Andrew Starbuck

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

Control of coherent information via on-chip photonic–phononic emitter–receivers

Rapid progress in integrated photonics has fostered numerous chip-scale sensing, computing and signal processing technologies. However, many crucial filtering and signal delay operations are difficult to perform with all-optical devices. Unlike photons propagating at luminal speeds, GHz-acoustic phonons moving at slower velocities allow information to be stored, filtered and delayed over comparatively smaller length-scales with remarkable fidelity. Hence, controllable and efficient coupling between coherent photons and phonons enables new signal processing technologies that greatly enhance the performance and potential impact of integrated photonics. Here we demonstrate a mechanism for coherent information processing based on travelling-wave photon–phonon transduction, which achieves a phonon emit-and-receive process between distinct nanophotonic waveguides. Using this device, physics—which supports GHz frequencies—we create wavelength-insensitive radiofrequency photonic filters with frequency selectivity, narrow-linewidth and high power-handling in silicon. More generally, this emit-receive concept is the impetus for enabling new signal processing schemes.

Control of integrated micro-resonator wavelength via balanced homodyne locking

We describe and experimentally demonstrate a method for active control of resonant modulators and filters in an integrated photonics platform. Variations in resonance frequency due to manufacturing processes and thermal fluctuations are corrected by way of balanced homodyne locking. The method is compact, insensitive to intensity fluctuations, minimally disturbs the micro-resonator, and does not require an arbitrary reference to lock. We demonstrate long-term stable locking of an integrated filter to a laser swept over 1.25 THz. In addition, we show locking of a modulator with low bit error rate while the chip temperature is varied from 5 to 60° C.

Ultra-low crosstalk, CMOS compatible waveguide crossings for densely integrated photonic interconnection networks.

We explore the design space for optimizing CMOS compatible waveguide crossings on a silicon photonics platform. This paper presents simulated and experimental excess loss and crosstalk suppression data for vertically integrated silicon nitride over silicon-on-insulator waveguide crossings. Experimental results show crosstalk suppression exceeding -49/-44 dB with simulation results as low as -65/-60 dB for the TE/TM mode in a waveguide crossing with a 410 nm vertical gap.

Electronically controlled optical beam-steering by an active phased array of metallic nanoantennas

An optical phased array of nanoantenna fabricated in a CMOS compatible silicon photonics process is presented. The optical phased array is fed by low loss silicon waveguides with integrated ohmic thermo-optic phase shifters capable of 2π phase shift with ∼ 15 mW of applied electrical power. By controlling the electrical power to the individual integrated phase shifters fixed wavelength steering of the beam emitted normal to the surface of the wafer of 8° is demonstrated for 1 × 8 phased arrays with periods of both 6 and 9 μm.

Lightwave Circuits in Lithium Niobate through Hybrid Waveguides with Silicon Photonics

We demonstrate a photonic waveguide technology based on a two-material core, in which light is controllably and repeatedly transferred back and forth between sub-micron thickness crystalline layers of Si and LN bonded to one another, where the former is patterned and the latter is not. In this way, the foundry-based wafer-scale fabrication technology for silicon photonics can be leveraged to form lithium-niobate based integrated optical devices. Using two different guided modes and an adiabatic mode transition between them, we demonstrate a set of building blocks such as waveguides, bends, and couplers which can be used to route light underneath an unpatterned slab of LN, as well as outside the LN-bonded region, thus enabling complex and compact lightwave circuits in LN alongside Si photonics with fabrication ease and low cost.

Integrated control of silicon-photonic micro-resonator wavelength via balanced homodyne locking

We present a new method for active control of optical micro-resonator modulator and filter wavelength that is insensitive to environmental and optical perturbations and readily integrated on-chip. Experimental results demonstrating precise, long-term filter locking are shown.

Infrared rectification in a nanoantenna-coupled metal-oxide-semiconductor tunnel diode

Direct rectification of electromagnetic radiation is a well-established method for wireless power conversion in the microwave region of the spectrum, for which conversion efficiencies in excess of 84% have been demonstrated. Scaling to the infrared or optical part of the spectrum requires ultrafast rectification that can only be obtained by direct tunnelling. Many research groups have looked to plasmonics to overcome antenna-scaling limits and to increase the confinement. Recently, surface plasmons on heavily doped Si surfaces were investigated as a way of extending surface-mode confinement to the thermal infrared region. Here we combine a nanostructured metallic surface with a heavily doped Si infrared-reflective ground plane designed to confine infrared radiation in an active electronic direct-conversion device. The interplay of strong infrared photon-phonon coupling and electromagnetic confinement in nanoscale devices is demonstrated to have a large impact on ultrafast electronic tunnelling in metal-oxide-semiconductor (MOS) structures. Infrared dispersion of SiO2 near a longitudinal optical (LO) phonon mode gives large transverse-field confinement in a nanometre-scale oxide-tunnel gap as the wavelength-dependent permittivity changes from 1 to 0, which leads to enhanced electromagnetic fields at material interfaces and a rectified displacement current that provides a direct conversion of infrared radiation into electric current. The spectral and electrical signatures of the nanoantenna-coupled tunnel diodes are examined under broadband blackbody and quantum-cascade laser (QCL) illumination. In the region near the LO phonon resonance, we obtained a measured photoresponsivity of 2.7 mA W(-1) cm(-2) at -0.1 V.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

PV inverter performance and reliability: What is the role of the IGBT?

The inverter is still considered the weakest link in modern photovoltaic systems. Inverter failure can be classified into three major categories: manufacturing and quality control problems, inadequate design, and electrical component failure. It is often difficult to deconvolve the latter two of these, as electrical components can fail due to inadequate design or as a result of intrinsic defects. The aim of the current work is to utilize the extensive background in both inverter performance testing and component reliability found at Sandia National Laboratories to assess the role of component failures in PV performance and reliability. Although there is no consensus on the least reliable component in a modern inverter system, the IGBT is often blamed for failures and hence this was the first component we studied. A commercially available 600V, 60A, silicon IGBT found in common residential inverters was evaluated under normal and extreme operating conditions with DC and pulsed biasing schemes. Although most of the sample devices were robust even under extreme conditions, a few of the samples failed during operation well within the manufacturer-specified limits. Additionally, we have begun in situ monitoring of IGBTs as well as other components within an operating 700 W, single-phase inverter. The in situ testing will guide future device-level work since it allows us to understand the conditions that are experienced by inverter components in a realistic operating environment.