Aydin Babakhani

A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Receiver and Antennas

In this paper, we present the receiver and the on-chip antenna sections of a fully integrated 77-GHz four-element phased-array transceiver with on-chip antennas in silicon. The receiver section of the chip includes the complete down-conversion path comprising low-noise amplifier (LNA), frequency synthesizer, phase rotators, combining amplifiers, and on-chip dipole antennas. The signal combining is performed using a novel distributed active combining amplifier at an IF of 26 GHz. In the LO path, the output of the 52-GHz VCO is routed to different elements and can be phase shifted locally by the phase rotators. A silicon lens on the backside is used to reduce the loss due to the surface-wave power of the silicon substrate. Our measurements show a single-element LNA gain of 23 dB and a noise figure of 6.0dB. Each of the four receive paths has a gain of 37 dB and a noise figure of 8.0 dB. Each on-chip antenna has a gain of +2 dBi

A 77-GHz Phased-Array Transceiver With On-Chip Antennas in Silicon: Transmitter and Local LO-Path Phase Shifting

Integration of mm-wave multiple-antenna systems on silicon-based processes enables complex, low-cost systems for high-frequency communication and sensing applications. In this paper, the transmitter and LO-path phase-shifting sections of the first fully integrated 77-GHz phased-array transceiver are presented. The SiGe transceiver utilizes a local LO-path phase-shifting architecture to achieve beam steering and includes four transmit and receive elements, along with the LO frequency generation and distribution circuitry. The local LO-path phase-shifting scheme enables a robust distribution network that scales well with increasing frequency and/or number of elements while providing high-resolution phase shifts. Each element of the heterodyne transmitter generates +12.5 dBm of output power at 77 GHz with a bandwidth of 2.5 GHz leading to a 4-element effective isotropic radiated power (EIRP) of 24.5 dBm. Each on-chip PA has a maximum saturated power of +17.5 dBm at 77 GHz. The phased-array performance is measured using an internal test option and achieves 12-dB peak-to-null ratio with two transmit and receive elements active

Transmitter Architectures Based on Near-Field Direct Antenna Modulation

A near-field direct antenna modulation (NFDAM) technique is introduced, where the radiated far-field signal is modulated by time-varying changes in the antenna near-field electromagnetic (EM) boundary conditions. This enables the transmitter to send data in a direction-dependent fashion producing a secure communication link. Near-field direct antenna modulation (NFDAM) can be performed by using either switches or varactors. Two fully-integrated proof-of-concept NFDAM transmitters operating at 60 GHz using switches and varactors are demonstrated in silicon proving the feasibility of this approach.

Near-field direct antenna modulation

NFDAM systems provide a unique solution for transmitting highly secured direction-dependent data and hence preventing eavesdroppers from properly demodulating the signal. A 60-GHz proof-of-concept chip was designed and measured.

A Linearized, Low-Phase-Noise VCO-Based 25-GHz PLL With Autonomic Biasing

This paper describes a new approach to low-phasenoise LC VCO design based on transconductance linearization of the active devices. A prototype 25 GHz VCO based on this linearization approach is integrated in a dual-path PLL and achieves superior performance compared to the state of the art. The design is implemented in 32 nm SOI CMOS technology and achieves a phase noise of - 130 dBc/Hz at a 10 MHz offset from a 22 GHz carrier. Additionally, the paper introduces a new layout approach for switched capacitor arrays that enables a wide tuning range of 23%. More than 1500 measurements of the PLL across PVT variations were taken, further validating the proposed design. Phase noise variation across 55 dies for four different frequencies is σ < 0.6 dB. Also, phase noise variation across supply voltages of 0.7-1.5 V is 2 dB and across 60 °C temperature variation is 3 dB. At the 25 GHz center frequency, the VCO FOMT is 188 dBc/Hz. Additionally, a digitally assisted autonomic biasing technique is implemented in the PLL to provide a phase noise and power optimized VCO bias across frequency and process. Measurement results indicate the efficacy of the autonomic biasing scheme.

A 77GHz Phased-Array Transmitter with Local LO-Path Phase-Shifting in Silicon

A fully integrated 77GHz 4-element phased-array transmitter in 0.12mum SiGe BiCMOS based on a continuous local phase shifting approach is presented. Each element generates +12.5dBm output power at 77GHz and has 34dB gain from baseband to RF with a bandwidth of 2.5GHz. The chip demonstrates successful beam-steering at 77GHz

A Scalable 6-to-18 GHz Concurrent Dual-Band Quad-Beam Phased-Array Receiver in CMOS

This paper reports a 6-to-18 GHz integrated phased- array receiver implemented in 130-nm CMOS. The receiver is easily scalable to build a very large-scale phased-array system. It concurrently forms four independent beams at two different frequencies from 6 to 18 GHz. The nominal conversion gain of the receiver ranges from 16 to 24 dB over the entire band while the worst-case cross-band and cross-polarization rejections are achieved 48 dB and 63 dB, respectively. Phase shifting is performed in the LO path by a digital phase rotator with the worst-case RMS phase error and amplitude variation of 0.5deg and 0.4 dB, respectively, over the entire band. A four-element phased-array receiver system is implemented based on four receiver chips. The measured array patterns agree well with the theoretical ones with a peak-to-null ratio of over 21.5 dB.

A Scalable 6-to-18GHz Concurrent Dual-Band Quad-Beam Phased-Array Receiver in CMOS

This paper reports a 6-to-18 GHz integrated phased- array receiver implemented in 130-nm CMOS. The receiver is easily scalable to build a very large-scale phased-array system. It concurrently forms four independent beams at two different frequencies from 6 to 18 GHz. The nominal conversion gain of the receiver ranges from 16 to 24 dB over the entire band while the worst-case cross-band and cross-polarization rejections are achieved 48 dB and 63 dB, respectively. Phase shifting is performed in the LO path by a digital phase rotator with the worst-case RMS phase error and amplitude variation of 0.5deg and 0.4 dB, respectively, over the entire band. A four-element phased-array receiver system is implemented based on four receiver chips. The measured array patterns agree well with the theoretical ones with a peak-to-null ratio of over 21.5 dB.

A 77GHz 4-Element Phased Array Receiver with On-Chip Dipole Antennas in Silicon

On-chip antennas are used in a fully integrated phased-array receiver at 77GHz. The complete down-conversion, power-combining, and phase-generation functions are integrated in silicon with no external mm-wave electrical connections. Each of the 4 receiver elements has 41dB of gain with a NF of 8dB with a system BW of 3GHz

A Near-Field Modulation Technique Using Antenna Reflector Switching

This paper presents a near-field reflector switching technique that can generate independently controlled modulated signals for sufficiently different angles of radiation. This technique can be used either to transmit different data in different directions simultaneously, or to generate the correct signal constellation only in the desired direction and scrambled ones for other angles, creating a secure communication link. This approach is also conducive to power-efficient switching PAs, even for wideband non-constant envelope modulation schemes, enabling fast and power-efficient transmitter architectures.