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Dive into the research topics where Arsalan Pourkabirian is active.

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Featured researches published by Arsalan Pourkabirian.


Nature | 2011

Observation of the dynamical Casimir effect in a superconducting circuit

Christopher Wilson; Göran Johansson; Arsalan Pourkabirian; Michael Roger Andre Simoen; J. R. Johansson; Tim Duty; Franco Nori; Per Delsing

One of the most surprising predictions of modern quantum theory is that the vacuum of space is not empty. In fact, quantum theory predicts that it teems with virtual particles flitting in and out of existence. Although initially a curiosity, it was quickly realized that these vacuum fluctuations had measurable consequences—for instance, producing the Lamb shift of atomic spectra and modifying the magnetic moment of the electron. This type of renormalization due to vacuum fluctuations is now central to our understanding of nature. However, these effects provide indirect evidence for the existence of vacuum fluctuations. From early on, it was discussed whether it might be possible to more directly observe the virtual particles that compose the quantum vacuum. Forty years ago, it was suggested that a mirror undergoing relativistic motion could convert virtual photons into directly observable real photons. The phenomenon, later termed the dynamical Casimir effect, has not been demonstrated previously. Here we observe the dynamical Casimir effect in a superconducting circuit consisting of a coplanar transmission line with a tunable electrical length. The rate of change of the electrical length can be made very fast (a substantial fraction of the speed of light) by modulating the inductance of a superconducting quantum interference device at high frequencies (>10 gigahertz). In addition to observing the creation of real photons, we detect two-mode squeezing in the emitted radiation, which is a signature of the quantum character of the generation process.


Nature Physics | 2015

Probing the quantum vacuum with an artificial atom in front of a mirror

I.-C. Hoi; Anton Frisk Kockum; Lars Tornberg; Arsalan Pourkabirian; Göran Johansson; Per Delsing; Christopher Wilson

Quantum fluctuations of the vacuum are both a surprising and fundamental phenomenon of nature. Understood as virtual photons, they still have a very real impact, for instance, in the Casimir effects and the lifetimes of atoms. Engineering vacuum fluctuations is therefore becoming increasingly important to emerging technologies. Here, we shape vacuum fluctuations using a superconducting circuit analogue of a mirror, creating regions in space where they are suppressed. Moving an artificial atom through these regions and measuring the spontaneous emission lifetime of the atom provides us with the spectral density of the vacuum fluctuations. Using the paradigm of waveguide quantum electrodynamics, we significantly improve over previous studies of the interaction of an atom with its mirror image, observing a spectral density as low as 0.02 quanta, a factor of 50 below the mirrorless result. This demonstrates that we can hide the atom from the vacuum, even though it is exposed in free space.


international microwave symposium | 2017

Cryogenic W-band LNA for ALMA band 2+3 with average noise temperature of 24 K

Yulung Tang; Niklas Wadefalk; Jacob W. Kooi; Joel Schleeh; Giuseppe Moschetti; Per-Åke Nilsson; Arsalan Pourkabirian; Eunjung Cha; Silvia Tuzi; Jan Grahn

A cryogenic low noise amplifier that operates across the E and W-bands, from 65 GHz to 116 GHz, has been developed using 0.1-μm InP HEMT technology. Such wideband performance makes this work suitable for the ALMA telescope where two of its bands, 67–90 GHz of Band 2 and 85–116 GHz of Band 3, can be combined into one. At an ambient temperature of 5.5 K, this W-band LNA demonstrates an average noise temperature of 24.7 K with more than 21 dB gain and +/−3.0 dB gain flatness from 65 GHz to 116 GHz. To the best knowledge of the authors, this combination of bandwidth, gain flatness and noise temperature has not been demonstrated before.


IEEE Transactions on Microwave Theory and Techniques | 2017

Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs

Eunjung Cha; Giuseppe Moschetti; Niklas Wadefalk; Per-Åke Nilsson; Stella Bevilacqua; Arsalan Pourkabirian; J. Piotr Starski; Jan Grahn

We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka- and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50


international conference on indium phosphide and related materials | 2016

Cryogenic low-noise InP HEMTs: A source-drain distance study

Eunjung Cha; Arsalan Pourkabirian; Joel Schleeh; Niklas Wadefalk; Giuseppe Moschetti; J.P. Starski; G. Alestig; J. Halonen; Bengt Nilsson; Per-Åke Nilsson; Jan Grahn

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international microwave symposium | 2017

Cryogenic LNAs for SKA band 2 to 5

Joel Schleeh; Giuseppe Moschetti; Niklas Wadefalk; Eunjung Cha; Arsalan Pourkabirian; G. Alestig; J. Halonen; Bengt Nilsson; Per-Åke Nilsson; Jan Grahn

exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24–40 GHz and a four-stage 28–52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB ± 0.8 dB. To our knowledge, the Ka- and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs.


Physical Review Letters | 2014

Nonequilibrium probing of two-level charge fluctuators using the step response of a single-electron transistor.

Arsalan Pourkabirian; Martin V. Gustafsson; Göran Johansson; John Clarke; Per Delsing

The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 μm. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.


Physical Review B | 2013

Thermal properties of charge noise sources

Martin V. Gustafsson; Arsalan Pourkabirian; Göran Johansson; John Clarke; Per Delsing

Four ultra-low noise cryogenic MMIC LNAs suitable for the Square Kilometer Array (SKA) band 2 to 5 (0.95–13.8 GHz) have been designed, fabricated, packaged and tested. The LNAs are based on 4×50, 8×50 and 16×50 μm HEMTs, designed for stable cryogenic operation, allowing the combination of good noise performance and return loss. The lowest noise temperatures measured in the four bands were 1.0 K, 1.2 K, 1.6 K and 2.6 K, respectively.


Archive | 2012

Activation mechanisms for charge noise

Martin V. Gustafsson; Arsalan Pourkabirian; Göran Johansson; John Clarke; Per Delsing


asia pacific microwave conference | 2015

Cryogenic low noise amplifiers in an InP HEMT MMIC process

Per-Åke Nilsson; Arsalan Pourkabirian; Joel Schleeh; Niklas Wadefalk; J.P. Starski; G. Alestig; J. Halonen; Bengt Nilsson; Herbert Zirath; Jan Grahn

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Jan Grahn

Chalmers University of Technology

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Niklas Wadefalk

Chalmers University of Technology

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Per-Åke Nilsson

Chalmers University of Technology

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Eunjung Cha

Chalmers University of Technology

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Giuseppe Moschetti

Chalmers University of Technology

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Göran Johansson

Chalmers University of Technology

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Joel Schleeh

Chalmers University of Technology

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Per Delsing

Chalmers University of Technology

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Bengt Nilsson

Chalmers University of Technology

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G. Alestig

Chalmers University of Technology

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