Andre Lagendijk
Air Products & Chemicals
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MRS Proceedings | 1992
Ivo Raaijmakers; Raymond Nicholas Vrtis; Jack Yang; Seshadri Ramaswami; Andre Lagendijk; David Allen Roberts; Eliot K. Broadbent
Material properties are reported of high quality TiN thin films, deposited by a low temperature (400 – 450 C) and low pressure (10 Torr) metalorganic chemical vapor deposition process using tetrakis(diethylamino)Ti and ammonia. Layer resistivities of less than 200 μΩ cm are achieved in 300 to 500 A thick films. The carbon and oxygen content in the films is found to be low ( Integration of the MOCVD-TiN films in a Ti/TiN/Al-alloy metallization scheme is also reported. The diffusion barrier performance of the MOCVD-TiN layers is found to exceed that of PVD-TiN layers.
Archive | 1990
Andre Lagendijk
Archive | 1993
Andre Lagendijk; Arthur Kenneth Hochberg; David Allen Roberts
Archive | 1993
David Allen Roberts; Diwakar Garg; Andre Lagendijk; Arthur Kenneth Hochberg; Stephen Mark Fine
Archive | 1995
Andre Lagendijk; Damon K. DeBusk
Archive | 1988
Andre Lagendijk; Shantia Riahi
Archive | 1992
Andre Lagendijk; Arthur Kenneth Hochberg; David Allen Roberts
Archive | 1993
Andre Lagendijk; Arthur Kenneth Hochberg; David Allen Roberts
Archive | 1985
Andre Lagendijk; Shantia Riahi
Archive | 1993
Andre Lagendijk; Arthur Kenneth Hochberg; David Allen Roberts