Angelica Cecilia

LSO-Based Single Crystal Film Scintillator for Synchrotron-Based Hard X-Ray Micro-Imaging

X-ray detector systems are powerful tools: in combination with tomographic methods they provide volumetric data of samples in a non-destructive manner which is of high interest for, e.g., biology, medicine or materials research. The detector able to provide images with submicrometer spatial resolution frequently consists of a scintillator screen, light microscopy optics and a digital camera. Here, the scintillator converts the X-rays into a visible light image which is projected onto the camera by the light optics. In order to perform high resolution imaging Single Crystal Film (SCF) scintillators 1 mum to 30 mum thin are required due to the limited depth of focus of the microscopy optics. Thin SCFs can be obtained via liquid phase epitaxy (LPE). A drawback is that a detector working with SCFs suffers from low efficiency (2% at 50 keV) owing to their limited thickness. The detective quantum efficiency (DQE) is here mainly limited by the low absorption of X-rays and the light yield in the thin scintillator layer. Performances, i.e absorption, light yield, afterglow of operational systems at the European Synchrotron Radiation Facility (ESRF) using YAG:Ce (Y3Al5O12:Ce), LAG:Eu (Lu3Al5O12:Eu) and GGG:Eu (Gd3Ga5O12:Eu) scintillators will be presented and compared to new LSO:Tb (Lu2SiO5:Tb) scintillators developed in the framework of an European project , . A new concept to improve the efficiency of detection in the 20 keV - 40 keV energy range with 1 mum spatial resolution will be presented. This concept based on multilayer scintillators is realised by the LPE process as well. First results will be illustrated with X-ray images and will demonstrate the absorption efficiency improvement of the X-ray detector. The expected performance is 7 times better than the LAG-based scintillators.

Charge Summing in Spectroscopic X-Ray Detectors With High-Z Sensors

The spectroscopic performance of photon counting detectors is limited by the effects of charge sharing between neighboring pixels and the emission of characteristic X-rays. For these reasons, an event can be either missed or counted more than once. These effects become more and more of a concern when pixel pitches are reduced, and for the technology available so far, this meant that there would always be a trade-off between a high spatial and a high spectral resolution. In this work, we present first measurements obtained with the new Medipix3RX ASIC, which features a network of charge summing circuits establishing a communication between pixels which helps to mitigate these effects. Combined with cadmium telluride sensors, we show that this new technology is successful at improving a detectors spectroscopic capabilities even at pixel pitches as small as 55 μm. At this pitch, we measure an energy response function similar to that observed for a pixel pitch of 165 μm in the absence of a charge summing circuitry. This amounts to an effective reduction of the pixel area by at least one order of magnitude at a comparable energy response. Additionally, we present synchrotron measurements at high X-ray fluxes, where significant pulse pile-up occurs, and provide first experimental evidence for a net benefit when balancing spectroscopic performance and high flux tolerance in charge summing mode.

A versatile indirect detector design for hard X-ray microimaging

Indirect X-ray detectors are of outstanding importance for high resolution imaging, especially at synchrotron light sources: while consisting mostly of components which are widely commercially available, they allow for a broad range of applications in terms of the X-ray energy employed, radiation dose to the detector, data acquisition rate and spatial resolving power. Frequently, an indirect detector consists of a thin-film single crystal scintillator and a high-resolution visible light microscope as well as a camera. In this article, a novel modular-based indirect design is introduced, which offers several advantages: it can be adapted for different cameras, i.e. different sensor sizes, and can be trimmed to work either with (quasi-)monochromatic illumination and the correspondingly lower absorbed dose or with intense white beam irradiation. In addition, it allows for a motorized quick exchange between different magnifications / spatial resolutions. Developed within the European project SCINTAX, it is now commercially available. The characteristics of the detector in its different configurations (i.e. for low dose or for high dose irradiation) as measured within the SCINTAX project will be outlined. Together with selected applications from materials research, non-destructive evaluation and life sciences they underline the potential of this design to make high resolution X-ray imaging widely available.

Performance of a Medipix3RX Spectroscopic Pixel Detector With a High Resistivity Gallium Arsenide Sensor

High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses between a few hundred μm and 1 mm to ensure a high photon detection efficiency. However, for small pixel sizes down to several tens of μm, an effect called charge sharing reduces a detectors spectroscopic performance. The recently developed Medipix3RX readout chip overcomes this limitation by implementing a charge summing circuit, which allows the reconstruction of the full energy information of a photon interaction in a single pixel. In this work, we present the characterization of the first Medipix3RX detector assembly with a 500 μm thick high resistivity, chromium compensated gallium arsenide sensor. We analyze its properties and demonstrate the functionality of the charge summing mode by means of energy response functions recorded at a synchrotron. Furthermore, the imaging properties of the detector, in terms of its modulation transfer functions and signal-to-noise ratios, are investigated. After more than one decade of attempts to establish gallium arsenide as a sensor material for photon counting detectors, our results represent a breakthrough in obtaining detector-grade material. The sensor we introduce is therefore suitable for high resolution X-ray imaging applications.

