Avinash S. Dive

Study of Opto-Electronic Properties of Copper Sulphide Thin Film Grown by Chemical Bath Deposition Technique for Electronic Device Application

Cu2S Thin Film have been synthesized by simple and economic solution growth technique onto silica glass substrate with bath temperature at 40°C for an hour. Optical, properties of the prepared Thin Films were investigated by UV-Visible Spectrophotometer and Electrical properties of the prepared Thin Films were investigated by I-V Measurement System. The optical band gap was calculated by plotting Energy (hν) versus (αhν)2 and it was found to be 2.315 eV which is in very good agreement with the reported values. The semiconducting nature of the film has been confirmed from I-V Measurement curve which has shown ohmic nature in dark condition. Surface morphology have been studied by Scanning Electron Microscopy which revealed entire substrate surface was covered with uniform deposition which contains irregular shaped grains are uniformly distributed.

One step synthesis of kestarite Cu2ZnSnS4 thin film by simple and economic chemical bath deposition method

Nanostructured Cu2ZnSnS4 (CZTS) Kesterite thin film has been synthesized by inexpensive chemical bath deposition method in one step on glass substrate. Structural, optical and electrical properties of as grown Kesterite CZTS thin film have been investigated. The Kesterite structure of the CZTS thin film has been confirmed by XRD. Whereas polycrystalline nature of the film has been confirmed from the concentric ring pattern obtained from TEM–SAED. Kesterite CZTS film shows higher absorption in visible region with band gap Eg =1.68 eV. The obtained band gap is in the range of optimum value of solar spectrum for solar radiation, results in higher absorption of light. I-V measurement in dark and under illumination of light (200 W/cm2) reveals high photocurrent in dark as well as in light. The calculated photosensitivity and photoresponsivity were 52 % and 16.9 µA/W respectively.

Synthesis and photosensor study of as-grown CuZnO thin film by facile chemical bath deposition

We have successfully deposited CuZnO thin film on a glass substrate by facile chemical bath deposition method at 85 °C for 1 hr. Structural, topographical, Optical and Electrical properties of the prepared Thin Films were investigated by XRD, Raman spectrum, AFM, UV-Visible Spectrophotometer and I-V Measurement System respectively. The X-ray diffraction (XRD) pattern confirmed the formation of the CuZnO composition when compared with standard JCPDS card (JCPDF # 75-0576 & # 36-1451). The Raman analysis shows a major peak at 458 cm-1 with E2 (High) vibrational mode. AFM images revealed uniform deposition over an entire glass substrate with 66.2 nm average roughness of the film. From the optical absorption spectrum, clear band edge around ∼407 nm was observed which results in a wide energy band gap of ∼3.04 eV. The electrical properties were measured at room temperature in the voltage range ±5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ∼99.9 % for 260 W.We have successfully deposited CuZnO thin film on a glass substrate by facile chemical bath deposition method at 85 °C for 1 hr. Structural, topographical, Optical and Electrical properties of the prepared Thin Films were investigated by XRD, Raman spectrum, AFM, UV-Visible Spectrophotometer and I-V Measurement System respectively. The X-ray diffraction (XRD) pattern confirmed the formation of the CuZnO composition when compared with standard JCPDS card (JCPDF # 75-0576 & # 36-1451). The Raman analysis shows a major peak at 458 cm-1 with E2 (High) vibrational mode. AFM images revealed uniform deposition over an entire glass substrate with 66.2 nm average roughness of the film. From the optical absorption spectrum, clear band edge around ∼407 nm was observed which results in a wide energy band gap of ∼3.04 eV. The electrical properties were measured at room temperature in the voltage range ±5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ∼99.9 % fo...

Investigation of structural, morphological and opto-electronic properties of CdS quantum dot thin film

We have successfully deposited CdS quantum dot thin film on the glass substrate by simple and economic chemical bath deposition method at ∼50 ˚C. The X-ray diffraction study confirms the formation of CdS when compared with standard JCPDS data with average crystallite size ∼3 nm. The morphology of the film was studied by FE-SEM, which suggests the homogeneous and uniform deposition of the CdS material over the entire glass substrate with a porous structure. From UV absorption spectra we observed that the sample exhibited a band edge near ∼400 nm with a slight deviation with the presence of excitonic peak for the sample. The presence of excitonic peak may be attributed to the formation of quantum dots. The calculated band gap energy of CdS quantum dot thin film was found to be ∼3.136 eV. The thin film further characterized to study electrical parameters and the sample show a drastic increase in current after light illumination.

Synthesis and characterization of structural, morphological and photosensor properties of Cu0.1Zn0.9S thin film prepared by a facile chemical method

The Cu0.1Zn0.9S thin film was grown by facile chemical bath deposition (CBD) method on glass substrates at 60°C. The structural, morphological, photosensor properties of the as-grown thin film has been investigated. The structural and phase confirmation of the as-grown thin film was carried out by X-ray diffraction (XRD) technique and Raman spectroscopy. The FE-SEM images showed that the thin films are well covered with material on an entire glass substrate. From the optical absorption spectrum, the direct band gap energy for the Cu0.1Zn0.9S thin film was found to be ∼3.16 eV at room temperature. The electrical properties were measured at room temperature in the voltage range ±2.5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ∼72 % for 260 W.The Cu0.1Zn0.9S thin film was grown by facile chemical bath deposition (CBD) method on glass substrates at 60°C. The structural, morphological, photosensor properties of the as-grown thin film has been investigated. The structural and phase confirmation of the as-grown thin film was carried out by X-ray diffraction (XRD) technique and Raman spectroscopy. The FE-SEM images showed that the thin films are well covered with material on an entire glass substrate. From the optical absorption spectrum, the direct band gap energy for the Cu0.1Zn0.9S thin film was found to be ∼3.16 eV at room temperature. The electrical properties were measured at room temperature in the voltage range ±2.5 V, showed a drastic enhancement in current under light illumination with the highest photosensitivity of ∼72 % for 260 W.

