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Featured researches published by Anirudh Sharma.


Langmuir | 2011

New Insights into the Structure of PAMAM Dendrimer/Gold Nanoparticle Nanocomposites

Lee W. Hoffman; Gunther G. Andersson; Anirudh Sharma; Stephen Clarke; Nicolas H. Voelcker

In this work, we have employed a suite of complementary analytical techniques to shed light on the nanocomposite structures formed during gold nanoparticles (AuNPs) synthesis in the presence of poly(amidoamine) (PAMAM) dendrimers. Nanocomposites of AuNPs and either fourth or eighth generation amine-terminated PAMAM dendrimers (G4 or G8) were prepared. The size distributions of AuNPs and the nanocomposites were determined by transmission electron microscopy. Atomic force microscopy phase imaging and neutral impact collision ion scattering spectroscopy (NICISS) were utilized for the first time to investigate and compare nanocomposite structures formed from G4 and G8. Our results suggest that G4 stabilized the AuNP by capping the AuNP particle surface but that a certain fraction of the gold surface was still barely covered. In contrast, the metal nanoparticle surface was completely covered by G8. In addition, NICISS results provided evidence that nanocomposites deformed when being deposited directly onto a substrate.


ACS Applied Materials & Interfaces | 2017

Poly(4-vinylpyridine): A New Interface Layer for Organic Solar Cells

Anirudh Sharma; Renee Kroon; David A. Lewis; Gunther G. Andersson; Mats R. Andersson

Poly(4-vinylpyridine) (P4VP) was used as a cathode interface layer in inverted organic solar cells (OSCs) fabricated using poly[2,3-bis(3-octyloxyphenyl)quinoxaline-5,8-diyl-alt-thiophene-2,5-diyl] (TQ1) and PC71BM (phenyl C71 butyric acid methyl ester) as the donor and acceptor materials, respectively. We successfully demonstrate that the work function of underlying indium tin oxide (ITO) electrode can be significantly reduced by ∼0.7 eV, after modification of the surface with a thin film of P4VP. Photoconversion efficiency of 4.7% was achieved from OSCs incorporating P4VP interface layer between the ITO and bulk heterojunction (BHJ). Thin P4VP layer, when used to modify ZnO electron transport layer in inverted OSCs, reduced the ZnO work function from 3.7 to 3.4 eV, which resulted in a noteworthy increase in open-circuit voltage from 840 to 890 mV. On simultaneous modification of ZnO with P4VP and optimization of the BHJ morphology by using solvent additive chloronapthalene, photoconversion efficiency of OSCs was significantly increased from 4.6% to 6.3%. The enhanced device parameters are also attributed to an energetically favorable material stratification, as a result of an enrichment of PC71BM toward the P4VP interface.


Chemistry of Materials | 2017

Isothermal Crystallization Kinetics and Time-Temperature-Transformation of the Conjugated Polymer: Poly(3-(2 '-ethyl)hexylthiophene)

Liyang Yu; Emily Davidson; Anirudh Sharma; Mats R. Andersson; Rachel A. Segalman; Christian Müller

Thermal annealing strongly impacts the nano- and microstructure of conjugated polymers. Despite the fundamental importance for the resulting optoelectronic behavior of this class of materials, the underlying crystallization processes have not received the same attention that is encountered in other disciplines of materials science. The question arises whether classical treatment of nucleation and growth phenomena is truly applicable to conjugated polymers? Here, the isothermal crystallization behavior of the conjugated polymer poly(3-(2′-ethyl)hexylthiophene) (P3EHT) is monitored with differential scanning calorimetry (DSC). Avrami analysis reveals growth- and nucleation-limited temperature regimes that are separated by the maximum rate of crystallization. The molecular weight of the polymer is found to strongly influence the absolute rate of crystallization at the same degree of undercooling relative to the melting temperature. A combination of optical microscopy and grazing-incidence wide-angle X-ray scattering (GIWAXS) confirms that the resulting nano- and microstructure strongly correlate with the selected isothermal annealing temperature. Hence, this work establishes that classical nucleation and growth theory can be applied to describe the solidification behavior of the semicrystalline conjugated polymer P3EHT.


Carbon | 2015

Raman spectroscopy study of the transformation of the carbonaceous skeleton of a polymer-based nanoporous carbon along the thermal annealing pathway

Cheng Hu; Saeid Sedghi; Ana Silvestre-Albero; Gunther G. Andersson; Anirudh Sharma; Phillip Pendleton; F. Rodríguez-Reinoso; Katsumi Kaneko; Mark J. Biggs


Physical Chemistry Chemical Physics | 2011

Role of humidity on indium and tin migration in organic photovoltaic devices

Anirudh Sharma; Gunther G. Andersson; David A. Lewis


Solar Energy Materials and Solar Cells | 2011

Effect of indium and tin contamination on the efficiency and electronic properties of organic bulk hetero-junction solar cells

Anirudh Sharma; Scott E. Watkins; David A. Lewis; Gunther G. Andersson


Organic Electronics | 2015

Electronic and chemical properties of ZnO in inverted organic photovoltaic devices

Anirudh Sharma; Joseph B. Franklin; Birendra Singh; Gunther G. Andersson; David A. Lewis


Solar Energy Materials and Solar Cells | 2013

Role of zinc oxide thickness on the photovoltaic performance of laminated organic bulk-heterojunction solar cells

Anirudh Sharma; Mihail Ionescu; Gunther G. Andersson; David A. Lewis


Journal of Materials Chemistry | 2016

Two-in-one: cathode modification and improved solar cell blend stability through addition of modified fullerenes

Zandra George; Yuxin Xia; Anirudh Sharma; Camilla Lindqvist; Gunther G. Andersson; Olle Inganäs; Ellen Moons; Christian Müller; Mats R. Andersson


Applied Surface Science | 2016

Nanoscale heterogeniety and workfunction variations in ZnO thin films

Anirudh Sharma; Maria B. Untch; Jamie Scott Quinton; Rüdiger Berger; Gunther G. Andersson; David A. Lewis

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Renee Kroon

Chalmers University of Technology

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Christian Müller

Chalmers University of Technology

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Desta Antenehe Gedefaw

Chalmers University of Technology

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Ergang Wang

Chalmers University of Technology

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Petri Murto

Chalmers University of Technology

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