Axel F. Palmstrom

Perovskite-perovskite tandem photovoltaics with optimized band gaps

Tandem perovskite cells The ready processability of organic-inorganic perovskite materials for solar cells should enable the fabrication of tandem solar cells, in which the top layer is tuned to absorb shorter wavelengths and the lower layer to absorb the remaining longer-wavelength light. The difficulty in making an all-perovskite cell is finding a material that absorbs the red end of the spectrum. Eperon et al. developed an infrared-absorbing mixed tin-lead material that can deliver 14.8% efficiency on its own and 20.3% efficiency in a four-terminal tandem cell. Science, this issue p. 861 A mixed tin-lead perovskite material with a narrow band gap enables efficient tandem solar cells. We demonstrate four- and two-terminal perovskite-perovskite tandem solar cells with ideally matched band gaps. We develop an infrared-absorbing 1.2–electron volt band-gap perovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can deliver 14.8% efficiency. By combining this material with a wider–band gap FA0.83Cs0.17Pb(I0.5Br0.5)3 material, we achieve monolithic two-terminal tandem efficiencies of 17.0% with >1.65-volt open-circuit voltage. We also make mechanically stacked four-terminal tandem cells and obtain 20.3% efficiency. Notably, we find that our infrared-absorbing perovskite cells exhibit excellent thermal and atmospheric stability, not previously achieved for Sn-based perovskites. This device architecture and materials set will enable “all-perovskite” thin-film solar cells to reach the highest efficiencies in the long term at the lowest costs.

Tailoring Mixed-Halide, Wide-Gap Perovskites via Multistep Conversion Process

Wide-band-gap mixed-halide CH3NH3PbI3-XBrX-based solar cells have been prepared by means of a sequential spin-coating process. The spin-rate for PbI2 as well as its repetitive deposition are important in determining the cross-sectional shape and surface morphology of perovskite, and, consequently, J-V performance. A perovskite solar cell converted from PbI2 with a dense bottom layer and porous top layer achieved higher device performance than those of analogue cells with a dense PbI2 top layer. This work demonstrates a facile way to control PbI2 film configuration and morphology simply by modification of spin-coating parameters without any additional chemical or thermal post-treatment.