Andrew M. Rappe

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices, and for the coupling of light absorption with other functional properties. In these materials, the strong inversion symmetry breaking that is due to spontaneous electric polarization promotes the desirable separation of photo-excited carriers and allows voltages higher than the bandgap, which may enable efficiencies beyond the maximum possible in a conventional p–n junction solar cell. Ferroelectric oxides are also stable in a wide range of mechanical, chemical and thermal conditions and can be fabricated using low-cost methods such as sol–gel thin-film deposition and sputtering. Recent work has shown how a decrease in ferroelectric layer thickness and judicious engineering of domain structures and ferroelectric–electrode interfaces can greatly increase the current harvested from ferroelectric absorber materials, increasing the power conversion efficiency from about 10−4 to about 0.5 per cent. Further improvements in photovoltaic efficiency have been inhibited by the wide bandgaps (2.7–4 electronvolts) of ferroelectric oxides, which allow the use of only 8–20 per cent of the solar spectrum. Here we describe a family of single-phase solid oxide solutions made from low-cost and non-toxic elements using conventional solid-state methods: [KNbO3]1 − x[BaNi1/2Nb1/2O3 − δ]x (KBNNO). These oxides exhibit both ferroelectricity and a wide variation of direct bandgaps in the range 1.1–3.8 electronvolts. In particular, the x = 0.1 composition is polar at room temperature, has a direct bandgap of 1.39 electronvolts and has a photocurrent density approximately 50 times larger than that of the classic ferroelectric (Pb,La)(Zr,Ti)O3 material. The ability of KBNNO to absorb three to six times more solar energy than the current ferroelectric materials suggests a route to viable ferroelectric semiconductor-based cells for solar energy conversion and other applications.

Dirac semimetal in three dimensions.

We show that the pseudorelativistic physics of graphene near the Fermi level can be extended to three dimensional (3D) materials. Unlike in phase transitions from inversion symmetric topological to normal insulators, we show that particular space groups also allow 3D Dirac points as symmetry protected degeneracies. We provide criteria necessary to identify these groups and, as an example, present ab initio calculations of β-cristobalite BiO(2) which exhibits three Dirac points at the Fermi level. We find that β-cristobalite BiO(2) is metastable, so it can be physically realized as a 3D analog to graphene.

Existence of a photonic band gap in two dimensions

A systematic theoretical investigation is undertaken in order to identify a two‐dimensional periodic dielectric structure that has a complete in‐plane photonic band gap for both polarizations. Of the various structures studied, only a triangular lattice of air columns is found to have the desired band‐gap properties. Microwave transmission experiments are performed to test the theoretical predictions.

Dirac Line Nodes in Inversion-Symmetric Crystals

We propose and characterize a new Z2 class of topological semimetals with a vanishing spin-orbit interaction. The proposed topological semimetals are characterized by the presence of bulk one-dimensional (1D) Dirac line nodes (DLNs) and two-dimensional (2D) nearly flat surface states, protected by inversion and time-reversal symmetries. We develop the Z2 invariants dictating the presence of DLNs based on parity eigenvalues at the parity-invariant points in reciprocal space. Moreover, using first-principles calculations, we predict DLNs to occur in Cu_{3}N near the Fermi energy by doping nonmagnetic transition metal atoms, such as Zn and Pd, with the 2D surface states emerging in the projected interior of the DLNs. This Letter includes a brief discussion of the effects of spin-orbit interactions and symmetry breaking as well as comments on experimental implications.

Hybrid Organic–Inorganic Perovskites (HOIPs): Opportunities and Challenges

The conclusions reached by a diverse group of scientists who attended an intense 2-day workshop on hybrid organic-inorganic perovskites are presented, including their thoughts on the most burning fundamental and practical questions regarding this unique class of materials, and their suggestions on various approaches to resolve these issues.

