Xiaojuan Tian

Effect of Covalent Chemistry on the Electronic Structure and Properties of Carbon Nanotubes and Graphene

In this Account, we discuss the chemistry of graphitic materials with particular reference to three reactions studied by our research group: (1) aryl radical addition, from diazonium precursors, (2) Diels-Alder pericyclic reactions, and (3) organometallic complexation with transition metals. We provide a unified treatment of these reactions in terms of the degenerate valence and conduction bands of graphene at the Dirac point and the relationship of their orbital coefficients to the HOMO and LUMO of benzene and to the Clar structures of graphene. In the case of the aryl radical addition and the Diels-Alder reactions, there is full rehybridization of the derivatized carbon atoms in graphene from sp(2) to sp(3), which removes these carbon atoms from conjugation and from the electronic band structure of graphene (referred to as destructive rehybridization). The radical addition process requires an electron transfer step followed by the formation of a σ-bond and the creation of a π-radical in the graphene lattice, and thus, there is the potential for unequal degrees of functionalization in the A and B sublattices and the possibility of ferromagnetism and superparamagnetism in the reaction products. With regard to metal functionalization, we distinguish four limiting cases: (a) weak physisorption, (b) ionic chemisorption, in which there is charge transfer to the graphitic structure and preservation of the conjugation and band structure, (c) covalent chemisorption, in which there is strong rehybridization of the graphitic band structure, and (d) covalent chemisorption with formation of an organometallic hexahapto-metal bond that largely preserves the graphitic band structure (constructive rehybridization). The constructive rehybridization that accompanies the formation of bis-hexahapto-metal bonds, such as those in (η(6)-SWNT)Cr(η(6)-SWNT), interconnects adjacent graphitic surfaces and significantly reduces the internanotube junction resistance in single-walled carbon nanotube (SWNT) networks. The conversion of sp(2) hybridized carbon atoms to sp(3) can introduce a band gap into graphene, influence the electronic scattering, and create dielectric regions in a graphene wafer. However, the organometallic hexahapto (η(6)) functionalization of the two-dimensional (2D) graphene π-surface with transition metals provides a new way to modify graphitic structures that does not saturate the functionalized carbon atoms and, by preserving their structural integrity, maintains the delocalization in these extended periodic π-electron systems and offers the possibility of three-dimensional (3D) interconnections between adjacent graphene sheets. These structures may find applications in interconnects, 3D-electronics, organometallic catalysis, atomic spintronics and in the fabrication of new electronic materials.

Anisotropic Thermal and Electrical Properties of Thin Thermal Interface Layers of Graphite Nanoplatelet-Based Composites

Thermal interface materials (TIMs) are crucial components of high density electronics and the high thermal conductivity of graphite makes this material an attractive candidate for such applications. We report an investigation of the in-plane and through-plane electrical and thermal conductivities of thin thermal interface layers of graphite nanoplatelet (GNP) based composites. The in-plane electrical conductivity exceeds its through-plane counterpart by three orders of magnitude, whereas the ratio of the thermal conductivities is about 5. Scanning electron microscopy reveals that the anisotropy in the transport properties is due to the in-plane alignment of the GNPs which occurs during the formation of the thermal interface layer. Because the alignment in the thermal interface layer suppresses the through-plane component of the thermal conductivity, the anisotropy strongly degrades the performance of GNP-based composites in the geometry required for typical thermal management applications and must be taken into account in the development of GNP-based TIMs.

Functionalized Single-Walled Carbon Nanotube-Based Fuel Cell Benchmarked Against US DOE 2017 Technical Targets

Chemically modified single-walled carbon nanotubes (SWNTs) with varying degrees of functionalization were utilized for the fabrication of SWNT thin film catalyst support layers (CSLs) in polymer electrolyte membrane fuel cells (PEMFCs), which were suitable for benchmarking against the US DOE 2017 targets. Use of the optimum level of SWNT -COOH functionality allowed the construction of a prototype SWNT-based PEMFC with total Pt loading of 0.06 mgPt/cm2 - well below the value of 0.125 mgPt/cm2 set as the US DOE 2017 technical target for total Pt group metals (PGM) loading. This prototype PEMFC also approaches the technical target for the total Pt content per kW of power (<0.125 gPGM/kW) at cell potential 0.65 V: a value of 0.15 gPt/kW was achieved at 80°C/22 psig testing conditions, which was further reduced to 0.12 gPt/kW at 35 psig back pressure.

