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Dive into the research topics where Avinoam Kolodny is active.

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Featured researches published by Avinoam Kolodny.


system-level interconnect prediction | 2004

Interconnect-power dissipation in a microprocessor

Nir Magen; Avinoam Kolodny; Uri C. Weiser; Nachum Shamir

Interconnect power is dynamic power dissipation due to switching of interconnection capacitances. This paper describes the characterization of interconnect power in a state-of-the-art high-performance microprocessor designed for power efficiency. The analysis showed that interconnect power is over 50% of the dynamic power. Over 90% of the interconnect power is consumed by only 10% of the interconnections. Relations of interconnect power to wire length distribution and hierarchy level of nets were examined. In light of the results, a routers algorithms were modified, to use larger wire spacing and minimal length routing for the high power consuming interconnects. The power-aware router algorithm was tested on synthesized blocks, demonstrating average saving of 14% in the dynamic power consumption without timing degradation or area increase. The results demonstrate the obtainable benefits of tuning physical design algorithms to save power.


IEEE Transactions on Circuits and Systems | 2013

TEAM: ThrEshold Adaptive Memristor Model

Shahar Kvatinsky; Eby G. Friedman; Avinoam Kolodny; Uri C. Weiser

Memristive devices are novel devices, which can be used in applications ranging from memory and logic to neuromorphic systems. A memristive device offers several advantages: nonvolatility, good scalability, effectively no leakage current, and compatibility with CMOS technology, both electrically and in terms of manufacturing. Several models for memristive devices have been developed and are discussed in this paper. Digital applications such as memory and logic require a model that is highly nonlinear, simple for calculations, and sufficiently accurate. In this paper, a new memristive device model is presented-TEAM, ThrEshold Adaptive Memristor model. This model is flexible and can be fit to any practical memristive device. Previously published models are compared in this paper to the proposed TEAM model. It is shown that the proposed model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models.


IEEE Transactions on Very Large Scale Integration Systems | 2014

Memristor-Based Material Implication (IMPLY) Logic: Design Principles and Methodologies

Shahar Kvatinsky; Guy Satat; Nimrod Wald; Eby G. Friedman; Avinoam Kolodny; Uri C. Weiser

Memristors are novel devices, useful as memory at all hierarchies. These devices can also behave as logic circuits. In this paper, the IMPLY logic gate, a memristor-based logic circuit, is described. In this memristive logic family, each memristor is used as an input, output, computational logic element, and latch in different stages of the computing process. The logical state is determined by the resistance of the memristor. This logic family can be integrated within a memristor-based crossbar, commonly used for memory. In this paper, a methodology for designing this logic family is proposed. The design methodology is based on a general design flow, suitable for all deterministic memristive logic families, and includes some additional design constraints to support the IMPLY logic family. An IMPLY 8-bit full adder based on this design methodology is presented as a case study.


IEEE Transactions on Circuits and Systems Ii-express Briefs | 2014

MAGIC—Memristor-Aided Logic

Shahar Kvatinsky; Dmitry Belousov; Slavik Liman; Guy Satat; Nimrod Wald; Eby G. Friedman; Avinoam Kolodny; Uri C. Weiser

Memristors are passive components with a varying resistance that depends on the previous voltage applied across the device. While memristors are naturally used as memory, memristors can also be used for other applications, including logic circuits. In this brief, a memristor-only logic family, i.e., memristor-aided logic (MAGIC), is presented. In each MAGIC logic gate, memristors serve as an input with previously stored data, and an additional memristor serves as an output. The topology of a MAGIC nor gate is similar to the structure of a common memristor-based crossbar memory array. A MAGIC nor gate can therefore be placed within memory, providing opportunities for novel non-von Neumann computer architectures. Other MAGIC gates also exist (e.g., and, or, not, and nand) and are described in this brief.


2012 13th International Workshop on Cellular Nanoscale Networks and their Applications | 2012

MRL — Memristor Ratioed Logic

Shahar Kvatinsky; Nimrod Wald; Guy Satat; Avinoam Kolodny; Uri C. Weiser; Eby G. Friedman

Memristive devices are novel structures, developed primarily as memory. Another interesting application for memristive devices is logic circuits. In this paper, MRL (Memristor Ratioed Logic) - a hybrid CMOS-memristive logic family - is described. In this logic family, OR and AND logic gates are based on memristive devices, and CMOS inverters are added to provide a complete logic structure and signal restoration. Unlike previously published memristive-based logic families, the MRL family is compatible with standard CMOS logic. A case study of an eight-bit full adder is presented and related design considerations are discussed.


