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Dive into the research topics where Antonio Vellei is active.

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Featured researches published by Antonio Vellei.


international symposium on power semiconductor devices and ic's | 2015

Critical overcurrent turn-off close to IGBT current saturation

Alexander Philippou; Christian Jaeger; Johannes Georg Laven; Roman Baburske; H.-J. Schulze; Frank Dieter Pfirsch; Franz Josef Niedernostheide; Antonio Vellei; H. Itani

A failure mechanism in the edge termination of a 1200V IGBT during overcurrent turn-off is studied with simulations and verified by experiments. The position of the destruction in the experiment can be correlated to the formation of a critical filament in the simulation. The destruction mechanism is investigated in detail. It is only observed if the IGBT enters its current saturation regime. I.e., the IGBT survives a turn-off from the same current level for an increased gate voltage. It is shown that an IGBT provided with a properly-designed High Dynamic Ruggedness (HDR) edge termination structure [1] is no longer susceptible to the destruction mechanism.


Archive | 2013

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

Johannes Georg Laven; Alexander Philippou; Hans-Joachim Schulze; Christian Jaeger; Roman Baburske; Antonio Vellei


Archive | 2017

CHIP PACKAGE, METHOD OF FORMING A CHIP PACKAGE AND METHOD OF FORMING AN ELECTRICAL CONTACT

Francisco Javier Santos Rodriguez; Michael Huettinger; Johann Gatterbauer; Frank Hille; Michael Bauer; Reimund Engl; Brigitte Ruehle; Antonio Vellei; Jochen Dangelmaier; Werner Kanert; Heinrich Koerner; Joachim Mahler


Archive | 2015

MOS-Transistor with Separated Electrodes Arranged in a Trench

Antonio Vellei


Archive | 2017

Power Semiconductor Transistor Having Increased Bipolar Amplification

Roman Baburske; Johannes Georg Laven; Hans-Joachim Schulze; Antonio Vellei


Archive | 2016

Bipolar Transistor Device With an Emitter Having Two Types of Emitter Regions

Roman Baburske; Christian Jaeger; Franz Josef Niedernostheide; Hans-Joachim Schulze; Antonio Vellei


Archive | 2016

Semiconductor Device with Auxiliary Structure Including Deep Level Dopants

Hans-Joachim Schulze; Christian Jaeger; Franz Josef Niedernostheide; Roman Baburske; Andre Rainer Stegner; Antonio Vellei


Archive | 2016

HALBLEITERVORRICHTUNG MIT HILFSSTRUKTUR EINSCHLIEßLICH TIEFPEGELDOTIERSTOFFEN

Hans-Joachim Schulze; Christian Jäger; Franz-Josef Niedernostheide; Roman Baburske; Andre Rainer Stegner; Antonio Vellei


Archive | 2015

Grabentransistorbauelement Grave transistor device

Alexander Philippou; Christian Jäger; Frank Dieter Pfirsch; Johannes Georg Laven; Antonio Vellei; Frank Wolter


Archive | 2015

Method of Manufacturing an Insulated Gate Bipolar Transistor with Mesa Sections Between Cell Trench Structures

Johannes Georg Laven; Alexander Philippou; Hans-Joachim Schulze; Christian Jaeger; Roman Baburske; Antonio Vellei

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