Aron Pekker

Effect of atomic interconnects on percolation in single-walled carbon nanotube thin film networks.

The formation of covalent bonds to single-walled carbon nanotube (SWNT) or graphene surfaces usually leads to a decrease in the electrical conductivity and mobility as a result of the structural rehybridization of the functionalized carbon atoms from sp(2) to sp(3). In the present study, we explore the effect of metal deposition on semiconducting (SC-) and metallic (MT-) SWNT thin films in the vicinity of the percolation threshold and we are able to clearly delineate the effects of weak physisorption, ionic chemisorption with charge transfer, and covalent hexahapto (η(6)) chemisorption on these percolating networks. The results support the idea that for those metals capable of forming bis-hexahapto-bonds, the generation of covalent (η(6)-SWNT)M(η(6)-SWNT) interconnects provides a conducting pathway in the SWNT films and establishes the transition metal bis-hexahapto organometallic bond as an electronically conjugating linkage between graphene surfaces.

Effect of first row transition metals on the conductivity of semiconducting single-walled carbon nanotube networks

We demonstrate the ability of first row transition metals to form electrically conducting interconnects between semiconducting single-walled carbon nanotubes (SWNTs) by constructive rehybridization between sidewall benzene rings as a result of the formation of bis-hexahapto-metal-bonds [(η6-SWNT)M(η6-SWNT)], which bridge adjacent SWNTs. Metal deposition on SWNT films enhances the conductivity by three distinct mechanisms: physisorption of gold leads to the formation of a non-interacting gold film and a monotonic conductivity increase; ionic chemisorption of lithium strongly increases the conductivity due to charge transfer to the SWNTs; covalent chemisorption of first row transition metals leads to an abrupt change in conductivity due to formation of (η6-SWNT)M(η6-SWNT) interconnects.

Networks of Semiconducting SWNTs: Contribution of Midgap Electronic States to the Electrical Transport

Single-walled carbon nanotube (SWNT) thin films provide a unique platform for the development of electronic and photonic devices because they combine the advantages of the outstanding physical properties of individual SWNTs with the capabilities of large area thin film manufacturing and patterning technologies. Flexible SWNT thin film based field-effect transistors, sensors, detectors, photovoltaic cells, and light emitting diodes have been already demonstrated, and SWNT thin film transparent, conductive coatings for large area displays and smart windows are under development. While chirally pure SWNTs are not yet commercially available, the marketing of semiconducting (SC) and metallic (MT) SWNTs has facilitated progress toward applications by making available materials of consistent electronic structure. Nevertheless the electrical transport properties of networks of separated SWNTs are inferior to those of individual SWNTs. In particular, for semiconducting SWNTs, which are the subject of this Account, the electrical transport drastically differs from the behavior of traditional semiconductors: for example, the bandgap of germanium (E = 0.66 eV) roughly matches that of individual SC-SWNTs of diameter 1.5 nm, but in the range 300-100 K, the intrinsic carrier concentration in Ge decreases by more than 10 orders of magnitude while the conductivity of a typical SC-SWNT network decreases by less than a factor of 4. Clearly this weak modulation of the conductivity hinders the application of SC-SWNT films as field effect transistors and photodetectors, and it is the purpose of this Account to analyze the mechanism of the electrical transport leading to the unusually weak temperature dependence of the electrical conductivity of such networks. Extrinsic factors such as the contribution of residual amounts of MT-SWNTs arising from incomplete separation and doping of SWNTs are evaluated. However, the observed temperature dependence of the conductivity indicates the presence of midgap electronic states in the semiconducting SWNTs, which provide a source of low-energy excitations, which can contribute to hopping conductance along the nanotubes following fluctuation induced tunneling across the internanotube junctions, which together dominate the low temperature transport and limit the resistivity of the films. At high temperatures, the intrinsic carriers thermally activated across the bandgap as in a traditional semiconductor became available for band transport. The midgap states pin the Fermi level to the middle of the bandgap, and their origin is ascribed to defects in the SWNT walls. The presence of such midgap states has been reported in connection with scanning tunneling spectroscopy experiments, Coulomb blockade observations in low temperature electrical measurements, selective electrochemical deposition imaging, tip-enhanced Raman spectroscopy, high resolution photocurrent spectroscopy, and the modeling of the electronic density of states associated with various defects. Midgap states are present in conventional semiconductors, but what is unusual in the present context is the extent of their contribution to the electrical transport in networks of semiconducting SWNTs. In this Account, we sharpen the focus on the midgap states in SC-SWNTs, their effect on the electronic properties of SC-SWNT networks, and the importance of these effects on efforts to develop electronic and photonic applications of SC-SWNTs.

Photochemical generation of bis-hexahapto chromium interconnects between the graphene surfaces of single-walled carbon nanotubes

The electrical conductivity of single-walled carbon nanotube (SWNT) networks is strongly enhanced by the high vacuum e-beam deposition of transition metals. In the present communication we demonstrate that it is possible to accomplish the same chemical functionalization reactions at room temperature beginning with simple organometallic precursors. We show that the photochemically induced reactions of solutions of Cr(CO)6, Cr(η6-benzene)(CO)3, and Cr(η6-benzene)2 with thin films of semiconducting, metallic and non-separated SWNT films all lead to strongly enhanced conductivities which produce consistent results for each SWNT type among the three organometallic reagents. We conclude that all three of these reactions lead to the generation of covalent (η6-SWNT)Cr(η6-SWNT) interconnects which provide conducting pathways in the SWNT films and our results broaden the applicability of the transition metal bis-hexahapto-bond as an electronically conjugating linkage between graphene surfaces.

Effect of Lanthanide Metal Complexation on the Properties and Electronic Structure of Single-Walled Carbon Nanotube Films

We spectroscopically analyze the effect of e-beam deposition of lanthanide metals on the electronic structure and conductivities of films of semiconducting (SC) single-walled carbon nanotubes (SWNTs) in high vacuum. We employ near-infrared and Raman spectroscopy to interpret the changes in the electronic structure of SWNTs on exposure to small amounts of the lanthanides (Ln = Sm, Eu, Gd, Dy, Ho, Yb), based on the behavior of the reference metals (M = Li, Cr) which are taken to exemplify ionic and covalent bonding, respectively. The analysis shows that while the lanthanides are more electropositive than the transition metals, in most cases they exhibit similar conductivity behavior which we interpret in terms of the formation of covalent bis-hexahapto bonds [(η(6)-SWNT)M(η(6)-SWNT), where M = La, Nd, Gd, Dy, Ho]. However, only M = Eu, Sm, Yb show the continually increasing conductivity characteristic of Li, and this supports our contention that these metals provide the first examples of mixed covalent-ionic bis-hexahapto bonds [(η(6)-SWNT)M(η(6)-SWNT), where M = Sm, Eu, Yb].