Aric W. Sanders

Electrical characterization of single GaN nanowires

In this paper a statistically significant study of 1096 individual GaN nanowire (NW) devices is presented. We have correlated the effects of changing growth parameters for hot-wall chemically-vapour-deposited (HW-CVD) NW sf abricated via the vapour–liquid–solid mechanism. We first describe an optical lithographic method for creating Ohmic contacts to NW field effect transistors with both top and bottom electrostatic gates to characterize carrier density and mobility. Multiprobe measurements show that carrier modulation occurs in the channel and is not a contact effect. We then show that NW fabrication runs with nominally identical growth parameters yield similar electrical results across sample populations of >50 devices. By systematically altering th eg rowth parameters we were able to decrease the average carrier concentration for these as-grown GaN NWs ∼10-fold, from 2.29 × 10 20 to 2.45 × 10 19 cm −3 ,a nd successfully elucidate the parameters that exert the strongest influence on wire quality. Furthermore, this study shows that nitrogen vacancies, and not oxygen impurities, are the dominant intrinsic dopant in HW-CVD GaN NWs.

Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift mobility, surface band bending, and surface capture coefficient for electrons. Samples grown (unintentionally n-type) by nitrogen-plasma-assisted molecular beam epitaxy primarily from two separate growth runs were examined. The results revealed carrier concentration in the range of (3–6)×1016 cm−3 for one growth run, roughly 5×1014–1×1015 cm−3 for the second, and drift mobility in the range of 500–700 cm2/(V s) for both. Nanowires were dispersed onto insulating substrates and contacted forming single-wire, two-terminal structures with typical electrode gaps of ≈3–5 μm. When biased at 1 V bias and illuminated at 360 nm (3.6 mW/cm2) the thinner (≈100 nm diameter) nanowires with the higher background doping showed an abrupt increase in photocurrent from 5 pA (noise level) to 0.1–1 μA. Under the same conditions, thicker (151...

On-chip optical interconnects made with gallium nitride nanowires.

In this Letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising GaN nanowires with light-emitting and photoconductive capabilities. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to a non-native substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device may provide new opportunities for integration of optical interconnects between on-chip electrical subsystems.

MESFETs Made From Individual GaN Nanowires

In this paper, we demonstrate novel MESFETs based on individual GaN nanowires. The Pt/Au Schottky gates exhibited excellent two-terminal Schottky diode rectification behavior. The average effective Schottky barrier height was 0.87 eV, with an average ideality factor of 1.6. In addition, the Schottky gates efficiently modulated the conduction of the nanowires. The threshold gate voltages required for complete pinch off were as small as -2.6 V, and transconductances exceeded 1.4 muS. Subthreshold swings approaching 60 mV/decade and on/off current ratios of up to 5times108 were achieved. These results show that the Schottky gate has the potential to significantly improve the performance of GaN nanowire field-effect devices.

Hidden dynamics in the unfolding of individual bacteriorhodopsin proteins

Pulling apart protein unfolding Elucidating the details of how complex proteins fold is a longstanding challenge. Key insights into the unfolding pathways of diverse proteins have come from single-molecule force spectroscopy (SMFS) experiments in which proteins are literally pulled apart. Yu et al. developed a SMFS technique that could unfold individual bacteriorhodopsin molecules in a native lipid bilayer with 1-µs temporal resolution (see the Perspective by Müller and Gaub). The technique delivered a 100-fold improvement over earlier studies of bacteriorhodopsin and revealed many intermediates not seen before. The authors also observed unfolding and refolding transitions between intermediate states. Science, this issue p. 945; see also p. 907 Mechanical unfolding of a membrane protein reveals previously undetected intermediates and equilibrium refolding. Protein folding occurs as a set of transitions between structural states within an energy landscape. An oversimplified view of the folding process emerges when transiently populated states are undetected because of limited instrumental resolution. Using force spectroscopy optimized for 1-microsecond resolution, we reexamined the unfolding of individual bacteriorhodopsin molecules in native lipid bilayers. The experimental data reveal the unfolding pathway in unprecedented detail. Numerous newly detected intermediates—many separated by as few as two or three amino acids—exhibited complex dynamics, including frequent refolding and state occupancies of <10 μs. Equilibrium measurements between such states enabled the folding free-energy landscape to be deduced. These results sharpen the picture of the mechanical unfolding of membrane proteins and, more broadly, enable experimental access to previously obscured protein dynamics.

