Arichika Ishida

28.2: 3.5 Inch VGA TFT LCD with System‐On‐Glass Technology for Automotive Applications

We have developed a 3.5 inch VGA TFT LCD with Capacitively Coupled Dot Inversion (CCDI) driving for automotive applications using System-on-Glass Technology (SOG). A drastic reduction in the number of connecting points (one-tenth), low power consumption and high display quality have been achieved compared with conventional a-Si TFT LCDs.

18.4: Novel Gamma Correction Method Using an Advanced Capacitive Coupling Driving

We have developed a LCD panel for mobile-use applications that adjusting each RGB gamma characteristics independently without increasing the scale of peripheral circuit. It has been realized by using the Capacitive Coupling driving method and optimizing the storage capacitances of R, G, and B subpixels independently.

Selective Deposition of Silicon by Mercury Sensitized Photochemical Vapor Deposition

The authors have developed a low-temperature process for selective deposition of silicon by mercury sensitized photochemical vapor deposition (Photo-CVD) without using ultraclean technology. It was found that hydrogen radical pretreatment was required to obtain selective deposition. There was an incubation period for not only SiO2 surface but also Si surface. It was confirmed that mercury sensitized Photo-CVD is a promising method for selective deposition process at low temperature using large-area glass substrate.

The Selective Deposition of a Silicon Film on Hydrogenated Amorphous Silicon by Mercury Sensitized Photochemical Vapor Deposition

The authors have developed a low-temperature process for the first time for the selective deposition of a silicon film on hydrogenated amorphous silicon (a-Si:H) and on silicon nitride (SiNx) surfaces by mercury sensitized photochemical vapor deposition (Photo-CVD). The selective deposition of Si films was able to be achieved by hydrogen radical cleaning for 1 minute prior to the deposition. There were two different incubation periods for the a-Si:H and SiNx surfaces. Selective deposition was obtained by using this difference in the incubation periods between the deposition on an a-Si:H surface and on a SiNx surface. The field effect mobility and the off leakage current for thin film transistor (TFT) of the fabrication by using this selective deposition technique were of the 0.6 cm2 V-1 s-1 and 10-11 A order, respectively. It has been confirmed that photo-CVD is a promising method for the selective deposition process at a low temperature using a large-area glass substrate.