Arthur H. Firester

Electron traps and hysteresis in pentacene-based organic thin-film transistors

In the absence of charge storage or slow polarization in the gate dielectric, the hysteresis in the current-voltage (I−V) characteristics of pentacene-based organic thin-film transistors (OTFTs) is dominated by trapped electrons in the semiconductor. The immobile previously stored negative charge requires extra holes to balance it, resulting in the early establishment of the channel and extra drain current. Inferred from I−V characteristics, this simple electrostatic model qualitatively explains memory effects in pentacene-based OTFTs, and was verified by a time domain measurement.

Macroelectronics: large-area flexible electronics for sensors, displays, and other applications

No Abstract Available.

34.4: High Performance CMOS‐on‐Plastic Circuits using Sequential Laterally Solidified Silicon TFTs

We developed a CMOS-on-plastic technology using sequential lateral solidification to form LTPS TFTs. We have achieved unity-gain frequencies ft greater than 250 MHz, with CMOS ring oscillators operating at 100 MHz. To our knowledge these are the highest frequency transistors and circuits ever fabricated directly on plastic.

100 MHz CMOS circuits using sequential laterally solidified silicon thin-film transistors on plastic

We have fabricated CMOS circuits using sequential laterally solidified silicon TFTs on plastic substrates. NMOS devices have unity-gain frequencies greater than 250 MHz, and CMOS ring oscillators operate at 100 MHz. To our knowledge these are the highest performance transistors and the fastest circuits ever fabricated directly on plastic

CMOS-on-Plastic Technology using Sequential Laterally Solidified Silicon Thin-Film Transistors

CMOS circuits are directly fabricated on plastic substrates using a process with a maximum temperature of 300degC. NMOS transistors with 2mum channel lengths have unity-gain frequencies greater than 250MHz, and CMOS ring oscillators operate at 100MHz with a 15V supply

Macroelectronics: a progress report

Significant progress has been made in the development of large area, cost-effective, high performance circuitry on flexible substrates. Several semiconductor and process technologies have been investigated for their potential to achieve the Macroelectronics goals.

Active Matrix Liquid Crystal Display Technologies For Automotive Applications

Liquid crystal displays are beginning to be used for automotive applications. However, so far their use has been limited to relatively simple, low-information content displays. It is anticipated that with the advent of cost effective active matrices, the penetration of liquid crystal displays will be dramatically accelerated. The active matrix will both improve the performance and extend the applicability of LCDs in the automotive environment. It will impact monochrome and full-color displays; direct view and projection displays; and fixed-format alphanumeric and simple graphic displays as well as high resolution graphic displays. This paper will review the electro-optic bases of active matrix liquid crystal displays and the current research, development and commercial status of these displays. The two most promising active matrix technologies are based on low-temperature, amorphous and polycrystalline silicon. Particular emphasis will be placed on specific technical aspects of the amorphous silicon and polycrystalline silicon active matrix technotgies and how they relate to display performance for automotive applications.