Antonio Vellei | Researchain

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international symposium on power semiconductor devices and ic's | 2015

Critical overcurrent turn-off close to IGBT current saturation

Alexander Philippou; Christian Jaeger; Johannes Georg Laven; Roman Baburske; H.-J. Schulze; Frank Dieter Pfirsch; Franz Josef Niedernostheide; Antonio Vellei; H. Itani

A failure mechanism in the edge termination of a 1200V IGBT during overcurrent turn-off is studied with simulations and verified by experiments. The position of the destruction in the experiment can be correlated to the formation of a critical filament in the simulation. The destruction mechanism is investigated in detail. It is only observed if the IGBT enters its current saturation regime. I.e., the IGBT survives a turn-off from the same current level for an increased gate voltage. It is shown that an IGBT provided with a properly-designed High Dynamic Ruggedness (HDR) edge termination structure [1] is no longer susceptible to the destruction mechanism.

Archive | 2013

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

Johannes Georg Laven; Alexander Philippou; Hans-Joachim Schulze; Christian Jaeger; Roman Baburske; Antonio Vellei

Archive | 2017

CHIP PACKAGE, METHOD OF FORMING A CHIP PACKAGE AND METHOD OF FORMING AN ELECTRICAL CONTACT

Francisco Javier Santos Rodriguez; Michael Huettinger; Johann Gatterbauer; Frank Hille; Michael Bauer; Reimund Engl; Brigitte Ruehle; Antonio Vellei; Jochen Dangelmaier; Werner Kanert; Heinrich Koerner; Joachim Mahler

Archive | 2015