Richard Arès

Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation

Semiconductor nanowaveguides are the key structure for light-guiding nanophotonics applications. Efficient guiding and confinement of single-mode light in these waveguides require high aspect ratio geometries. In these conditions, sidewall verticality becomes crucial. We fabricated such structures using a top-down process combining electron beam lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma etching was a single-step process using a Cl(2)/BCl(3)/Ar gas mixture with various fractions of N(2). Scanning electron microscope (SEM) observations showed that the presence of nitrogen generated the deposition of a passivation layer, which had a significant effect on sidewall slope. Near-ideal vertical sidewalls were obtained over a very narrow range of N(2), allowing the production of extremely high aspect ratios (>32) for 80 nm wide nanowaveguides.

Optical modes at the interface between two dissimilar discrete meta-materials

We have studied theoretically and experimentally the properties of optical surface modes at the hetero-interface between two meta-materials. These meta-materials consisted of two 1D AlGaAs waveguide arrays with different band structures.

Antireflection Coating Design for Triple-Junction III–V/Ge High-Efficiency Solar Cells Using Low Absorption PECVD Silicon Nitride

The design of antireflection coating (ARC) for multijunction solar cells is challenging due to the broadband absorption and the need for current matching of each subcell. Silicon nitride, which is deposited by plasma-enhanced chemical vapor deposition (PECVD) using standard conditions, is widely used in the silicon wafer solar cell industry but typically suffers from absorption in the short-wavelength range. We propose the use of silicon nitride deposited by low-frequency PECVD (LFSiN) optimized for high refractive index and low optical absorption as a part of the ARC design for III–V/Ge triple-junction solar cells. This material can also act as a passivation/encapsulation coating. Simulations show that the SiO

Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices

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Second harmonic generation in AlGaAs photonic wires using low power continuous wave light

/LFSiN double-layer ARC can be very effective in reducing the reflection losses over the wavelength range of the limiting subcell for top subcell-limited, as well as middle subcell-limited, triple-junction solar cells. We also demonstrate that the structure’s performance is stable over expected variations in the layer parameters (thickness and refractive index) in the vicinity of the optimal values.

OBSERVATION OF ONE- AND TWO-DIMENSIONAL DISCRETE SURFACE SPATIAL SOLITONS

A multiple-energy, high fluence, MeV Fe ion implantation process was applied at 83 K to heavily damage a low band gap (0.79 eV) epitaxial InGaAsP layer. Optimal rapid thermal annealing conditions were found and produced a fast photoconductor with high resistivity (up to 2500 Ωcm) and Hall mobility around 400 cm2V−1s−1. Short photocarrier trapping times (0.3 ps – 3 ps) were observed via transient differential reflectivity measurements. Furthermore, photoconductive terahertz devices with coplanar electrodes were fabricated and validated. Under pulsed excitation with a 1550 nm femtosecond fiber laser source, antennas based on Fe-implanted InGaAsP are able to emit broadband radiation exceeding 2 THz. Given such specifications, this new material qualifies as a worthy candidate for an integration into optical terahertz spectrometer designs.

Ultrahigh efficiencies in vertical epitaxial heterostructure architectures

We report modal phase matched (MPM) second harmonic generation (SHG) in high-index contrast AlGaAs sub-micron ridge waveguides, by way of sub-mW continuous wave powers at telecommunication wavelengths. We achieve an experimental normalized conversion efficiency of ~14%/W/cm2, obtained through a careful sub-wavelength design supporting both the phase matching requirement and a significant overlap efficiency. Furthermore, the weak anomalous dispersion, robust fabrication technology and possible geometrical and thermal tuning of the device functionality enable a fully integrated multi-functional chip for several critical areas in telecommunications, including wavelength (time) division multiplexing and quantum entanglement.

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

The recent theoretical predictions and experimental observations of discrete surface solitons propagating along the interface between a one- or two-dimensional continuous medium and a one- or two-dimensional waveguide array are reviewed. These discrete solitons were found in second order (periodically poled lithium niobate) and third order nonlinear media, including AlGaAs, photorefractive media and glass, respectively.

Approaching the Shockley-Queisser limit: General assessment of the main limiting mechanisms in photovoltaic cells

Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ∼1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting volt...

Multijunction Solar Cell Designs Using Silicon Bottom Subcell and Porous Silicon Compliant Membrane

In this letter, we present an effective GaN surface passivation process, which was developed by optimizing the surface chemical pretreatment prior to the PECVD- SiOx deposition. It is demonstrated that the electronic properties of the GaN/SiOx interface are drastically influenced by the surface preparation conditions. Among the used chemicals, we found that KOH/HCl leads to the best GaN/SiOx interface quality. MOS capacitors fabricated using this pretreatment have shown a near ideal capacitance-voltage characteristics, with a good surface potential modulation, small flatband voltage shift, low hysteresis, and no significant frequency dispersion. Using this optimized passivation process, AlGaN/GaN-based MOS-high electron mobility transistors (HEMTs) were fabricated. Electrical characterizations have shown up to four orders of magnitude lower gate leakage current and three orders of magnitude lower off-state current compared with the reference Schottky gate HEMT.