Andrea Perinot

Macroscopic and high-throughput printing of aligned nanostructured polymer semiconductors for MHz large-area electronics

High-mobility semiconducting polymers offer the opportunity to develop flexible and large-area electronics for several applications, including wearable, portable and distributed sensors, monitoring and actuating devices. An enabler of this technology is a scalable printing process achieving uniform electrical performances over large area. As opposed to the deposition of highly crystalline films, orientational alignment of polymer chains, albeit commonly achieved by non-scalable/slow bulk alignment schemes, is a more robust approach towards large-area electronics. By combining pre-aggregating solvents for formulating the semiconductor and by adopting a room temperature wired bar-coating technique, here we demonstrate the fast deposition of submonolayers and nanostructured films of a model electron-transporting polymer. Our approach enables directional self-assembling of polymer chains exhibiting large transport anisotropy and a mobility up to 6.4 cm2 V−1 s−1, allowing very simple device architectures to operate at 3.3 MHz. Thus, the proposed deposition strategy is exceptionally promising for mass manufacturing of high-performance polymer circuits.

Fully Solution-Processed n–i–p-Like Perovskite Solar Cells with Planar Junction: How the Charge Extracting Layer Determines the Open-Circuit Voltage

Fully solution-processed direct perovskite solar cells with a planar junction are realized by incorporating a cross-linked [6,6]-phenyl-C61-butyric styryl dendron ester layer as an electron extracting layer. Power conversion efficiencies close to 19% and an open-circuit voltage exceeding 1.1 V with negligible hysteresis are delivered. A perovskite film with superb optoelectronic qualities is grown, which reduces carrier recombination losses and hence increases V oc .

Direct-written polymer field-effect transistors operating at 20 MHz

Printed polymer electronics has held for long the promise of revolutionizing technology by delivering distributed, flexible, lightweight and cost-effective applications for wearables, healthcare, diagnostic, automation and portable devices. While impressive progresses have been registered in terms of organic semiconductors mobility, field-effect transistors (FETs), the basic building block of any circuit, are still showing limited speed of operation, thus limiting their real applicability. So far, attempts with organic FETs to achieve the tens of MHz regime, a threshold for many applications comprising the driving of high resolution displays, have relied on the adoption of sophisticated lithographic techniques and/or complex architectures, undermining the whole concept. In this work we demonstrate polymer FETs which can operate up to 20 MHz and are fabricated by means only of scalable printing techniques and direct-writing methods with a completely mask-less procedure. This is achieved by combining a fs-laser process for the sintering of high resolution metal electrodes, thus easily achieving micron-scale channels with reduced parasitism down to 0.19 pF mm−1, and a large area coating technique of a high mobility polymer semiconductor, according to a simple and scalable process flow.

Self-Aligned Organic Field-Effect Transistors on Plastic with Picofarad Overlap Capacitances and Megahertz Operating Frequencies

Using a combination of nanoimprint lithography, gate-source/drain self-alignment, and gravure and inkjet printing, we fabricate organic field-effect transistors on flexible plastic substrates with gate-source and gate-drain electrode overlap capacitances of COL < 1 pF, equivalent to channel-width normalised capacitances of C*OL = 0.15–0.23 pF mm−1. We compare photopatterned and nanoimprint lithography patterned channels of L ≈ 3.8 μm and L ≈ 800 nm, respectively. The reduction in L was found on average to result in order of magnitude greater switching frequencies. Gravure printing the dielectric (versus photo-patterning) was found to yield an order of magnitude lower overlap capacitance C*OL = 0.03 pF mm−1, at the expense of greater processing variation. Inkjet printed p- and n-type polymeric organic semiconductors were used to fabricate organic-field effect transistors with a peak cutoff frequencies of fS = 9.0 ± 0.3 MHz at VGS = 30 V, and transition frequencies of fT = 3.3 ± 0.2 MHz at VGS = 30 V.

Controlling the functional properties of oligothiophene crystalline nano/microfibers via tailoring of the self-assembling molecular precursors

Oligothiophenes are π‐conjugated semiconducting and fluorescent molecules whose self‐assembly properties are widely investigated for application in organic electronics, optoelectronics, biophotonics, and sensing. Here an approach to the preparation of crystalline oligothiophene nano/microfibers is reported based on the use of a “sulfur overrich” quaterthiophene building block, T4S4 , containing in its covalent network all the information needed to promote the directional, π–π stacking‐driven, self‐assembly of Y‐T4S4‐Y oligomers into fibers with hierarchical supramolecular arrangement from nano‐ to microscale. It is shown that when Y varies from unsubstituted thiophene to thiophene substituted with electron‐withdrawing groups, a wide redistribution of the molecular electronic charge takes place without substantially affecting the aggregation modalities of the oligomer. In this way, a structurally comparable series of fibers is obtained having progressively varying optical properties, redox potentials, photoconductivity, and type of prevailing charge carriers (from p‐ to n‐type). With the aid of density functional theory (DFT) calculations, combined with powder X‐ray diffraction data, a model accounting for the growth of the fibers from molecular to nano‐ and microscale is proposed.