K. Shalini

Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition

We report the growth and characterization of gadolinium oxide films deposited on Si(100) and fused quartz in the temperature range of 450–800 °C by a low-pressure metalorganic chemical vapor deposition technique using a

Structural and electrical characterization of erbium oxide films grown on Si(100) by low-pressure metalorganic chemical vapor deposition

\beta

Strongly oriented thin films of

-diketonate complex of gadolinium as the precursor. The x-ray diffractometry study of the films reveals that, irrespective of the growth temperature, the films grown on fused quartz (i.e., an amorphous substrate) and silicon (i.e., a single-crystal substrate) comprise the cubic

Co_3O_4

Gd_2O_3

deposited on single-crystal MgO(1 0 0) by low-pressure, low-temperature MOCVD

phase with a (111) texture. However, the films grown on fused quartz at higher temperatures also show the presence of the monoclinic phase of

Thin films of iron oxide by low pressure MOCVD using a novel precursor: tris(t-butyl-3-oxo-butanoato)iron(III)

Gd_2O_3

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

. The growth of strongly oriented films on fused quartz has been understood on the basis of minimization of the surface energy. The scanning electron microscopy and atomic force microscopy studies reveal that the films grown at or above 525°C are densely packed and grainy. Optical properties of the films, as studied by ultraviolet (UV)-visible spectrophotometry and Fourier transform infrared spectroscopy, are found to depend strongly on the chemical vapor deposition condition. The analyses reveal further that the films grown at or above 500 °C are free of heteroatoms, i.e., C, N, and H. The optical band gap of the films is in the range of 5.0–5.4 eV. Electrical characterization was carried out on

Metal–organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure

Al/Gd_2O_3 /Si

Metalorganic chemical vapor deposition of Cu films from bis(t-butyl-3-oxo-butanoato)copper(II): thermodynamic investigation and experimental verification

metal-insulator-semiconductor structures by capacitance–voltage (C–V) and current–voltage analyses. The effective dielectric constant of the films was in the range of 7–23. The bidirectional C–V characteristics show a counterclockwise hysteresis due to the presence of slow interface traps. A minimum leakage current of

Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100)

4.6X10^{-5} \hspace {2mm} A/cm^2