Effect of atomic interconnects on percolation in single-walled carbon nanotube thin film networks.

The formation of covalent bonds to single-walled carbon nanotube (SWNT) or graphene surfaces usually leads to a decrease in the electrical conductivity and mobility as a result of the structural rehybridization of the functionalized carbon atoms from sp(2) to sp(3). In the present study, we explore the effect of metal deposition on semiconducting (SC-) and metallic (MT-) SWNT thin films in the vicinity of the percolation threshold and we are able to clearly delineate the effects of weak physisorption, ionic chemisorption with charge transfer, and covalent hexahapto (η(6)) chemisorption on these percolating networks. The results support the idea that for those metals capable of forming bis-hexahapto-bonds, the generation of covalent (η(6)-SWNT)M(η(6)-SWNT) interconnects provides a conducting pathway in the SWNT films and establishes the transition metal bis-hexahapto organometallic bond as an electronically conjugating linkage between graphene surfaces.

Effect of first row transition metals on the conductivity of semiconducting single-walled carbon nanotube networks

We demonstrate the ability of first row transition metals to form electrically conducting interconnects between semiconducting single-walled carbon nanotubes (SWNTs) by constructive rehybridization between sidewall benzene rings as a result of the formation of bis-hexahapto-metal-bonds [(η6-SWNT)M(η6-SWNT)], which bridge adjacent SWNTs. Metal deposition on SWNT films enhances the conductivity by three distinct mechanisms: physisorption of gold leads to the formation of a non-interacting gold film and a monotonic conductivity increase; ionic chemisorption of lithium strongly increases the conductivity due to charge transfer to the SWNTs; covalent chemisorption of first row transition metals leads to an abrupt change in conductivity due to formation of (η6-SWNT)M(η6-SWNT) interconnects.

Application of Hybrid Fillers for Improving the Through-Plane Heat Transport in Graphite Nanoplatelet-Based Thermal Interface Layers

The in-plane alignment of graphite nanoplatelets (GNPs) in thin thermal interface material (TIM) layers suppresses the though-plane heat transport thus limiting the performance of GNPs in the geometry normally required for thermal management applications. Here we report a disruption of the GNP in-plane alignment by addition of spherical microparticles. The degree of GNP alignment was monitored by measurement of the anisotropy of electrical conductivity which is extremely sensitive to the orientation of high aspect ratio filler particles. Scanning Electron Microscopy images of TIM layer cross-sections confirmed the suppression of the in-plane alignment. The hybrid filler formulations reported herein resulted in a synergistic enhancement of the through-plane thermal conductivity of GNP/Al2O3 and GNP/Al filled TIM layers confirming that the control of GNP alignment is an important parameter in the development of highly efficient GNP and graphene-based TIMs.

Networks of Semiconducting SWNTs: Contribution of Midgap Electronic States to the Electrical Transport

