic devices. The so far exploited synthesis approaches, however, require conditions typically achieved in specialized laboratories and result in graphene sheets whose electronic properties are often altered by interactions with substrate materials. The development of graphene-based technologies requires an economical fabrication method compatible with mass production. Here we demonstrate for the fist time the feasibility of graphene synthesis on commercially available cubic SiC/Si substrates of >300 mm in diameter, which result in graphene flakes electronically decoupled from the substrate. After optimization of the preparation procedure, the proposed synthesis method can represent a further big step toward graphene-based electronic technologies.

Growth Mechanism of Self-Catalyzed Group III−V Nanowires

Group III−V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal−organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III−V nanowires. By this mechanism most work available in literature concerning this field can be described.

Self-Assembled Growth, Microstructure, and Field-Emission High-Performance of Ultrathin Diamond Nanorods

We report the growth of ultrathin diamond nanorods (DNRs) by a microwave plasma assisted chemical vapor deposition method using a mixture gas of nitrogen and methane. DNRs have a diameter as thin as 2.1 nm, which is not only smaller than reported one-dimensional diamond nanostructures (4-300 nm) but also smaller than the theoretical value for energetically stable DNRs. The ultrathin DNR is encapsulated in tapered carbon nanotubes (CNTs) with an orientation relation of (111)diamond//(0002)graphite. Together with diamond nanoclusters and multilayer graphene nanowires/nano-onions, DNRs are self-assembled into isolated electron-emitting spherules and exhibit a low-threshold, high current-density (flat panel display threshold: 10 mA/cm2 at 2.9 V/microm) field emission performance, better than that of all other conventional (Mo and Si tips, etc.) and popular nanostructural (ZnO nanostructure and nanodiamond, etc.) field emitters except for oriented CNTs. The forming mechanism of DNRs is suggested based on a heterogeneous self-catalytic vapor-solid process. This novel DNRs-based integrated nanostructure has not only a theoretical significance but also has a potential for use as low-power cold cathodes.

Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy

We demonstrate an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001) that can be applied continuously during the preparation procedure. Fingerprints in the spot intensity spectra in low energy electron diffraction (LEED) allow for the exact determination of the number of layers for the first three graphene layers. The LEED data have been correlated with the electronic bandstructure around the K¯-point of the graphene Brillouin zone as investigated by laboratory based angle resolved ultraviolet photoelectron spectroscopy using He II excitation. The morphology and homogeneity of the graphene layers can be analyzed by low energy electron microscopy.

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers

Photoemission electron microscopy using extreme ultraviolet attosecond pulse trains

We report the first experiments carried out on a new imaging setup, which combines the high spatial resolution of a photoemission electron microscope (PEEM) with the temporal resolution of extreme ultraviolet (XUV) attosecond pulse trains. The very short pulses were provided by high-harmonic generation and used to illuminate lithographic structures and Au nanoparticles, which, in turn, were imaged with a PEEM resolving features below 300 nm. We argue that the spatial resolution is limited by the lack of electron energy filtering in this particular demonstration experiment. Problems with extensive space charge effects, which can occur due to the low probe pulse repetition rate and extremely short duration, are solved by reducing peak intensity while maintaining a sufficient average intensity to allow imaging. Finally, a powerful femtosecond infrared (IR) beam was combined with the XUV beam in a pump-probe setup where delays could be varied from subfemtoseconds to picoseconds. The IR pump beam could induce multiphoton electron emission in resonant features on the surface. The interaction between the electrons emitted by the pump and probe pulses could be observed.

Large homogeneous mono-/bi-layer graphene on 6H-SiC(0001) and buffer layer elimination

In this paper we discuss and review results of recent studies of epitaxial growth of graphene on silicon carbide. The presentation is focused on high quality, large and uniform layer graphene growth on the SiC(0 0 0 1) surface and the results of using different growth techniques and parameters are compared. This is an important subject because access to high-quality graphene sheets on a suitable substrate plays a crucial role for future electronics applications involving patterning. Different techniques used to characterize the graphene grown are summarized. We moreover show that atomic hydrogen exposures can convert a monolayer graphene sample on SiC(0 0 0 1) to bi-layer graphene without the carbon buffer layer. Thus, a new process to prepare large, homogeneous stable bi-layer graphene sheets on SiC(0 0 0 1) is presented. The process is shown to be reversible and should be very attractive for various applications, including hydrogen storage.

Ordering of the Nanoscale Step Morphology As a Mechanism for Droplet Self-Propulsion

We establish a new mechanism for self-propelled motion of droplets, in which ordering of the nanoscale step morphology by sublimation beneath the droplets themselves acts to drive them perpendicular and up the surface steps. The mechanism is demonstrated and explored for Ga droplets on GaP(111)B, using several experimental techniques allowing studies of the structure and dynamics from micrometers to the atomic scale. We argue that the simple assumptions underlying the propulsion mechanism make it relevant for a wide variety of materials systems.

One-Dimensional Corrugation of the h-BN Monolayer on Fe(110)

We report on a new nanopatterned structure represented by a single atomic layer of hexagonal boron nitride (h-BN) forming long periodic waves on the Fe(110) surface. The growth process and the structure of this system are characterized by X-ray absorption (XAS), core-level photoemission spectroscopy (CL PES), low-energy electron microscopy (LEEM), microbeam low-energy electron diffraction (μLEED), and scanning tunneling microscopy (STM). The h-BN monolayer on Fe(110) is periodically corrugated in a wavy fashion with an astonishing degree of long-range order, periodicity of 2.6 nm, and the corrugation amplitude of ∼0.8 Å. The wavy pattern results from a strong chemical bonding between h-BN and Fe in combination with a lattice mismatch in either [111] or [111] direction of the Fe(110) surface. Two primary orientations of h-BN on Fe(110) can be observed corresponding to the possible directions of lattice match between h-BN and Fe(110), with approximately equal area of the boron nitride domains of each orientation.