Axel Stockhausen

Transient Analysis of THz-QCL Pulses Using NbN and YBCO Superconducting Detectors

We report the time-domain analysis of fast pulses emitted by a quantum cascade laser (QCL) operating at ~ 3.1 THz using superconducting THz detectors made from either NbN or YBa2Cu3O7-δ (YBCO) thin films. The ultrafast response from these detectors allows resolution of emission features occurring on a nanosecond time-scale, which is not possible with commercially available Ge or InSb bolometers owing to their much larger time constants. We demonstrate that the time-dependent emission can be strongly affected by relatively small variations in the driving pulse. The QCL output power-current relationship was determined, based on correlation of the time-dependent emission of radiation with current flow in the QCL, under different QCL bias conditions. We show that this relationship differs from that obtained using bolometric detectors that respond only to the integrated pulse energy. The linearity of the detectors, and their agreement with measurements using a Ge bolometer, was also established by studying the QCL emission as a function of bias voltage and excitation pulse length. This measurement scheme could be readily applied to the study of ultrafast modulation and mode-locking of THz-QCLs.

Adjustment of self-heating in long superconducting thin film NbN microbridges

The self-heating in long superconducting microbridges made from thin NbN films deposited on top of high silicon mesa structures was studied by analyzing the hysteresis current density j(H). We observed a more than twofold decrease of j(H) with increase in the ratio of the height of the Si mesa, h, to the width of the microbridge, W, from 0 to 24. We describe our experimental results using one-dimensional thermal balance equations taking into account disordered matter in our thin NbN films and limitations imposed on the phonon mean free path by the width of the Si mesa. In the framework of this model we obtain a good agreement between theory and experiment over a wide temperature range from 4.2 K up to the critical temperature T-C for all h/W ratios.

Technology and Performance of THz Hot-Electron Bolometer Mixers

Hot-electron bolometer (HEB) mixers are a complex multi-layer thin film structure containing an ultra-thin superconducting film of NbN as a detecting element and a thick normal metal layer as an antenna structure. We have optimized the fabrication process starting with ultra-thin NbN films, Au films for antenna structures and their patterning using e-beam lithography and lift-off. The coupling between normal conducting antenna and NbN detector has been improved by introducing an intermediate NbN film to reduce proximity suppression of superconductivity in the detecting element. A critical temperature of about 9.5 K is reached for NbN films with a thickness between 5 nm and 6 nm. A twofold increase of the film thickness increases the critical temperature to 12 K. We have shown that a 20 nm thick buffer layer of NbN under a much thicker Au layer is sufficient to ensure a critical temperature of the bi-layer of 9 K. This value is close to the critical temperature of 5.5 nm thick HEB devices. The noise temperature of HEB mixer made using improved technology is about 800 K and was measured in a liquid cryogen free system with a quantum cascade laser as 2.5 THz local oscillator.

Time-resolved measurement of pulse-to-pulse heating effects in a terahertz quantum cascade laser using an NbN superconducting detector

Joule heating causes significant degradation in the power emitted from terahertz-frequency quantum-cascade lasers (THz QCLs). However, to date, it has not been possible to characterize the thermal equilibration time of these devices, since THz power degradation over sub-millisecond time-scales cannot be resolved using conventional bolometric or pyroelectric detectors. In this letter, we use a superconducting antenna-coupled niobium nitride detector to measure the emission from a THz QCL with a nanosecond-scale time-resolution. The emitted THz power is shown to decay more rapidly at higher heat-sink temperatures, and in steady-state the power reduces as the repetition rate of the driving pulses increases. The pulse-to-pulse variation in active-region temperature is inferred by comparing the THz signals with those obtained from low duty-cycle measurements. A thermal resistance of 8.2 ± 0.6 K/W is determined, which is in good agreement with earlier measurements, and we calculate a 370 ± 90-μs bulk heat-stora...

Dielectric RF properties of CVD diamond disks from sub-mm wave to THz frequencies

ITER torus windows with CVD diamond disks for high power heating applications (170 GHz, 1–2 MW) are being investigated by different low- and high power measurement setups in the frequency range of 90 to 170 GHz [1,2]. To understand the loss mechanisms in diamond material the determination of the frequency dependence of dielectric constant (ε = ε′ −jε″) and loss tangent (tan δ) at higher frequencies up to several THz is essential. It is well known from the experience with other window materials for high power fusion applications (ECRH) like silicon or sapphire electrons and phonons are responsible for microwave losses. In diamond the sp2-carbon content and surface roughness determines surface losses. Additionally, the electronic surface states for different chemical finishing of the diamond disks can be studied in the THz region.