Aneta Drabińska

Tunable GaN/AlGaN ultraviolet detectors with built-in electric field

We present the optical and the electrical properties of GaN/AlGaN structures that can be used as tunable ultraviolet photodetectors. The photosensitivity spectrum of the structures can be tuned in the range 3.5–3.85 eV by external voltage. The photosensitivity of the sample in the 3.5 eV spectral range increases about 500 times when the reverse bias changes from −2 to −6 V. The effect can be explained by changes in the electric field in the GaN/AlGaN structure. The field is generated by the internal electric polarization and the external bias. We present also a numerical modeling of the electric field, the potential profiles, and the current flow in such structures. Our modeling shows that at low bias a two-dimensional (2D)-electron gas at the AlGaN/GaN interface screens the electric field generated by spontaneous polarization. The lack of the field stops transport of photoexcited holes. The holes that are accumulated on the interface causes fast electron recombination and reduces photocurrent. The extern...

Pinned and unpinned epitaxial graphene layers on SiC studied by Raman spectroscopy

The study of epitaxial graphene layers grown on SiC by two techniques, namely, the traditional Si sublimation method and the recent chemical vapor deposition (CVD) using temperature induced shift of the Raman 2D line, is presented. The measurements of thermal shift rate of 2D line on 4 H-SiC(0001) allowed us to determine notable differences in interaction of graphene with SiC substrate. The obtained results show that graphene layers grown by Si sublimation of 4 H-SiC(0001) are pinned strongly to the substrate. In contrast, the layers of graphene grown on 4 H-SiC(0001) substrates by CVD showed much weaker pinning. It was found that the film consisting of two or three graphene layers grown by CVD was already unpinned and thus showing Raman shift expected for freestanding graphene. The obtained differences in pinning of epitaxial graphene layers are explained in terms of basic growth mechanism differences between these two methods: graphene growth by Si sublimation is a “bottom-up” process and by CVD—a “top-...

Growth Rate and Thickness Uniformity of Epitaxial Graphene

The paper provides a deeper understanding of key-parameters of epitaxial graphene growth techniques on SiC. At 16000C, the graphene layer is continuous and covers a large area of the substrate. Significant differences in the growth rate could be observed for different reactor pressures and the polarity of SiC substrates as well as for the substrate miscut and surface quality. In addition, graphene thickness uniformity and mechanism of ridges creation was examined.

Optical determination of the dopant concentration in the δ-doping layer

Room temperature electroreflectance measurements on δ-doped low-dimensional structures are presented. Previously proposed electroreflectance bias-wavelength mapping is used for characterization of (1) a modulation Si δ-doped pseudomorphic InGaAs/GaAs quantum well and (2) a Sn δ-doped GaAs layer. An electric field above and below the δ-doping plane found from the Fourier transform applied to Franz–Keldysh oscillations was used to find the δ-dopant concentration in investigated structures. The position of the δ-doping plane and a Schottky barrier height are also determined.

Multilayer graphene stacks grown by different methods-thickness measurements by X-ray diffraction, Raman spectroscopy and optical transmission

X-ray diffraction, Raman spectroscopy and Optical absorption estimates of the thickness of graphene multi layer stacks (number of graphene layers) are presented for three different growth techniques. The objective of this work was focused on comparison and reconciliation of the two already widely used methods for thickness estimates (Raman and Absorption) with the calibration of the X-ray method as far as Scherer constant K is concerned and X-ray based Wagner-Aqua extrapolation method.

Optical Transmission of Epitaxial Graphene Layers on SiC in the Visible Spectral Range

Optical transmission and transmission electron microscopy studies of epitaxial graphene structures grown on the carbon terminated face of 4H-SiC(000-1) on-axis substrates are presented. Several samples obtained using different growth conditions were studied. Optical microscope showed regions of micrometer size with different layer number. The exact number of layers was obtained from transmission electron microscope studies. Optical transmission spectra showed no wavelength dependence and allowed us to obtain the average number of graphene layers.

Microwave studies of weak localization and antilocalization in epitaxial graphene

A microwave detection method was applied to study weak localization and antilocalization in epitaxial graphene sheets grown on both polarities of SiC substrates. Both coherence and scattering length values were obtained. The scattering lengths were found to be smaller for graphene grown on C-face of SiC. The decoherence rate was found to depend linearly on temperature, showing the electron-electron scattering mechanism.

Electron scattering in graphene with adsorbed NaCl nanoparticles

In this work, the results of contactless magnetoconductance and Raman spectroscopy measurements performed for a graphene sample after its immersion in NaCl solution were presented. The properties of the immersed sample were compared with those of a non-immersed reference sample. Atomic force microscopy and electron spin resonance experiments confirmed the deposition of NaCl nanoparticles on the graphene surface. A weak localization signal observed using contactless magnetoconductance showed the reduction of the coherence length after NaCl treatment of graphene. Temperature dependence of the coherence length indicated a change from ballistic to diffusive regime in electron transport after NaCl treatment. The main inelastic scattering process was of the electron-electron type but the major reason for the reduction of the coherence length at low temperatures was additional, temperature independent, inelastic scattering. We associate it with spin flip scattering, caused by NaCl nanoparticles present on the graphene surface. Raman spectroscopy showed an increase in the D and D′ bands intensities for graphene after its immersion in NaCl solution. An analysis of the D, D′, and G bands intensities proved that this additional scattering is related to the decoration of vacancies and grain boundaries with NaCl nanoparticles, as well as generation of new on-site defects as a result of the decoration of the graphene surface with NaCl nanoparticles. The observed energy shifts of 2D and G bands indicated that NaCl deposition on the graphene surface did not change carrier concentration, but reduced compressive biaxial strain in the graphene layer.

Electroreflectance investigations of quantum confined Stark effect in GaN quantum wells

In this paper we present room temperature electroreflectance studies of GaN quantum wells (QWs) with different well width. The electroreflectance measurements were performed with external voltage applied to the structure therefore it was possible to tune the electric field inside QW up to its completely screening and furthermore even reversing it. The analysis of QW spectral lines showed the Stark shift dependence on applied voltage and well width reaching about 35 meV for highest voltage and widest well width. It was possible to obtain the condition of zero electric field in QW. Both broadening and amplitude of QW lines are minimal for zero electric field and increases for increasing electric field in QW. The energy transition is maximum for zero electric field and for increasing electric field it decreases due to Stark effect. Neither amplitude and broadening parameter nor energy transition does not depend on the direction of electric field. Only parameter that depends on the direction of electric field in QW is phase of the signal. The analysis of Franz-Keldysh oscillations (FKOs) from AlGaN barriers allowed to calculate the real electric field dependence on applied voltage and therefore to obtain the Stark shift dependence on electric field. The Stark shift reached from −12 meV to −35 meV for 450 kV/cm depending on the well width. This conditions were established for highest forward voltages therefore this is the value of electric field and Stark shift caused only by the intrinsic polarization of nitrides.