Armin Moser

Controlled Deposition of Highly Ordered Soluble Acene Thin Films: Effect of Morphology and Crystal Orientation on Transistor Performance

Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to produce a range of morphologies, including oriented needle-like crystals. Structural characterization as well as electrical transistor measurements show that intermediate drying velocities produce the most uniformly aligned films.

Monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors

The mobility of self-assembled monolayer field-effect transistors (SAMFETs) traditionally decreases dramatically with increasing channel length. Recently, however, SAMFETs using liquid-crystalline molecules have been shown to have bulk-like mobilities that are virtually independent of channel length. Here, we reconcile these scaling relations by showing that the mobility in liquid crystalline SAMFETs depends exponentially on the channel length only when the monolayer is incomplete. We explain this dependence both numerically and analytically, and show that charge transport is not affected by carrier injection, grain boundaries or conducting island size. At partial coverage, that is when the monolayer is incomplete, liquid-crystalline SAMFETs thus form a unique model system to study size-dependent conductance originating from charge percolation in two dimensions.

Epitaxial growth of π-stacked perfluoropentacene on graphene-coated quartz.

Chemical-vapor-deposited large-area graphene is employed as the coating of transparent substrates for the growth of the prototypical organic n-type semiconductor perfluoropentacene (PFP). The graphene coating is found to cause face-on growth of PFP in a yet unknown substrate-mediated polymorph, which is solved by combining grazing-incidence X-ray diffraction with theoretical structure modeling. In contrast to the otherwise common herringbone arrangement of PFP in single crystals and “standing” films, we report a π-stacked arrangement of coplanar molecules in “flat-lying” films, which exhibit an exceedingly low π-stacking distance of only 3.07 Å, giving rise to significant electronic band dispersion along the π-stacking direction, as evidenced by ultraviolet photoelectron spectroscopy. Our study underlines the high potential of graphene for use as a transparent electrode in (opto-)electronic applications, where optimized vertical transport through flat-lying conjugated organic molecules is desired.

Solution-Processable Septithiophene Monolayer Transistor

Septithiophene with endgroups designed to form liquid crystalline phases and allows controlled deposition of an electrically connected monolayer. Field effect mobilies mobilities of charge carriers and spectroscopic properties of the monolayer provide evidence of sustainable transport and delocalization of the excitation through intermolecular interactions within the layer.

Interface induced crystal structures of dioctyl-terthiophene thin films.

Temperature dependent structural and morphological investigations on semiconducting dioctyl-terthiophene (DOTT) thin films prepared on silica surfaces reveals the coexistence of surface induce order and distinct crystalline/liquid crystalline bulk polymorphs. X-ray diffraction and scanning force microscopy measurements indicate that at room temperature two polymorphs are present: the surface induced phase grows directly on the silica interface and the bulk phase on top. At elevated temperatures the long-range order gradually decreases, and the crystal G (340 K), smectic F (348 K), and smectic C (360 K) phases are observed. Indexation of diffraction peaks reveals that an up-right standing conformation of DOTT molecules is present within all phases. A temperature stable interfacial layer close to the silica-DOTT interface acts as template for the formation of the different phases. Rapid cooling of the DOTT sample from the smectic C phase to room temperature results in freezing into a metastable crystalline state with an intermediated unit cell between the room temperature crystalline phase and the smectic C phase. The understanding of such interfacial induced phases in thin semiconducting liquid crystal films allows tuning of crystallographic and therefore physical properties within organic thin films.

Substrate‐Induced Crystal Plastic Phase of a Discotic Liquid Crystal

A new phase of a known discotic liquid crystal is observed at the interface with a rigid substrate. The structure of the substrate-induced phase has been characterized by atomic force microscopy, specular X-ray diffraction, and small-angle and wide-angle grazing incidence X-ray diffraction. The substrate-induced phase, which has a thickness of ∼30 nm and a tetragonal symmetry, differs notably from the bulk phase. The occurrence of such phase casts a new light on alignment of discotic liquid crystals.

Temperature stability of the pentacene thin-film phase

This work presents the influence of temperatures above 300 K on the crystal structure and morphology of pentacene thin films. The thermal expansion of the unit cell and the relative amount of different phases are investigated via grazing incidence x-ray diffraction. Geometrical considerations about the specific molecular packing of the thin-film phase explain the anisotropic non-linear expansion. Furthermore, around 480 K, a phase transformation of the thin-film phase to the bulk phase is observed. In contrast, only a weak influence of the temperature on the height distribution of the thin-film phase crystallites is found.

Grazing‐incidence in‐plane X‐ray diffraction on ultra‐thin organic films using standard laboratory equipment

A novel grazing-incidence in-plane X-ray diffraction setup based on a commercial four-circle diffractometer with a sealed-ceramic copper X-ray tube, upgraded with parabolic graded multilayer X-ray optics and a one-dimensional position-sensitive detector, is presented. The high potential of this setup is demonstrated by a phase analysis study of pentacene thin films and the determination of in-plane lattice constants of pentacene mono- and multilayers. The quality of the results compare well to studies performed at synchrotron radiation facilities.

Structure and morphology of an organic/inorganic multilayer stack: An x-ray reflectivity study

The internal morphology and crystallographic properties of a complete organic thin film multilayer stack are characterized via x-ray scattering techniques, atomic force microscopy (AFM), and scanning electron microscopy. The stack consists of the three organic layers – copper(II)phthalocyanine (CuPc), perylene tetracarboxylic bisbenzimidazole (PTCBI), and aluminum-tris(8-hydroxychinolin) (Alq3) – sandwiched between an optically semitransparent gold layer and a top silver electrode. The interface roughness progress is determined by the x-ray reflectivity, which is confirmed by the surface roughness determination via AFM. The crystallographic properties are characterized via x-ray diffraction. The CuPc layer is highly crystalline with preferentially oriented crystallites but forms a rough interface (σRMS = 5.5 nm) toward the PTCBI layer. The PTCBI layer grows with randomly distributed crystallites in a worm-like morphology with an interface roughness of σRMS = 6.4 nm toward the Alq3 layer. The amorphous Alq...

N-type self-assembled monolayer field-effect transistors

Within this work we present the synthesis and applications of a novel material designed for n-type self-assembled monolayer field-effect transistors (SAMFETs). Our novel perylene bisimide based molecule was obtained in six steps and is functionalized with a phosphonic acid linker which enables a covalent fixation on aluminum oxide dielectrics. The organic field-effect transistors (OFETs) were fabricated by submerging predefined transistor substrates in a dilute solution of the molecule under ambient conditions. Investigations showed a thickness of about 3 nm for the organic layer which is coincides to the molecular length. The transistors showed bulk-like electron mobilities up to 10-3 cm2/Vs. Due to the absence of bulk current high on/off-ratios were achieved. An increase of the electron mobility with the channel length and XPS investigations point to a complete coverage of the dielectric with a dense monolayer. In addition, a p-type SAMFET based on a thiophene derivative and our new n-type SAMFET were combined to the first CMOS bias inverter based solely on SAMFETs.