Ariel Ismach

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

Graphenes success has shown that it is possible to create stable, single and few-atom-thick layers of van der Waals materials, and also that these materials can exhibit fascinating and technologically useful properties. Here we review the state-of-the-art of 2D materials beyond graphene. Initially, we will outline the different chemical classes of 2D materials and discuss the various strategies to prepare single-layer, few-layer, and multilayer assembly materials in solution, on substrates, and on the wafer scale. Additionally, we present an experimental guide for identifying and characterizing single-layer-thick materials, as well as outlining emerging techniques that yield both local and global information. We describe the differences that occur in the electronic structure between the bulk and the single layer and discuss various methods of tuning their electronic properties by manipulating the surface. Finally, we highlight the properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications.

Direct chemical vapor deposition of graphene on dielectric surfaces

Direct deposition of graphene on various dielectric substrates is demonstrated using a single-step chemical vapor deposition process. Single-layer graphene is formed through surface catalytic decomposition of hydrocarbon precursors on thin copper films predeposited on dielectric substrates. The copper films dewet and evaporate during or immediately after graphene growth, resulting in graphene deposition directly on the bare dielectric substrates. Scanning Raman mapping and spectroscopy, scanning electron microscopy, and atomic force microscopy confirm the presence of continuous graphene layers on tens of micrometer square metal-free areas. The revealed growth mechanism opens new opportunities for deposition of higher quality graphene films on dielectric materials.

Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography

We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene. Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature. We observed multiplateaus in the drain current-gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs. These effects are attributed to the formation of electronic subbands and a bandgap in GNMs. Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices.

Toward the Controlled Synthesis of Hexagonal Boron Nitride Films

Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.

Fermi velocity engineering in graphene by substrate modification

The Fermi velocity, vF, is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device applications, graphene is viewed as a prototypical system for engineering vF. Indeed, several efforts have succeeded in modifying vF by varying charge carrier concentration, n. Here we present a powerful but simple new way to engineer vF while holding n constant. We find that when the environment embedding graphene is modified, the vF of graphene is (i) inversely proportional to its dielectric constant, reaching vF ~ 2.5×106 m/s, the highest value for graphene on any substrate studied so far and (ii) clearly distinguished from an ordinary Fermi liquid. The method demonstrated here provides a new route toward Fermi velocity engineering in a variety of two-dimensional electron systems including topological insulators.

Hyperspectral nanoscale imaging on dielectric substrates with coaxial optical antenna scan probes

An important goal in nano science is to unlock previously inaccessible physics and dynamics within nanoscale systems by combining the efficient nanoscale field confinement/optical resolution (∼10 nm) of optical antennae and the ultrafast temporal resolution (fs) inherent in optical studies with the capabilities of modern scanning probe techniques. Here we report on a significant step toward this goal using a novel nanofabricated coaxial antenna tip capable of recording useful Raman spectra in ∼50 ms to acquire 256 by 256 pixel images on dielectric substrates with a full spectrum at each pixel.

Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.

The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area synthesis of highly crystalline monolayers with a low density of electronically active defects is imperative. Here, we demonstrate the electrical imaging of dendritic ad-layers and grain boundaries in monolayer molybdenum disulfide (MoS2) grown by a vapor transport technique using microwave impedance microscopy. The micrometer-sized precipitates in our films, which appear as a second layer of MoS2 in conventional height and optical measurements, show ∼ 2 orders of magnitude higher conductivity than that of the single layer. The zigzag grain boundaries, on the other hand, are shown to be more resistive than the crystalline grains, consistent with previous studies. Our ability to map the local electrical properties in a rapid and nondestructive manner is highly desirable for optimizing the growth process of large-scale MoS2 atomic layers.

Modulating the electronic properties along carbon nanotubes via tube-substrate interaction.

We study single wall carbon nanotubes (SWNTs) deposited on quartz. Their Raman spectrum depends on the tube-substrate morphology, and in some cases, it shows that the same SWNT-on-quartz system exhibits a mixture of semiconductor and metal behavior, depending on the orientation between the tube and the substrate. We also address the problem using electric force microscopy and ab initio calculations, both showing that the electronic properties along a single SWNT are being modulated via tube-substrate interaction.

Graphene Synthesis via Magnetic Inductive Heating of Copper Substrates

Scaling graphene growth using an oven to heat large substrates becomes less energy efficient as system size is increased. We report a route to graphene synthesis in which radio frequency (RF) magnetic fields inductively heat metal foils, yielding graphene of quality comparable to or higher than that of current chemical vapor deposition techniques. RF induction heating allows for rapid temperature ramp up/down, with great potential for large scale and rapid manufacturing of graphene with much better energy efficiency. Back-gated field effect transistors on a SiO2/Si substrate showed carrier mobility up to ∼14 000 cm(2) V(-1) s(-1) measured under ambient conditions. Many advantages of RF heating are outlined, and some fundamental aspects of this approach are discussed.

Revealing the planar chemistry of two-dimensional heterostructures at the atomic level

Two-dimensional (2D) atomic crystals and their heterostructures are an intense area of study owing to their unique properties that result from structural planar confinement. Intrinsically, the performance of a planar vertical device is linked to the quality of its 2D components and their interfaces, therefore requiring characterization tools that can reveal both its planar chemistry and morphology. Here, we propose a characterization methodology combining (micro-) Raman spectroscopy, atomic force microscopy and time-of-flight secondary ion mass spectrometry to provide structural information, morphology and planar chemical composition at virtually the atomic level, aimed specifically at studying 2D vertical heterostructures. As an example system, a graphene-on-h-BN heterostructure is analysed to reveal, with an unprecedented level of detail, the subtle chemistry and interactions within its layer structure that can be assigned to specific fabrication steps. Such detailed chemical information is of crucial importance for the complete integration of 2D heterostructures into functional devices.