Augusto Gutierrez-Aitken

A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth

This paper reports on what is believed to be the highest frequency bipolar voltage-controlled oscillator (VCO) monolithic microwave integrated circuit (MMIC) so far reported. The W-band VCO is based on a push-push oscillator topology, which employs InP HBT technology with peak f/sub T/s and f/sub max/s of 75 and 200 GHz, respectively. The W-band VCO produces a maximum oscillating frequency of 108 GHz and delivers an output power of +0.92 dBm into 50 /spl Omega/. The VCO also obtains a tuning bandwidth of 2.73 GHz or 2.6% using a monolithic varactor. A phase noise of -88 dBc/Hz and -109 dBc/Hz is achieved at 1- and 10-MHz offsets, respectively, and is believed to be the lowest phase noise reported for a monolithic W-band VCO. The push-push VCO design approach demonstrated in this work enables higher VCO frequency operation, lower noise performance, and smaller size, which is attractive for millimeter-wave frequency source applications.

An Ultra-Wideband 7-Bit 5 Gsps ADC Implemented in Submicron InP HBT Technology

An ultra-wideband 7-bit 5 Gsps analog-to-digital converter (ADC), fabricated in a 4-level interconnect, 0.8 um InP HBT technology, is presented. This monolithic ADC achieves 6 effective number of bits (ENoB) Nyquist performance at a sample rate of 5 Gsps. Furthermore, an ENoB performance of greater than 5.5 is maintained at analog input frequencies up to 7.5 GHz. This effective resolution-bandwidth product performance is significantly higher than any other previously reported monolithic ADC with sample rate ges 3 Gsps.

A 44-GHz-high IP3 InP HBT MMIC amplifier for low DC power millimeter-wave receiver applications

This paper reports on what is believed to be the highest IP3/P/sub dc/ power linearity figure of merit achieved from a monolithic microwave integrated circuit (MMIC) amplifier at millimeter-wave frequencies. The 44 GHz amplifier is based on an InP heterojunction bipolar transistor (HBT) technology with f/sub T/s and f/sub max/s of 70 and 200 GHz, respectively. The 44-GHz amplifier design consists of four prematched 1/spl times/l0/spl mu/m/sup 2/ four-finger (40-/spl mu/m/sup 2/) heterojunction bipolar transistor (HBT) cells combined in parallel using a compact /spl lambda//8 four-way microstrip combiner. Over a 44-50-GHz frequency band, the amplifier obtains a gain of 5.5-6 dB and a peak gain of 6.8-7.6 dB under optimum gain bias. At a low bias current of 48 mA and a total dc power of 120 mW, the amplifier obtains a peak IP3 of 34 dBm, which corresponds to an IP3/P/sub dc/ power ratio of 21:1, a factor of two better than previous state-of-the-art MMICs reported in this frequency range. By employing a thin, lightly doped HBT collector epitaxy design tailored for lower voltage and higher IP3, a record IP3/P/sub dc/, power ratio of 42.4:1 was also obtained and is believed to be the highest reported for an MMIC amplifier of any technology. The new high-linearity HBTs have strong implications for millimeter-wave receiver as well as low-voltage wireless applications.

InP HBT transferred substrate amplifiers operating to 600 GHz

We report on two InP transferred-substrate (TS) HBT based terahertz monolithic integrated circuit (TMIC) amplifiers. The amplifiers use 200 nm InP HBTs and benzocyclobutene (BCB) inverted microstrip interconnect. The transferred substrate process removes the InP substrate and transfers the amplifiers to high thermal conductivity SiC substrate. The first amplifier is a nine stage common-emitter design. It has ~9 dB of small signal gain at 521 GHz. The second design is five-stage common-base amplifier. It has demonstrated gain of ~19 dB at 576 GHz. These are first reported TS InP HBT amplifiers above 200 GHz.

Sub-millimeter wave InP technologies and integration techniques

In this work, we describe recent advances in InP HEMT and InP HBT technologies that have led to circuits approaching 1 THz. At lower frequencies, these technologies have demonstrated record performance in terms of noise figure (NF), output power, or power-added efficiency (PAE). On the other hand, CMOS-based technologies are dominating semiconductor industry, because they offer high complexity, yield, and integration density. Recent advances in heterogeneous integration enable the combination of compound semiconductor device technologies with CMOS to create complex, compact, and low weight future systems.

Future technologies for commercial and defense telecommunication electronics

Over the past decade there has been a tremendous shift in the microwave and millimeter wave industry from space and defense applications to the rapidly expanding commercial telecommunications market. The gallium arsenide based MESFET, PHEMT, and HBT technologies have found numerous applications in the wireless cellular handset, mmW LMDS, and fiber-optic telecom areas. First we will discuss the contention that traditional space and defense companies are best positioned to develop the next generation technologies required for leadership in these markets. Secondly we will discuss the advantages of indium phosphide based technologies to next-generation commercial telecommunication products.

InP HBT/Si CMOS-Based 13-Bit 1.33Gsps Digital-to-Analog Converter with >70 dB SFDR

Abstract - Gigahertz-rate Digital-to-Analog Converters (DACs) have become readily available from several commercial vendors but have been unable to achieve >70 dB spurious-free dynamic range (SFDR) performance over a wide bandwidth (≥500MHz). This paper presents the results of a unique, heterogeneously-integrated (InP HBT with 0.18um silicon CMOS), 13-bit 1.33Gsps DAC that achieves >70dB SFDR across a 500MHz bandwidth in the second Nyquist zone (750MHz to 1250MHz).

A High Efficiency and High Linearity 20 GHz InP HBT Monolithic Power Amplifier for Phased Array Applications

A high efficiency and high linearity monolithic power amplifier suitable for 20 GHz phased array applications is presented in this paper. The amplifier demonstrates a 17 (IB linear gain, a maximum CW power of 29.4 dBm (870 mW), and a 37.8% power-added-efficiency. Output power of 23.8 dBm with 15% efficiency is measured at 25 dB noise power ratio (NPR) value. For the power amplifier design, we have utilized a novel sinusoid-to-noise transform technique which uses CW simulations to predict NPR. Good agreement is observed between the simulated NPR values and measured data. The power amplifier has been able to achieve high power and efficiency with high linearity, demonstrating the suitability of the InGaAs/InAlAs/InP HBT production process for phased array applications.

The future of compound semiconductors for aerospace and defense applications

We present an overview of the current state of the art and discuss issues associated with competition and the future of compound semiconductor technology, especially for aerospace and defense applications.

Indium phosphide HEMT and HBT production for microwave and millimeter-wave applications

Indium phosphide HEMT and HBT offer significantly improved performance for microwave and millimeter-wave applications compared to gallium arsenide HEMT and HBT. Both low-noise and power amplifiers benefit from the improved transport characteristics and high transconductance of these devices. Velocium and TRW are transitioning production capability from GaAs to InP products using 100 mm substrates to leverage InPs improved telecommunications performance.