How spectroscopic x-ray imaging benefits from inter-pixel communication.

Spectroscopic x-ray imaging based on pixellated semiconductor detectors can be sensitive to charge sharing and K-fluorescence, depending on the sensor material used, its thickness and the pixel pitch employed. As a consequence, spectroscopic resolution is partially lost. In this paper, we study a new detector ASIC, the Medipix3RX, that offers a novel feature called charge summing, which is established by making adjacent pixels communicate with each other. Consequently, single photon interactions resulting in multiple hits are almost completely avoided. We investigate this charge summing mode with respect to those of its imaging properties that are of interest in medical physics and benchmark them against the case without charge summing. In particular, we review its influence on spectroscopic resolution and find that the low energy bias normally present when recording energy spectra is dramatically reduced. Furthermore, we show that charge summing provides a modulation transfer function which is almost independent of the energy threshold setting, which is in contrast to approaches common so far. We demonstrate that this property is directly linked to the detective quantum efficiency, which is found to increase by a factor of three or more when the energy threshold approaches the photon energy and when using charge summing. As a consequence, the contrast-to-noise ratio is found to double at elevated threshold levels and the dynamic range increases for a given counter depth. All these effects are shown to lead to an improved ability to perform material discrimination in spectroscopic CT, using iodine and gadolinium contrast agents. Hence, when compared to conventional photon counting detectors, these benefits carry the potential of substantially reducing the imaging dose a patient is exposed to during diagnostic CT examinations.

High-resolution high-efficiency X-ray imaging system based on the in-line Bragg magnifier and the Medipix detector

The performance of a recently developed full-field X-ray micro-imaging system based on an in-line Bragg magnifier is reported. The system is composed of quasi-channel-cut crystals in combination with a Medipix single-photon-counting detector. A theoretical and experimental study of the imaging performance of the crystals-detector combination and a comparison with a standard indirect detector typically used in high-resolution X-ray imaging schemes are reported. The spatial resolution attained by our system is about 0.75 µm, limited only by the current magnification. Compared with an indirect detector system, this system features a better efficiency, signal-to-noise ratio and spatial resolution. The optimal working resolution range of this system is between ∼0.4 µm and 1 µm, filling the gap between transmission X-ray microscopes and indirect detectors. Applications for coherent full-field imaging of weakly absorbing samples are shown and discussed.

Characterization of photon counting pixel detectors based on semi-insulating GaAs sensor material

Hybrid semiconductor pixel detectors are considered of high interest for synchrotron applications like diffraction and imaging experiments. However, at photon energies above 30 keV, high-Z sensor materials have to be used due to the weak absorption of the most commonly used sensor material, for instance silicon wafers with a thickness of a few hundred μm. Besides materials like CdTe and Ge, semi-insulating, chromium compensated SI-GaAs(Cr) proves to be a promising sensor material for applications with X-rays in the mid-energy range up to ~60 keV. In this work, material characterisation of SI-GaAs(Cr) wafers by electrical measurements and synchrotron white beam topography as well as the characterization and application of pixel detector assemblies based on Medipix readout chips bump-bonded to 500 μm thick SI-GaAs(Cr) sensors are presented. The results show a very homogeneous material with high resistivity and good electrical properties of the electrons as well as a very promising imaging performance of the detector assemblies.

In-line Bragg magnifier based on V-shaped germanium crystals

In this work an X-ray imaging system based on a recently developed in-line two-dimensional Bragg magnifier composed of two monolithic V-shaped crystals made of dislocation-free germanium is presented. The channel-cut crystals were used in one-dimensional and in two-dimensional (crossed) configurations in imaging applications and allowed measurement of phase-contrast radiograms both in the edge-enhanced and in the holographic regimes. The measurement of the phase gradient in two orthogonal directions is demonstrated. The effective pixel size attained was 0.17 µm in the one-dimensional configuration and 0.5 µm in the two-dimensional setting, offering a twofold improvement in spatial resolution over devices based on silicon. These results show the potential for applying Bragg magnifiers to imaging soft matter at high resolution with reduced dose owing to the higher efficiency of Ge compared with Si.

Investigation of crystallographic and detection properties of CdTe at the ANKA synchrotron light source

The crystallographic properties of a semiconducting CdTe pixelated sensor were investigated at the ANKA synchrotron facility (KIT, Karlsruhe) by means of back reflection white beam topography and high resolution X-ray diffraction. From the results, several orientation contrast features were identified that could be assigned to small angle grain boundaries of 0.01°. Those structures are disseminated in the whole area of the investigated crystal and form a mosaic structure network of tiled and twisted blocks. The topographic mapping of the sensor was correlated with its X-ray response map. The comparison demonstrates the presence of similar features, proving that the structural quality of the sensor material influences the charge carrier transport and consequently the detector performances.

Potential use of V-channel Ge(220) monochromators in X-ray metrology and imaging

Several ways of tuning a higher asymmetry factor (>10) in V-channel X-ray monochromators, for metrological and imaging applications, were analysed. A more than sixfold intensity increase for compositionally and thermally tuned cases was achieved.