Structural and optoelectronic studies on Ag-CdS quantum dots

In the present study, we have successfully deposited CdS quantum dot thin films and Ag doped CdS on a glass slide by simple and economical chemical bath deposition at room temperature. The X-ray diffraction method analysis reveals that CdS thin films exhibit hexagonal structure when compared with standard JCPDS data. The estimated average crystallite size of the quantum dots and resulted in the least crystallite size of ∼9 nm. a comparison between the optical and electrical properties of the films before and after doping Ag was made through measuring and analyzing the curves for UV and I-V. From UV absorption spectra we observed that the samples exhibited a band edge near ∼400 nm with a slight deviation with the presence of excitonic peak for both CdS and Ag doped CdS. The presence of excitonic peak may be referred to the formation of quantum dots. The calculated band gap energy of thin films was found to be 3.45 eV and 3.15 eV for both CdS and Ag doped CdS thin films respectively, where the optical absorption spectra of Ag doped CdS nanoparticles also exhibit shift with respect to that of CdS quantum dots thin films. The photosensitive of CdS thin films show an increase in photocurrent when Ag doped CdS.In the present study, we have successfully deposited CdS quantum dot thin films and Ag doped CdS on a glass slide by simple and economical chemical bath deposition at room temperature. The X-ray diffraction method analysis reveals that CdS thin films exhibit hexagonal structure when compared with standard JCPDS data. The estimated average crystallite size of the quantum dots and resulted in the least crystallite size of ∼9 nm. a comparison between the optical and electrical properties of the films before and after doping Ag was made through measuring and analyzing the curves for UV and I-V. From UV absorption spectra we observed that the samples exhibited a band edge near ∼400 nm with a slight deviation with the presence of excitonic peak for both CdS and Ag doped CdS. The presence of excitonic peak may be referred to the formation of quantum dots. The calculated band gap energy of thin films was found to be 3.45 eV and 3.15 eV for both CdS and Ag doped CdS thin films respectively, where the optical absor...

Growth of nanocrystalline Zn0.75Mg0.25S thin film by solution growth technique and their characterization as a window layer for solar cell

ABSTRACT Zn0.75Mg0.25S thin film was grown by solution growth technique. The as-grown thin film was examined to study its structural and optoelectronic properties. The formation of pure ZnMgS/O phase with wurtzite structure was confirmed by XRD. Optical bandgap (∼3.69 eV) was estimated through Taucs plot obtained from UV-Vis spectroscopic data analysis. The existence of ZnMgS/O phonons was confirmed from the peaks obtained in Raman spectra. The PL spectrum shows band edge near UV emission. Decrease in resistance after light illumination was observed in I-V characteristics results in 98% photosensitivity.

Room temperature gas sensing properties of polypyrrole-gold nanocomposite thin film

ABSTRACT Thin films of polypyrrole and polypyrrole-gold nanocomposite were deposited on the still substrate by an electrochemical deposition technique. Electrical resistivity of both thin films were investigated which shows the ohmic nature with a decrease in resistivity in the polypyrrole-gold nanocomposite. Surface morphology of both samples represents the nanofiber like morphology randomly oriented on the still substrate whereas the presence of gold nanoparticles in polymer matrix was confirmed by EDAX spectrum. The room temperature gas sensing was studied in presence of 50 ppm of ammonia gas and enhancement in sensitivity was observed in the case of polypyrrole-gold nanocomposite.

Room temperature ammonia sensing properties of nanostructured polyaniline salt and polyaniline base thin films

ABSTRACT Polyaniline salt and polyaniline base thin films were grown by chemical polymerization technique. Films of salt and base were characterized by optical absorbance spectroscopy which reveals the formation of polyaniline. The resistivity of both samples was investigated by I-V source meter which shows ohmic nature. Surface morphology of both samples was investigated by Field Emission Scanning Electron Microscopy, which represents the nanostructured and granular morphology. Ammonia sensing properties of both samples were by I-V source meter in presence of 25 ppm of ammonia. Observed values of sensitivity (S) is 82% and 56% for polyaniline salt and polyaniline base.

Effect of quantum confinement on photosensitivity in ZnS thin film grown by facile chemical bath deposition

ABSTRACT Nanostructured ZnS thin film has been successfully synthesized by CBD method. Face-centered cubic structure with average crystallite size of 3.4 nm suggests the formation of quantum dots, confirmed by XRD. The ZnS thin film represents higher absorption in UV region with an energy band gap of 3.77 eV, slightly shifted at higher scale due to quantum size effect. The I-V curve in dark and under light illumination (200 watts) shows a decrease in resistivity from 1.16 MΩ-cm to 0.77 MΩ-cm resulted in 34% photosensitivity. The calculated photosensor efficiency and photoresponsivity were 1.51% and 11.8 nA/W2 respectively.