Andreas Korinek

Self-focusing by Ostwald ripening: a strategy for layer-by-layer epitaxial growth on upconverting nanocrystals.

We demonstrate a novel epitaxial layer-by-layer growth on upconverting NaYF(4) nanocrystals (NCs) utilizing Ostwald ripening dynamics tunable both in thickness and composition. Injection of small sacrificial NCs (SNCs) as shell precursors into larger core NCs results in the rapid dissolution of the SNCs and their deposition onto the larger core NCs to yield core-shell structured NCs. Exploiting this NC size dependent dissolution/growth, the shell thickness can be controlled either by manipulating the number of SNCs injected or by successive injection of SNCs. In either of these approaches, the NCs self-focus from an initial bimodal distribution to a unimodal distribution (σ <5%) of core-shell NCs. The successive injection approach facilitates layer-by-layer epitaxial growth without the need for tedious multiple reactions for generating tunable shell thickness, and does not require any control over the injection rate of the SNCs, as is the case for shell growth by precursor injection.

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

We have investigated for the first time the impact of electron overflow on the performance of nanowire light-emitting diodes (LEDs) operating in the entire visible spectral range, wherein intrinsic white light emission is achieved from self-organized InGaN quantum dots embedded in defect-free GaN nanowires on a single chip. Through detailed temperature-dependent electroluminescence and simulation studies, it is revealed that electron leakage out of the device active region is primarily responsible for efficiency degradation in such nanowire devices, which in conjunction with the presence of nonradiative surface recombination largely determines the unique emission characteristics of nanowire light-emitting diodes. We have further demonstrated that electron overflow in nanowire LEDs can be effectively prevented with the incorporation of a p-doped AlGaN electron blocking layer, leading to the achievement of phosphor-free white light-emitting diodes that can exhibit for the first time virtually zero efficiency droop for injection currents up to ~2200 A/cm(2). This study also provides unambiguous evidence that Auger recombination is not the primary mechanism responsible for efficiency droop in GaN-based nanowire light-emitting diodes.

High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes

We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high (~18%-32%) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ~480A/cm2 under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.

Epitaxially stabilized thin films of ε-Fe 2 O 3 (001) grown on YSZ (100)

Epsilon ferrite (ε-Fe2O3) is a metastable phase of iron(III) oxide, intermediate between maghemite and hematite. It has recently attracted interest because of its magnetocrystalline anisotropy, which distinguishes it from the other polymorphs, and results in a gigantic coercive field and a natural ferromagnetic resonance frequency in the THz range. Moreover, it possesses a polar crystal structure, making it a potential ferroelectric, hence a potential multiferroic. Due to the need of size confinement to stabilize the metastable phase, ε-Fe2O3 has been synthesized mainly as nanoparticles. However, to favor integration in devices, and take advantage of its unique functional properties, synthesis as epitaxial thin films is desirable. In this paper, we report the growth of ε-Fe2O3 as epitaxial thin films on (100)-oriented yttrium-stabilized zirconia substrates. Structural characterization outlined the formation of multiple in-plane twins, with two different epitaxial relations to the substrate. Transmission electron microscopy showed how such twins develop in a pillar-like structure from the interface to the surface. Magnetic characterization confirmed the high magnetocrystalline anisotropy of our film and revealed the presence of a secondary phase which was identified as the well-known magnetite. Finally, angular analysis of the magnetic properties revealed how the presence of twins impacts their azimuthal dependence.

Early-Stage Precipitation Phenomena and Composition-Dependent Hardening in Al-Mg-Si-(Cu) Alloys

Al-Mg-Si-(Cu), i.e. AA6xxx, alloys are widely used light alloys which can be effectively strengthened through precipitation hardening. The final microstructure, and thus properties, of these alloys after common artificial aging treatments are largely determined by the composition-dependent nano-scale clustering and precipitation that occur during the earliest stage of aging. Therefore, multi-length scale analysis of the earliest-stage of precipitation can provide critical knowledge in understanding the basis for the microstructural evolution during aging and attaining the desired microstructures and properties. Here, we investigate the effect of alloy composition on the evolution of early-stage clusters and precipitates during aging at 180°C using high resolution transmission electron microscopy. The results map a sequential evolution of clusters with an FCC structure but different morphology/orientation characteristics. GP-zones with structures other than FCC, also form in the early stages of aging. The composition-dependent kinetics of β” phase precipitation and hardening behavior are discussed in light of the results from differential scanning calorimetry experiments, microhardness measurements, and conventional transmission electron microscopy.

Near-infrared emission from mesoporous crystalline germanium

Mesoporous crystalline germanium was fabricated by bipolar electrochemical etching of Ge wafer in HF-based electrolyte. It yields uniform mesoporous germanium layers composed of high density of crystallites with an average size 5-7 nm. Subsequent extended chemical etching allows tuning of crystallites size while preserving the same chemical composition. This highly controllable nanostructure exhibits photoluminescence emission above the bulk Ge bandgap, in the near-infrared range (1095-1360nm) with strong evidence of quantum confinement within the crystallites.

A Recent Look at CANDU Feeder Cracking: High Resolution Transmission Electron Microscopy and Electron Energy Loss Near Edge Structure (ELNES)

The primary heat transport system of modern CANDU® (CANDU is a registered trademark of Atomic Energy of Canada Limited) reactors uses A106B piping (i.e., feeder pipes). Feeder cracking has only affected tight-radius bends at outlet feeders (higher temperature), and cracking is limited to regions with high residual stress suffering from wall-thinning by flow accelerated corrosion. To date, the mechanism of feeder cracking has not been identified. This paper includes high-resolution transmission electron microscopy and electron energy loss near edge structure characterization of inside and outside surface intergranular cracks from ex-service CANDU feeders. Prior to this work, no high resolution characterization has been performed for CANDU feeder cracking. All intergranular cracks show evidence of cementite decomposition, leading to decoration of grain boundaries with amorphous carbon, and carbon diffusion along un-cracked boundaries ahead of crack tips. Sulfur has been found on the oxide-metal interface of all intergranular cracks, but is not observed ahead of the crack tips. Sulfur is believed to be from the breakdown of manganese sulfides during service. The cementite decomposition and breakdown of manganese sulfides are believed to be accelerated in the presence of hydrogen produced from the flow accelerated corrosion. Small (<15 nm) voids are also present ahead of some intergranular crack-tips along the ferrite-ferrite boundaries, indicating that hydrogen enhanced, low temperature creep-cracking, may also contribute to intergranular fracture.