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Featured researches published by Anjana Nagpal.


Journal of Crystal Growth | 1996

Growth and characterisation of Hg1 − xCdxTe (0.21 < x < 0.36) epilayers grown from Te-rich solution by the dipping technique

S.C. Gupta; S. Sitharaman; Anjana Nagpal; Madhukar Gautam; L.E.A. Berlouis

Hg1 − xCdxTe (0.21 < x < 0.36) epilayers were grown on 〈111〉 CdTe substrates by liquid phase epitaxy from a supersaturated Te-rich solution by the dipping technique at 440 and 470°C. Mercury vapour loss was accounted for by adding the estimated loss of Hg in the form of HgTe in the Te-rich solution. The physical parameters such as surface morphology, composition, thickness, full width at half maximum (FWHM) of double crystal X-ray diffraction (DCXRD) rocking curve and broadening parameters from electrolyte electroreflectance (EER) are given. The effect of growth rate on the crystalline quality is investigated. It is shown by X-ray diffraction and electrolyte electroreflectance measurements that the quality of an epilayer deteriorates when the epilayers are grown at a cooling rate in excess of 2°C h− 1.


Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics | 1999

Effect of gamma ray and high-energy oxygen ion radiation on electrical and optical properties of MCT epitaxial layers

S. Sitharaman; D. Kanjilal; Shivam Arora; Suprotim Ganguly; Anjana Nagpal; Madhukar Gautam; Rajesh Raman; Shiv Kumar; V. R. Prakash; S. C. Gupta

Hg1-xCdxTe epitaxial layers grown from Te-rich solution have been exposed to Gamma ray radiation up to 650 Grey using Co60 and high energy oxygen radiation at 100Mev. The electrical resistivity, carrier density and Hall mobility values at 77K and IR transmission at 300K have been measured in n,p and compensated epilayers both before and after irradiation. These properties are very much affected by these radiations. In the uncompensated p-type epitaxial layers both types of radiation produced an increase in extrinsic carrier density and a corresponding decrease in Hall mobility. It is observed that both types of radiation have significant effect on the compensated layers and the degree of compensation is greatly reduced by the oxygen irradiation. The 100 Mev oxygen irradiation produced an apparent shift in the bandgap towards shorter wavelength and the absorption below the energy gap is reduced as shown by FTIR measurements, whereas Gamma ray radiation up to the dose 650 Grey did not have any effect on optical properties. These results show the ability of oxygen radiation to passivate the activity of residual impurities or defects.


Emerging OE Technologies, Bangalore, India | 1992

Epitaxial growth from Te rich solution and junction formation in mercury cadmium telluride

A. K. Sridhar; S. C. Gupta; S. Sitharaman; Anjana Nagpal; Madhukar Gautam

Abstract not available.


Journal of Crystal Growth | 2005

Effect of hydrogenation on the electrical and optical properties of CdZnTe substrates and HgCdTe epitaxial layers

S. Sitharaman; R. Raman; L. Durai; Surendra Pal; Madhukar Gautam; Anjana Nagpal; Shiv Kumar; Sudipto Chatterjee; S.C. Gupta


Journal of Crystal Growth | 2006

Effect of substrate dislocations on the Hg in-diffusion in CdZnTe substrates used for HgCdTe epilayer growth

Shiv Kumar; Ashok K. Kapoor; Anjana Nagpal; S. Sharma; D. Verma; A. Kumar; Rajesh Raman; P.K. Basu


international workshop on physics of semiconductor devices | 2002

Investigation of anomalous electrical behaviour in LPE grown undoped Hg1-xCdxTe epilayers

Anjana Nagpal; Shiv Kumar; Sanjeev Sharma; S. C. Gupta


international workshop on physics of semiconductor devices | 2002

Growth and characterization of Hg1-xCdxTe epilayers from Hg-rich solution using LPE

Shiv Kumar; Anjana Nagpal; Sanjeev Sharma; F. R. Chavada; S. C. Gupta


international workshop on physics of semiconductor devices | 2000

Thermal annealing studies of undoped Hg1-xCdxTe epilayers grown by Hg-rich liquid phase epitaxy

F. R. Chavada; A. K. Garg; Shiv Kumar; Anjana Nagpal; Sanjeev Sharma; S. C. Gupta


international workshop on physics of semiconductor devices | 1998

Evaluation of perfection of cadmium telluride and cadmium zinc telluride substrates

K. Lal; V. Kumar; S. Sitharaman; F. R. Chavada; A. K. Garg; Anjana Nagpal; M. Gautam; S. C. Gupta


international workshop on physics of semiconductor devices | 1998

Characterization of mercury cadmium telluride epitaxial films by high resolution X-ray diffraction experiments

S. Niranjana; N. Goswami; V. Kumar; K. Lal; F. R. Chavada; A. K. Garg; S. Sitharaman; Anjana Nagpal; M. Gautam; S. C. Gupta

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Madhukar Gautam

Solid State Physics Laboratory

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Shiv Kumar

Banaras Hindu University

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S. C. Gupta

Banaras Hindu University

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S. Sitharaman

Solid State Physics Laboratory

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S.C. Gupta

Solid State Physics Laboratory

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A. Kumar

Defence Metallurgical Research Laboratory

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Ashok K. Kapoor

Solid State Physics Laboratory

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F. R. Chavada

Solid State Physics Laboratory

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L. Durai

Solid State Physics Laboratory

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