Engineering plant cell walls: tuning lignin monomer composition for deconstructable biofuel feedstocks or resilient biomaterials

Advances in genetic manipulation of the biopolymers that compose plant cell walls will facilitate more efficient production of biofuels and chemicals from biomass and lead to specialized biomaterials with tailored properties. Here we investigate several genetic variants of Arabidopsis: the wild type, which makes a lignin polymer of primarily guaiacyl (G) and syringyl (S) monomeric units, the fah1 mutant, which makes lignin from almost exclusively G subunits, and a ferulate 5-hydroxylase (F5H) overexpressing line (C4H:F5H) that makes lignin from S subunits. We employ multiscale, multimodal imaging techniques that reveal the biomass of the C4H:F5H transgenic to be more susceptible to deconstruction by maleic acid treatment than the other variants. Enzymatic saccharification assays of the treated materials show that C4H:F5H transgenic tissue is significantly more digestible than the wild type, while the fah1 mutant is clearly the least digestible of these materials. Finally, we show by contact resonance force microscopy, an atomic force microscopy technique, that F5H overexpression in C4H:F5H transgenic plants significantly reduces the stiffness of the cell walls in the region of the compound middle lamella relative to wild type and fah1.

Optimizing 1-μs-Resolution Single-Molecule Force Spectroscopy on a Commercial Atomic Force Microscope

Atomic force microscopy (AFM)-based single-molecule force spectroscopy (SMFS) is widely used to mechanically measure the folding and unfolding of proteins. However, the temporal resolution of a standard commercial cantilever is 50–1000 μs, masking rapid transitions and short-lived intermediates. Recently, SMFS with 0.7-μs temporal resolution was achieved using an ultrashort (L = 9 μm) cantilever on a custom-built, high-speed AFM. By micromachining such cantilevers with a focused ion beam, we optimized them for SMFS rather than tapping-mode imaging. To enhance usability and throughput, we detected the modified cantilevers on a commercial AFM retrofitted with a detection laser system featuring a 3-μm circular spot size. Moreover, individual cantilevers were reused over multiple days. The improved capabilities of the modified cantilevers for SMFS were showcased by unfolding a polyprotein, a popular biophysical assay. Specifically, these cantilevers maintained a 1-μs response time while eliminating cantilever ringing (Q ≅ 0.5). We therefore expect such cantilevers, along with the instrumentational improvements to detect them on a commercial AFM, to accelerate high-precision AFM-based SMFS studies.

Influences of Substrate Adhesion and Particle Size on the Shape Memory Effect of Polystyrene Particles

Formulations and applications of micro- and nanoscale polymer particles have proliferated rapidly in recent years, yet knowledge of their mechanical behavior has not grown accordingly. In this study, we examine the ways that compressive strain, substrate surface energy, and particle size influence the shape memory cycle of polystyrene particles. Using nanoimprint lithography, differently sized particles are programmed into highly deformed, temporary shapes in contact with substrates of differing surface energies. Atomic force microscopy is used to obtain in situ measurements of particle shape recovery kinetics, and scanning electron microscopy is employed to assess differences in the profiles of particles at the conclusion of the shape memory cycle. Finally, finite element models are used to investigate the growing impact of surface energies at smaller length scales. Results reveal that the influence of substrate adhesion on particle recovery is size-dependent and can become dominating at submicron length scales.

MOSFETs Made From GaN Nanowires With Fully Conformal Cylindrical Gates

We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reverse-bias breakdown voltages exceeded the largest gate voltage tested (-35 V). The nanowire MOSFETs showed complete pinchoff, with threshold voltages between -4 and -12 V. Maximum transconductances exceeded 10 μS, and ON/OFF current ratios higher than 10 8 were measured. Significant gating hysteresis and memory effects were also present, indicative of charge traps. Although further optimization is needed, these results represent a promising step forward in the development of efficient GaN nanowire-based FETs.

Junction Yield Analysis for 10 V Programmable Josephson Voltage Standard Devices

Analysis of the Josephson junction yield in the National Institute of Standards and Technology 10 V Programmable Josephson Voltage Standard (PJVS) has been performed by fabricating and measuring over 25 million Nb/NbxSi1-x/Nb junctions. Using the 265 116 junctions per PJVS device, it was possible to measure Shapiro steps on current voltage curves and then estimate the number of single-junction defects within these long arrays. By comparing the results of a quantum-based measurement to a model simulating junction defects, the quantity and magnitude of a small number of junction defects can be estimated from an array of many thousands of junctions. Understanding the source of junction defects in the fabrication process is important for maximizing yield and uniformity, both of which directly relate to the current margin of the quantized voltage step. We have recently fabricated 18 imperfect but usable PJVS devices and 16 that were free from defects, many with n = 1 Shapiro step margins approximately equal to 2 mA. The best of these wafers had a junction defect density of around 3 in a million.