Atsushi Sakurai

Development of ALD Precursors for Semiconductor Devices

Scaling down of semiconductor device size has required a several kind of new elements. Recently, Hfbased metal gate has been used instead of the traditional poly silicon. There always are the potential demands for new precursors and we have supply a variety of precursors. For example, Adelmann et al used our rare earth precursors to the gate insulator. Recently, we have announced HMBO or ZMBO (3). Those precursors are designed for providing pure hafnium or zirconium oxide (HfO2 or ZrO2).