Andrea Giaccherini

Aluminium Electrodeposition from Ionic Liquid: Effect of Deposition Temperature and Sonication †

Since their discovery, ionic liquids (ILs) have attracted a wide interest for their potential use as a medium for many chemical processes, in particular electrochemistry. As electrochemical media they allow the electrodeposition of elements that are impossible to reduce in aqueous media. We have investigated the electrodeposition of aluminium from 1-butyl-3-methyl-imidazolium chloride ((Bmim)Cl)/AlCl3 (40/60 mol %) as concerns the effect of deposition parameters on the quality of the deposits. Thick (20 μm) aluminium coatings were electrodeposited on brass substrates at different temperatures and mixing conditions (mechanical stirring and sonication). These coatings were investigated by means of scanning electron microscope, roughness measurements, and X-ray diffraction to assess the morphology and the phase composition. Finally, electrochemical corrosion tests were carried out with the intent to correlate the deposition parameters to the anti-corrosion properties.

Operando SXRD study of the structure and growth process of Cu2S ultra-thin films

Electrochemical Atomic Layer Deposition (E-ALD) technique has demonstrated to be a suitable process for growing compound semiconductors, by alternating the under-potential deposition (UPD) of the metallic element with the UPD of the non-metallic element. The cycle can be repeated several times to build up films with sub-micrometric thickness. We show that it is possible to grow, by E-ALD, Cu2S ultra-thin films on Ag(111) with high structural quality. They show a well ordered layered crystal structure made on alternating pseudohexagonal layers in lower coordination. As reported in literature for minerals in the Cu-S compositional field, these are based on CuS3 triangular groups, with layers occupied by highly mobile Cu ions. This structural model is closely related to the one of the low chalcocite. The domain size of such films is more than 1000 Å in lateral size and extends with a high crystallinity in the vertical growth direction up to more than 10 nm. E-ALD process results in the growth of highly ordered and almost unstrained ultra-thin films. This growth can lead to the design of semiconductors with optimal transport proprieties by an appropriate doping of the intra metallic layer. The present study enables E-ALD as an efficient synthetic route for the growth of semiconducting heterostructures with tailored properties.

An Integrated Experimental/Theoretical Study of Structurally Related Poly-Thiophenes Used in Photovoltaic Systems.

In this work, a series of eight thiophene-based polymers (exploited as “donors” in bulk heterojunction photovoltaics cells), whose structures were designed to be suitably tuned with the electronic characteristics of the [6,6]-Phenyl C61 butyric acid methyl ester (PCBM), is considered,. The electronic properties of the mono-, di-, trimeric oligomers are reckoned (at the Hartree-Fock and DFT level of the theory) and compared to experimental spectroscopic and electrochemical results. Indeed, electrochemical and spectroscopic results show a systematic difference whose physical nature is assessed and related to the exciton (electron-hole) binding energy (Je,h). The critical comparison of the experimental and theoretical band gaps, i.e., the HOMO-LUMO energy difference, suggests that electrochemical and DFT values are the most suited to being used in the design of a polythiophene-based p-n junction for photovoltaics.

Operando Structural Characterization of the E-ALD Process Ultra-Thin Films Growth

Spanning from nanoelectronics to new solar energy materials, technological development in the recent years requested highly controlled nanostructured surfaces, ultra-thin films, and 2D structured materials. In general, although very favorable from a full life cycle assessment (FLCA) standpoint, electrodeposition hardly allows to obtain the high order required by recent technologies. In particular cases, the electrodeposition enables the deposition of atomic layers by means of surface limited reactions (SLRs). By exploiting SLRs, it is possible to define layer-by-layer deposition scheme of different atomic layers; we refer to these schemes as electrochemical atomic layer deposition (E-ALD) and when the growth of the film is epitaxial with the substrate, the techniques are called electrochemical atomic layer epitaxy (ECALE). Aiming at characterizing structure and growth of materials grown by means of E-ALD, surface analysis techniques apply better. In particular, surface X-ray diffraction (SXRD) with high brilliance synchrotron sources enables the operando structural analysis in electrochemical environment. In recent years, several works on the operando surface characterization by means of SXRD have been reported. Thanks to novelties in the field of operando SXRD experiments, semiconducting systems were studied, such as single and multilayer of CdS and Cu2S.

Effect of Electrode Shape and Flow Conditions on the Electrochemical Detection with Band Microelectrodes

In this work, we report the analysis of the electrochemical detection of electroactive species with band microelectrodes that operate under controlled convection. The study focuses on the determination of the collection efficiency of the analyte as a function of inlet flow velocity and microband geometry (inlaid, bumped and recessed), also providing a straightforward method for the theoretical determination of the lower detection limit. The analysis has been carried out by simulating the dimensionless mass transport with the finite element method, delivering the stationary limiting current density. Simulations have been performed on systems consisting of single and double band electrodes to investigate the trail effect on the electrochemical detection. We show that the obtained dimensionless results can be easily turned into dimensional data, providing a tool for the design of devices. The proposed method is general and can easily be extended to systems with different geometry.

Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at the Silver Electrode

The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin films of bismuth (Bi) compounds. Exploiting the E-ALD, it was possible to obtain highly controlled nanostructured depositions as needed, for the application of these materials for novel electronics (topological insulators), thermoelectrics and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi2Se3 compound on the Ag (111) electrode. Verifying the composition with X-ray Photoelectron Spectroscopy (XPS) showed that, after the first monolayer, the deposition of Se stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. We then investigated the optimal conditions to deposit a single monolayer of metallic Bi directly on the Ag.