Anil U. Mane

MOCVD of cobalt oxide thin films: dependence of growth, microstructure, and optical properties on the source of oxidation

Thin films of cobalt oxide were deposited on glass substrates by low-pressure chemical vapor deposition using cobalt (II) acetylacetonate as the precursor. The depositions were carried out using two different oxidant gases—(i)

Strongly oriented thin films of

O_2

Co_3O_4

and (ii)

deposited on single-crystal MgO(1 0 0) by low-pressure, low-temperature MOCVD

N_2O

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

, in the temperature range of 375–550C, under otherwise identical conditions, with the expectation that oxygen radicals released by

Metal–organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure

N_2O

A Low-Cost, High Energy-Density Lead/Acid Battery

may alter the CVD process. The crystallinity and phase composition of films were examined by X-ray diffraction and transmission electron microscopy. The surface morphology and microstructure of the films were studied by scanning electron microscopy and atomic force microscopy. It is found that the identity of the oxidant gas affects the phase composition, growth kinetics, uniformity, as well as microstructure, of the films. Electron microscopy shows that growth in

Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition

O_2

CVD of Thin Films of Copper and Cobalt from Different Precursors: Growth Kinetics and Microstructure

ambient results in films containing strongly faceted, uniform-sized grains of

Thin films of VO2 on glass by atomic layer deposition: microstructure and electrical properties

Co_3O_4