Austin Ying-Kuang Chen

Design and Analysis of a 60-GHz CMOS Doppler Micro-Radar System-in-Package for Vital-Sign and Vibration Detection

This paper presents the first flip-chip-packaged and fully integrated Doppler micro-radar in 90-nm CMOS for noncontact vital-sign and vibration detection. The use of a smaller wavelength compared with previous works achieves the highly compact system for portable devices, and the radar design considerations at 60 GHz are discussed from both system and circuits points of view. The compact 60-GHz core (0.73

A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging

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A flip-chip-packaged and fully integrated 60 GHz CMOS micro-radar sensor for heartbeat and mechanical vibration detections

) provides a 36-dB peak down-conversion gain and transmits a radar signal around 0 dBm at 55 GHz. Quadrature generation at the intermediate frequency stage of the heterodyne receiver gives a power- and area-efficient solution to the null detection point issue, ensuring robust detection. By using single-patch antennas and without a high-power amplifier, the system demonstrates the first-pass success of human vital-sign detection at 0.3 m. The small mechanical vibration with a displacement of 0.2 mm can be detected up to 2 m away. At 60 GHz, target displacement comparable to wavelength results in strong nonlinear phase modulation and increases detection difficulties. A signal-recovery algorithm is proposed to improve the accuracy of vital-sign detection.

Wideband mixed lumped-distributed-element 90° and 180° power splitters on silicon substrate for millimeter-wave applications

This letter presents a low-power linear and wideband two-stage millimeter-wave low-noise amplifier (LNA) fabricated in a low-cost 0.18 ¿m SiGe BiCMOS technology. Design techniques utilized to optimize the gain and NF and to achieve high linearity and wideband at W-band are addressed. The LNA achieves a peak power gain of 14.5 dB at 77 GHz with a 3 dB bandwidth of 14.5 GHz from 69 to 83.5 GHz. The measured NF is 6.9 dB at 77 GHz and is lower than 8 dB from 64 to 81 GHz. Both input and output return losses are better than 11 dB and 17 dB at 77 GHz, respectively. The measured input 1 dB compression point is -11.4 dBm at 77 GHz with low power consumption of only 37 mW.

A Broadband Millimeter-Wave Low-Noise Amplifier in SiGe BiCMOS Technology

A 60 GHz micro-radar in 90 nm CMOS for non-contact vital sign and small vibration detections was designed and tested. A quadrature receiver embedded in the indirect up- and down-conversion architechture solves the null detection point issue and increases the robustness of the millimeter wave system. In the 60 GHz core, lumped-element-modeled passive components are extensively used to achieve a compact layout (0.73 mm2), and a 36 dB down-conversion gain at 55 GHz. Using low-cost single-patch PCB antennas, flip-chip packaging of the CMOS chip demonstrates high level of system integration. First pass success is achieved as the human heartbeat and a small mechanical vibration with a displacement of 20 μm can be detected at 0.3 m away. With a roughly one-tenth patch antenna size compared to previously reported works, the 60 GHz CMOS integrated micro-radar can be readily embedded in various portable devices to detect vary small vibrations and used for many applications.

A 36–80 GHz High Gain Millimeter-Wave Double-Balanced Active Frequency Doubler in SiGe BiCMOS

This paper presents two millimeter-wave lumped-distributed 90deg and 180deg power splitters fabricated in the back-end-of-the-line (BEOL) of a 0.18 mum SiGe BiCMOS technology. The 180deg and 90deg power splitters based on mixed lumped-distributed-element three-port Wilkinson power divider with phase shifters at the outputs are shown to achieve an amplitude balance of better than 0.05 dB and 0.21 dB, respectively, at 77 GHz. The return losses for both power splitters are better than 12 dB from 70 GHz to 80 GHz. The effective areas of the 180deg and 90deg splitters are 240 times 440 mum2 and 220 times 400 mum2, respectively.

An 83-GHz High-Gain SiGe BiCMOS Power Amplifier Using Transmission-Line Current-Combining Technique

A broadband millimeter-wave low-noise amplifier (LNA) operating at V-band (50 GHz to 75 GHz) is presented. The circuit is fabricated with 0.18 mum SiGe BiCMOS technology. The matching networks are synthesized with microstrip transmission lines. The LNA achieves a maximum transducer power gain |S21| of ~16 dB, a noise figure of 6.8 dB at 62 GHz, and a 3-dB bandwidth from 54 GHz to 70 GHz. The output return loss is better than 12 dB from 59 GHz to 72 GHz. The reverse isolation |S12| is better than 40 dB over the 3-dB bandwidth. The LNA draws 9.6 mA from a 2.5 V supply.