Ferroelectric Domain Wall Induced Band Gap Reduction and Charge Separation in Organometal Halide Perovskites

Organometal halide perovskites have been intensely studied in the past 5 years, inspired by their certified high photovoltaic power conversion efficiency. Some of these materials are room-temperature ferroelectrics. The presence of switchable ferroelectric domains in methylammonium lead triiodide, CH3NH3PbI3, has recently been observed via piezoresponse force microscopy. Here, we focus on the structural and electronic properties of ferroelectric domain walls in CH3NH3PbX3 (X = Cl, Br, I). We find that organometal halide perovskites can form both charged and uncharged domain walls due to the flexible orientational order of the organic molecules. The electronic band gaps for domain structures possessing 180 and 90° walls are estimated with density functional theory. It is found that the presence of charged domain walls will significantly reduce the band gap by 20-40%, while the presence of uncharged domain walls has no substantial impact on the band gap. We demonstrate that charged domain walls can serve as segregated channels for the motions of charge carriers. These results highlight the importance of ferroelectric domain walls in hybrid perovskites for photovoltaic applications and suggest a possible avenue for device optimization through domain patterning.

Nucleation and growth mechanism of ferroelectric domain-wall motion

The motion of domain walls is critical to many applications involving ferroelectric materials, such as fast high-density non-volatile random access memory. In memories of this sort, storing a data bit means increasing the size of one polar region at the expense of another, and hence the movement of a domain wall separating these regions. Experimental measurements of domain growth rates in the well-established ferroelectrics PbTiO3 and BaTiO3 have been performed, but the development of new materials has been hampered by a lack of microscopic understanding of how domain walls move. Despite some success in interpreting domain-wall motion in terms of classical nucleation and growth models, these models were formulated without insight from first-principles-based calculations, and they portray a picture of a large, triangular nucleus that leads to unrealistically large depolarization and nucleation energies. Here we use atomistic molecular dynamics and coarse-grained Monte Carlo simulations to analyse these processes, and demonstrate that the prevailing models are incorrect. Our multi-scale simulations reproduce experimental domain growth rates in PbTiO3 and reveal small, square critical nuclei with a diffuse interface. A simple analytic model is also proposed, relating bulk polarization and gradient energies to wall nucleation and growth, and thus rationalizing all experimental rate measurements in PbTiO3 and BaTiO3.

Structure and energetics of alkanethiol adsorption on the Au(111) surface

The interaction of thiol molecules with the Au(111) surface was investigated with state-of-the-art first-principles methods. We report theoretical evidence for the existence of a physisorption precursor to chemisorption, in agreement with experiment. The origins of inconsistency in recent studies regarding the adsorption site, geometry, and energetics of CH3S on the Au(111) surface were also investigated. We show that the chemisorption site is between the hollow and bridge sites, with a large molecular tilting angle relative to the surface normal. The molecular structure of the overlayer is coverage dependent, with the molecular tilting angle increasing with decreasing coverage. Increasing chain length up to three carbon atoms affects both the chemisorption energetics and the tilt angle. The inconsistency of tilting angles, reported for the fcc site is found to be a consequence of multiple local minima. The ordered structure of thiol molecules at different coverages was also investigated, confirming the r...

Predicting morphotropic phase boundary locations and transition temperatures in Pb- and Bi-based perovskite solid solutions from crystal chemical data and first-principles calculations

Using data obtained from first-principles calculations, we show that the position of the morphotropic phase boundary (MPB) and transition temperature at MPB in ferroelectric perovskite solutions can be predicted with quantitative accuracy from the properties of the constituent cations. We find that the mole fraction of PbTiO3 at MPB in Pb(B′B″)O3–PbTiO3, BiBO3–PbTiO3, and Bi(B′B″)O3–PbTiO3 exhibits a linear dependence on the ionic size (tolerance factor) and the ionic displacements of the B cations as found by density-functional-theory calculations. This dependence is due to competition between the local repulsion and A-cation displacement alignment interactions. Inclusion of first-principles displacement data also allows accurate prediction of transition temperatures at the MPB. The obtained structure-property correlations are used to predict morphotropic phase boundaries and transition temperatures in as yet unsynthesized solid solutions.

Ferroelectricity in ultrathin perovskite films

We report studies of ferroelectricity in ultrathin perovskite films with realistic electrodes. The results reveal stable ferroelectric states in thin films less than