IEEE Transactions on Circuits and Systems Ii-express Briefs | 2015

VTEAM: A General Model for Voltage-Controlled Memristors

Shahar Kvatinsky; Misbah Ramadan; Eby G. Friedman; Avinoam Kolodny

Memristors are novel electrical devices used for a variety of applications, including memory, logic circuits, and neuromorphic systems. Memristive technologies are attractive due to their nonvolatility, scalability, and compatibility with CMOS. Numerous physical experiments have shown the existence of a threshold voltage in some physical memristors. Additionally, as shown in this brief, some applications require voltage-controlled memristors to operate properly. In this brief, a Voltage ThrEshold Adaptive Memristor (VTEAM) model is proposed to describe the behavior of voltage-controlled memristors. The VTEAM model extends the previously proposed ThrEshold Adaptive Memristor (TEAM) model, which describes current-controlled memristors. The VTEAM model has similar advantages as the TEAM model, i.e., it is simple, general, and flexible, and can characterize different voltage-controlled memristors. The VTEAM model is accurate (below 1.5% in terms of the relative root-mean-square error) and computationally efficient as compared with existing memristor models and experimental results describing different memristive technologies.


IEEE Computer Architecture Letters | 2009

Many-Core vs. Many-Thread Machines: Stay Away From the Valley

Zvika Guz; Evgeny Bolotin; Idit Keidar; Avinoam Kolodny; Avi Mendelson; Uri C. Weiser

We study the tradeoffs between many-core machines like Intelpsilas Larrabee and many-thread machines like Nvidia and AMD GPGPUs. We define a unified model describing a superposition of the two architectures, and use it to identify operation zones for which each machine is more suitable. Moreover, we identify an intermediate zone in which both machines deliver inferior performance. We study the shape of this ldquoperformance valleyrdquo and provide insights on how it can be avoided.


international conference on embedded computer systems architectures modeling and simulation | 2012

HNOCS: Modular open-source simulator for Heterogeneous NoCs

Yaniv Ben-Itzhak; Eitan Zahavi; Israel Cidon; Avinoam Kolodny

We present HNOCS (Heterogeneous Network-on-Chip Simulator), an open-source NoC simulator based on OMNeT++. To the best of our knowledge, HNOCS is the first simulator to support modeling of heterogeneous NoCs with variable link capacities and number of VCs per unidirectional port. The HNOCS simulation platform provides an open-source, modular, scalable, extendible and fully parameterizable framework for modeling NoCs. It includes three types of NoC routers: synchronous, synchronous virtual output queue (VoQ) and asynchronous. HNOCS provides a rich set of statistical measurements at the flit and packet levels: end-to-end latencies, throughput, VC acquisition latencies, transfer latencies, etc. We describe the architecture, structure, available models and the features that make HNOCS suitable for advanced NoC exploration. We also evaluate several case studies which cannot be evaluated with any other exiting NoC simulator.


international conference on computer design | 2011

Memristor-based IMPLY logic design procedure

Shahar Kvatinsky; Avinoam Kolodny; Uri C. Weiser; Eby G. Friedman

Memristors can be used as logic gates. No design methodology exists, however, for memristor-based combinatorial logic. In this paper, the design and behavior of a memristive-based logic gate - an IMPLY gate - are presented and design issues such as the tradeoff between speed (fast write times) and correct logic behavior are described, as part of an overall design methodology. A memristor model is described for determining the write time and state drift. It is shown that the widely used memristor model - a linear ion drift memristor - is impractical for characterizing an IMPLY logic gate, and a different memristor model is necessary such as a memristor with a current threshold.


Integration | 2009

QNoC asynchronous router

Rostislav (Reuven) Dobkin; Ran Ginosar; Avinoam Kolodny

An asynchronous router for quality-of-service Networks on Chip (QNoC) is presented. It combines multiple service levels (SL) with multiple equal-priority virtual channels (VC) within each SL. VCs are assigned dynamically per packet in each router. The router employs fast arbitration schemes to minimize latency. Analytical expressions for a generic NoC router performance, area and power are derived, showing linear dependence on the number of buffers and flit width. The analytical results agree with QNoC router simulation results. The QNoC router architecture and specific asynchronous circuits are presented. When simulated on a 0.18@mm process, the router throughput ranges from 1.8 to 20Gbps for flits 8-128 bits wide.

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Israel Cidon

Technion – Israel Institute of Technology

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Ran Ginosar

Technion – Israel Institute of Technology

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Uri C. Weiser

Technion – Israel Institute of Technology

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Shahar Kvatinsky

Technion – Israel Institute of Technology

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Arkadiy Morgenshtein

Technion – Israel Institute of Technology

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Konstantin Moiseev

Technion – Israel Institute of Technology

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Konstantin Moiseev

Technion – Israel Institute of Technology

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Isask'har Walter

Technion – Israel Institute of Technology

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