Y. Baeyens

Packaged Monolithic Silicon 112-Gb/s Coherent Receiver

Using a Si photonic integrated circuit and separate SiGe transimpedance amplifiers, we created a high-performance dual-polarization, dual-quadrature coherent receiver. It requires only 16.3-dB optical signal-to-noise ratio to receive a 112-Gb/s polarization-division-multiplexed quadrature phase-shift keying signal at a 10-3 bit-error rate.

Monolithically Integrated 40-Wavelength Demultiplexer and Photodetector Array on Silicon

We demonstrated a 40-channel dense-wavelength-division-multiplexed (DWDM) monolithically integrated receiver on silicon, which consists of a silicon nitride (Si3N4)arrayed waveguide grating (AWG) demultiplexer with integrated germanium-on-silicon waveguide photodetectors. Net responsivities from a cleaved standard single-mode fiber to detectors of 0.15 ~ 0.22 A/W are measured, with flattened passbands with 1-dB bandwidth over 60% of the 200-GHz channel spacing. Single-channel operation up to 40 Gb/s is demonstrated with a SiGe transimpedance amplifier.

InP D-HBT IC's for 40 Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/>150 GHz) and breakdown voltage (V/sup bcco/ of about 10 V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeter-wave low phase-noise VCOs up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.

Compact InP-based HBT VCOs with a wide tuning range at W- and D-band

Compact monolithic integrated differential voltage-controlled oscillators (VCOs) operating in W-band were realized using InP-based heterojunction bipolar transistors (HBTs). The oscillators, with a total chip size of 0.6 by 0.35 mm/sup 2/, are based on a balanced Colpitts-type topology with a coplanar transmission-line resonator. By varying the voltage across the base-collector junction of the HBT in the current mirror and by changing the current in the VCO, the oscillation frequency can be tuned between 84 and 106 GHz. At 100 GHz, a differential voltage swing of 400 mV is obtained, which should be sufficient to drive 100 Gb/s digital logic. By combining the balanced outputs of a similar differential VCO in a push-push configuration, a compact source with close to -10 dBm output power and a tuning range between 138 and 150 GHz is obtained.

A 70–100 GHz Direct-Conversion Transmitter and Receiver Phased Array Chipset Demonstrating 10 Gb/s Wireless Link

A transmitter and receiver phased array chipset is demonstrated in the range between 70 and 100 GHz using a 0.18 µm SiGe BiCMOS process with

A 74-GHz bandwidth InAlAs/InGaAs-InP HBT distributed amplifier with 13-dB gain

f_{T}/f_{MAX}

224-Gb/s PDM-16-QAM modulator and receiver based on silicon photonic integrated circuits

of 240/270 GHz. Each chip comprises four phased array elements with distributed calibration memory and calibrated direct up- and down-conversion mixer chain. Each receive channel has a conversion gain of 33 dB and noise figure of < 7 dB from 75–95 GHz. Each transmit channel has a flat saturated output power of > 5 dBm between 70 and 100 GHz. Both transmitter and receiver arrays operate from 1.5 V and 2.5 V power supplies and consume 1 W each. Using a die-on-PCB prototype with integrated antennas, a wireless link operating at 10 Gb/s (using 16-QAM) or 8.75 Gb/s (using 32-QAM) is demonstrated at a distance of 1-meter with a carrier frequency of 88 GHz.

A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output

To date, distributed amplifiers based on heterojunction bipolar transistors (HBTs) have consistently shown lower gain-bandwidth products than their high electron mobility transistor (HEMT) counterparts. By using improved design techniques, we report a single-stage distributed amplifier with 13-dB gain and 74 GHz 3-dB bandwidth, based on InAlAs/InGaAs-InP HBTs with 160-GHz fT and 140-GHz fmax. The high gain and bandwidth results in a gain-bandwidth product of 330 GHz, which is, to our knowledge, the highest reported for HBT-based amplifiers and rivals that of the best InP HEMT distributed amplifiers with e-beam written gate of 0.1-0.15 μm dimension.

Clock and data recovery IC for 40-Gb/s fiber-optic receiver

We demonstrate a coherent modulator and a receiver based on monolithically-integrated silicon photonic circuits, capable of modulating and detecting 224-Gb/s polarization-division-multiplexed 16-QAM. The high-degree photonic integration promises small-form-factor and low-power transceivers for future coherent systems.

A Low-Power Linear SiGe BiCMOS Low-Noise Amplifier for Millimeter-Wave Active Imaging

A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13/spl mu/m SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.