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Dive into the research topics where Arun Suresh is active.

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Featured researches published by Arun Suresh.


Applied Physics Letters | 2008

Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

Arun Suresh; John F. Muth

The effects of bias stress on transistor performance are important when considering nontraditional channel materials for thin film transistors. Applying a gate bias stress to indium gallium zinc oxide transparent thin film transistors was found to induce a parallel threshold voltage shift without changing the field effect mobility or the subthreshold gate voltage swing. The threshold voltage change is logarithmically dependent on the duration of the bias stress implying a charge tunneling mechanism resulting in trapped negative charge screening the applied gate voltage.


Applied Physics Letters | 2007

Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors

Arun Suresh; Patrick Wellenius; Anuj Dhawan; John F. Muth

Indium gallium zinc oxide deposited by pulsed laser deposition at room temperature was used as a channel layer to fabricate transparent thin film transistors with good electrical characteristics: field effect mobility of 11cm2V−1s−1 and subthreshold voltage swing of 0.20V∕decade. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-current of ∼10pA and a drain current on/off ratio of ∼5×107. Changing the channel layer thickness was a viable way to vary the threshold voltage. The effect of the gate dielectric on the electrical behavior was also explored.


Applied Physics Letters | 2009

Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

Arun Suresh; Steven Novak; Patrick Wellenius; Veena Misra; John F. Muth

A transparent memory device has been developed based on an indium gallium zinc oxide thin film transistor by incorporating platinum nanoparticles in the gate dielectric stack as the charge storage medium. The transfer characteristics of the device show a large clockwise hysteresis due to electron trapping and are attributed to the platinum nanoparticles. Effect of the gate bias stress (program voltage) magnitude, duration, and polarity on the memory window characteristics has been studied. Charge retention measurements were carried out and a loss of less than 25% of the trapped elec-trons was observed over 104 s indicating promising application as nonvolatile memory.


Applied Physics Letters | 2008

Bright, low voltage europium doped gallium oxide thin film electroluminescent devices

Patrick Wellenius; Arun Suresh; John F. Muth

Europium doped gallium oxide thin film electroluminescent devices with bright, red emission (611nm) and relatively low threshold voltages of 60V were produced using pulsed laser deposition. The use of transparent conducting electrodes of amorphous InGaZnO on transparent aluminum titanium oxide/indium tin oxide/7059 Corning glass substrates resulted in a device that is transparent throughout the visible spectrum. At 100V, with 1kHz excitation, the luminance was 221cd∕m2. The Sawyer-Tower circuit analysis and time dependent emission measurements suggest that the charge trapping at the aluminum titanium oxide/Ga2O3:Eu interface plays an important role in producing efficient emission.


international electron devices meeting | 2007

High performance transparent thin film transistors based on indium gallium zinc oxide as the channel material

Arun Suresh; Patrick Wellenius; John F. Muth

The fabrication of high performance amorphous indium gallium zinc oxide (IGZO) transparent thin film transistors (TTFT) and their bias stress stability is presented. N-channel enhancement mode devices were fabricated with an extracted field effect mobility of ~ 11-15 cm2 V-1s-1, on/off current ratios > 107, subthreshold gate voltage swing of 0.20-0.25 V/decade, low off-state currents and good saturation. Low and tunable threshold voltages of 1-2 V were achieved. We conclude that a charge trapping mechanism at the semiconductor/dielectric interface is responsible for the threshold voltage shift after a gate bias stress. The threshold voltage is recovered when the bias is removed.


IEEE\/OSA Journal of Display Technology | 2009

An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel

Patrick Wellenius; Arun Suresh; Haojun Luo; Leda M. Lunardi; John F. Muth

In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.


Applied Physics Letters | 2007

Planar ZnO ultraviolet modulator

X. Zhang; Anuj Dhawan; Patrick Wellenius; Arun Suresh; John F. Muth

A planar electroabsorption modulator suitable for spatial light modulation has been constructed. The device operates near the band edge of zinc oxide at 3.3eV and is based on broadening and shifting of the unconfined exciton with an externally applied electric field. The ZnO active layer was deposited on an aluminum/titanium oxide dielectric on an indium tin oxide conducting layer on glass. A transparent conductive InGaZnO layer on a spin on glass insulator served as the top contact, allowing high electric fields to be applied transverse to the ZnO layer. The modulator operates at room temperature in transmission mode with +45% modulation at 373nm and −18% modulation at 380nm at 140V applied bias, corresponding to ∼450kV∕cm electric field across the ZnO active layer.


Applied Physics Letters | 2008

Modulating indium gallium zinc oxide transistor characteristics with discrete redox states of molecules embedded in the gate dielectric

Smita Sarkar; Arun Suresh; Frank B. Myers; John F. Muth; Veena Misra

A hybrid inorganic-organic device has been fabricated by incorporating redox active molecules in indium gallium zinc oxide thin film transistors. These devices show a clear modulation of source-drain current characteristics, which is associated with the quantized energy states of the redox active molecules. The molecules show discreet redox peaks in the current characteristics of transistors and a true-molecular-based charge transport has been demonstrated in a completely solid state device.


MRS Proceedings | 2008

An Amorphous IGZO Rare Earth Doped Luminescent Phosphor

Patrick Wellenius; Arun Suresh; John F. Muth

Indium gallium zinc oxide (IGZO) has attracted recent attention as a high electron mobility amorphous material for high performance thin film transistors and subsequent use in active matrix backplanes for flexible displays. In this study, Eu:IGZO thin films were pulsed laser deposited at room temperature onto sapphire substrates and were investigated by cathodoluminescence and optical transmission. Photoluminescence was not observed with above band gap excitation. Thin film electroluminescent (TFEL) devices were also fabricated from these thin films. The thin films and devices demonstrate characteristic europium emission, with the most intense emission at 611 nm corresponding to the 5 D 0 to 7 F 2 transition. Luminescence was observed to increase with increasing oxygen pressure during deposition of the Eu:IGZO thin films and may be related to the free carrier density in the films. The authors believe this to be the first report of an amorphous oxide electroluminescent phosphor.


lasers and electro-optics society meeting | 2007

High Mobility Indium Gallium Zinc Oxide for Transparent Conductive Contacts and Thin Film Transistors

Arun Suresh; Patrick Wellenius; John F. Muth

Thin amorphous films of high electron mobility, optically transparent indium gallium zinc oxide (IGZO) were deposited by pulsed laser deposition. Electrical conductivity was controlled allowing high performance, optically transparent thin film transistors to be fabricated.

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John F. Muth

North Carolina State University

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Patrick Wellenius

North Carolina State University

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Anuj Dhawan

Indian Institute of Technology Delhi

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Veena Misra

North Carolina State University

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Frank B. Myers

North Carolina State University

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Haojun Luo

North Carolina State University

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Leda M. Lunardi

North Carolina State University

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Praveen Gollakota

North Carolina State University

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