Single-walled carbon nanotube (SWNT) thin films provide a unique platform for the development of electronic and photonic devices because they combine the advantages of the outstanding physical properties of individual SWNTs with the capabilities of large area thin film manufacturing and patterning technologies. Flexible SWNT thin film based field-effect transistors, sensors, detectors, photovoltaic cells, and light emitting diodes have been already demonstrated, and SWNT thin film transparent, conductive coatings for large area displays and smart windows are under development. While chirally pure SWNTs are not yet commercially available, the marketing of semiconducting (SC) and metallic (MT) SWNTs has facilitated progress toward applications by making available materials of consistent electronic structure. Nevertheless the electrical transport properties of networks of separated SWNTs are inferior to those of individual SWNTs. In particular, for semiconducting SWNTs, which are the subject of this Account, the electrical transport drastically differs from the behavior of traditional semiconductors: for example, the bandgap of germanium (E = 0.66 eV) roughly matches that of individual SC-SWNTs of diameter 1.5 nm, but in the range 300-100 K, the intrinsic carrier concentration in Ge decreases by more than 10 orders of magnitude while the conductivity of a typical SC-SWNT network decreases by less than a factor of 4. Clearly this weak modulation of the conductivity hinders the application of SC-SWNT films as field effect transistors and photodetectors, and it is the purpose of this Account to analyze the mechanism of the electrical transport leading to the unusually weak temperature dependence of the electrical conductivity of such networks. Extrinsic factors such as the contribution of residual amounts of MT-SWNTs arising from incomplete separation and doping of SWNTs are evaluated. However, the observed temperature dependence of the conductivity indicates the presence of midgap electronic states in the semiconducting SWNTs, which provide a source of low-energy excitations, which can contribute to hopping conductance along the nanotubes following fluctuation induced tunneling across the internanotube junctions, which together dominate the low temperature transport and limit the resistivity of the films. At high temperatures, the intrinsic carriers thermally activated across the bandgap as in a traditional semiconductor became available for band transport. The midgap states pin the Fermi level to the middle of the bandgap, and their origin is ascribed to defects in the SWNT walls. The presence of such midgap states has been reported in connection with scanning tunneling spectroscopy experiments, Coulomb blockade observations in low temperature electrical measurements, selective electrochemical deposition imaging, tip-enhanced Raman spectroscopy, high resolution photocurrent spectroscopy, and the modeling of the electronic density of states associated with various defects. Midgap states are present in conventional semiconductors, but what is unusual in the present context is the extent of their contribution to the electrical transport in networks of semiconducting SWNTs. In this Account, we sharpen the focus on the midgap states in SC-SWNTs, their effect on the electronic properties of SC-SWNT networks, and the importance of these effects on efforts to develop electronic and photonic applications of SC-SWNTs.

Giant Raman Response to the Encapsulation of Sulfur in Narrow Diameter Single-Walled Carbon Nanotubes

Encapsulation of sulfur in HiPCO-SWNTs leads to large changes in the Raman spectra with the appearance of new peaks at 319, 395, and 715 cm(-1) which originate from the sulfur species within the SWNTs, while the high frequency SWNT bands (ν > 1200 cm(-1)) are decreased in intensity. The encapsulated species also shifts the near-IR interband electronic transitions to lower energy by more than 10%. These effects seem to originate with the van der Waals interaction of the confined sulfur species with the walls of the SWNTs which are not expected to be significant in the case of the previously studied large diameter SWNTs. We suggest that sulfur in the small diameter SWNTs exists as a helical polymeric sulfur chain that enters the SWNT interior in the form of S2 ((3)Σ(g)(-)) molecules which undergo polymerization to linear diradicals.

Effect of Lanthanide Metal Complexation on the Properties and Electronic Structure of Single-Walled Carbon Nanotube Films

We spectroscopically analyze the effect of e-beam deposition of lanthanide metals on the electronic structure and conductivities of films of semiconducting (SC) single-walled carbon nanotubes (SWNTs) in high vacuum. We employ near-infrared and Raman spectroscopy to interpret the changes in the electronic structure of SWNTs on exposure to small amounts of the lanthanides (Ln = Sm, Eu, Gd, Dy, Ho, Yb), based on the behavior of the reference metals (M = Li, Cr) which are taken to exemplify ionic and covalent bonding, respectively. The analysis shows that while the lanthanides are more electropositive than the transition metals, in most cases they exhibit similar conductivity behavior which we interpret in terms of the formation of covalent bis-hexahapto bonds [(η(6)-SWNT)M(η(6)-SWNT), where M = La, Nd, Gd, Dy, Ho]. However, only M = Eu, Sm, Yb show the continually increasing conductivity characteristic of Li, and this supports our contention that these metals provide the first examples of mixed covalent-ionic bis-hexahapto bonds [(η(6)-SWNT)M(η(6)-SWNT), where M = Sm, Eu, Yb].