Fenggong Wang

Ferroelectric Domain Wall Induced Band Gap Reduction and Charge Separation in Organometal Halide Perovskites

Organometal halide perovskites have been intensely studied in the past 5 years, inspired by their certified high photovoltaic power conversion efficiency. Some of these materials are room-temperature ferroelectrics. The presence of switchable ferroelectric domains in methylammonium lead triiodide, CH3NH3PbI3, has recently been observed via piezoresponse force microscopy. Here, we focus on the structural and electronic properties of ferroelectric domain walls in CH3NH3PbX3 (X = Cl, Br, I). We find that organometal halide perovskites can form both charged and uncharged domain walls due to the flexible orientational order of the organic molecules. The electronic band gaps for domain structures possessing 180 and 90° walls are estimated with density functional theory. It is found that the presence of charged domain walls will significantly reduce the band gap by 20-40%, while the presence of uncharged domain walls has no substantial impact on the band gap. We demonstrate that charged domain walls can serve as segregated channels for the motions of charge carriers. These results highlight the importance of ferroelectric domain walls in hybrid perovskites for photovoltaic applications and suggest a possible avenue for device optimization through domain patterning.

First-Principles Calculation of the Bulk Photovoltaic Effect in CH3NH3PbI3 and CH3NH3PbI3–xClx

Hybrid halide perovskites exhibit nearly 20% power conversion efficiency, but the origin of their high efficiency is still unknown. Here, we compute the shift current, a dominant mechanism of the bulk photovoltaic (PV) effect for ferroelectric photovoltaics, in CH₃NH₃PbI₃ and CH₃NH₃PbI(3-x)Cl(x) from first-principles. We find that these materials give approximately three times larger shift current PV response to near-IR and visible light than the prototypical ferroelectric photovoltaic BiFeO₃. The molecular orientations of CH₃NH₃⁺ can strongly affect the corresponding PbI₃ inorganic frame so as to alter the magnitude of the shift current response. Specifically, configurations with dipole moments aligned in parallel distort the inorganic PbI₃ frame more significantly than configurations with near-net-zero dipole, yielding a larger shift current response. Furthermore, we explore the effect of Cl substitution on shift current and find that Cl substitution at the equatorial site induces a larger response than does substitution at the apical site.

Band gap engineering strategy via polarization rotation in perovskite ferroelectrics

We propose a strategy to engineer the band gaps of perovskite oxide ferroelectrics, supported by first principles calculations. We find that the band gaps of perovskites can be substantially reduced by as much as 1.2 eV through local rhombohedral-to-tetragonal structural transition. Furthermore, the strong polarization of the rhombohedral perovskite is largely preserved by its tetragonal counterpart. The B-cation off-center displacements and the resulting enhancement of the antibonding character in the conduction band give rise to the wider band gaps of the rhombohedral perovskites. The correlation between the structure, polarization orientation, and electronic structure lays a good foundation for understanding the physics of more complex perovskite solid solutions and provides a route for the design of photovoltaic perovskite ferroelectrics.

Polarization Dependence of Water Adsorption to CH3NH3PbI3 (001) Surfaces

The instability of organometal halide perovskites when in contact with water is a serious challenge to their feasibility as solar cell materials. Although studies of moisture exposure have been conducted, an atomistic understanding of the degradation mechanism is required. Toward this goal, we study the interaction of water with the (001) surfaces of CH3NH3PbI3 under low and high water concentrations using density functional theory. We find that water adsorption is heavily influenced by the orientation of the methylammonium cations close to the surface. We demonstrate that, depending on methylammonium orientation, the water molecule can infiltrate into the hollow site of the surface and get trapped. Controlling dipole orientation via poling or interfacial engineering could thus enhance its moisture stability. No direct reaction between the water and methylammonium molecules is seen. Furthermore, calculations with an implicit solvation model indicate that a higher water concentration may facilitate degradation through increased lattice distortion.

Materials Design of Visible-Light Ferroelectric Photovoltaics from First Principles

Further improvement of the power conversion efficiencies of conventional perovskite ferroelectric oxides has been strongly impeded by their wide band gaps. Here, we use several band gap engineering strategies to design low band gap ferroelectric materials from first principles. We show that polarization rotation is useful for reducing the band gaps of strongly distorted perovskites. A variety of visible-light ferroelectric solid solutions are designed by combining Zn substitution into KNbO3 with polarization rotation. Alternatively, the band gaps can be reduced by the introduction of low-lying intermediate bands through Bi5+ substitution. With this strategy, two Bi5+-containing visible-light ferroelectric solid solutions are designed, which exhibit comparable bulk photocurrent to that of prototypical ferroelectric oxides, but with lower photon energies, as evidenced by the shift current calculations.

Surface chemically-switchable ultraviolet luminescence from interfacial two-dimensional electron gas

We report intense, narrow line-width, surface chemisorption-activated and reversible ultraviolet (UV) photoluminescence from radiative recombination of the two-dimensional electron gas (2DEG) with photoexcited holes at LaAlO3/SrTiO3. The switchable luminescence arises from an electron transfer-driven modification of the electronic structure via H-chemisorption onto the AlO2-terminated surface of LaAlO3, at least 2 nm away from the interface. The control of the onset of emission and its intensity are functionalities that go beyond the luminescence of compound semiconductor quantum wells. Connections between reversible chemisorption, fast electron transfer, and quantum-well luminescence suggest a new model for surface chemically reconfigurable solid-state UV optoelectronics and molecular sensing.